Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters

Detalhes bibliográficos
Autor(a) principal: De Lima, Guilherme R. [UNESP]
Data de Publicação: 2018
Outros Autores: Braga, João Paulo [UNESP], Gozzi, Giovani [UNESP], Santos, Lucas Fugikawa [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1557/adv.2018.35
http://hdl.handle.net/11449/179690
Resumo: Metal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.
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spelling Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameterselectrical propertiesspray pyrolysisthin filmMetal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Departamento de Física Universidade Estadual Paulista - UNESP, Rua Cristovao Colombo 2265Departamento de Física Universidade Estadual Paulista - UNESP, Avenida 24 A, 1515Departamento de Física Universidade Estadual Paulista - UNESP, Rua Cristovao Colombo 2265Departamento de Física Universidade Estadual Paulista - UNESP, Avenida 24 A, 1515FAPESP: 2008/57706-4FAPESP: 2013/24461-7FAPESP: 2017/22018-0Universidade Estadual Paulista (Unesp)De Lima, Guilherme R. [UNESP]Braga, João Paulo [UNESP]Gozzi, Giovani [UNESP]Santos, Lucas Fugikawa [UNESP]2018-12-11T17:36:22Z2018-12-11T17:36:22Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject247-253http://dx.doi.org/10.1557/adv.2018.35MRS Advances, v. 3, n. 5, p. 247-253, 2018.2059-8521http://hdl.handle.net/11449/17969010.1557/adv.2018.352-s2.0-850442526250101178832675166Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMRS Advancesinfo:eu-repo/semantics/openAccess2021-10-23T16:51:41Zoai:repositorio.unesp.br:11449/179690Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:22:28.791668Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
title Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
spellingShingle Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
De Lima, Guilherme R. [UNESP]
electrical properties
spray pyrolysis
thin film
title_short Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
title_full Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
title_fullStr Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
title_full_unstemmed Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
title_sort Optimization of the Electrical Performance of Metal Oxide Thin-film Transistors by varying Spray Deposition Parameters
author De Lima, Guilherme R. [UNESP]
author_facet De Lima, Guilherme R. [UNESP]
Braga, João Paulo [UNESP]
Gozzi, Giovani [UNESP]
Santos, Lucas Fugikawa [UNESP]
author_role author
author2 Braga, João Paulo [UNESP]
Gozzi, Giovani [UNESP]
Santos, Lucas Fugikawa [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv De Lima, Guilherme R. [UNESP]
Braga, João Paulo [UNESP]
Gozzi, Giovani [UNESP]
Santos, Lucas Fugikawa [UNESP]
dc.subject.por.fl_str_mv electrical properties
spray pyrolysis
thin film
topic electrical properties
spray pyrolysis
thin film
description Metal oxides like zinc oxide (ZnO) are promising materials for the active layer of thin-film transistors (TFTs) used in the drive circuit of next-generation large-area active matrix displays due to their high electronic mobility, high transmittance in the optical visible range and processability. Traditional deposition techniques employ RF sputtering or pulsed-laser deposition (PLD), which are relatively sophisticated techniques. The deposition of very thin (less than 50 nm thick) layers of ZnO using soluble organic precursors have been extensively investigated recently as an alternative to traditional deposition methods. Solution-based deposition processes include simple and affordable techniques like dip-coating, spin-coating, spray-pyrolysis and ink-jet printing. Spray-pyrolysis is particularly interesting due to the high film uniformity, low cost and high device performance. We carried out several experiments analyzing the performance of ZnO based devices using zinc acetate as organic precursor to confirm that spray pyrolysis deposition is a suitable technique for production of high-performance and reproducible TFTs. Moreover, we observed that device performance can significantly vary with little modifications on the deposition parameters, even for the same active layer composition and pyrolysis temperature. Electrical parameters, as the electrical mobility and the on/off ratio, varied several orders of magnitude, whereas the threshold voltage varied up to 20 V for the tested devices. Deposition parameters as the nozzle height during the deposition, nozzle air pressure and deposition time were varied until we obtained devices with optimum electrical performance. Optimized devices presented mobilities in the order of 1 cm2.V-1.s-1, on/off ratio of about 106 and relatively low operation voltages. A statistical analysis of a great number of devices manufactured using the same deposition parameters was also carried out to assure the reproducibility of the deposition technique.
publishDate 2018
dc.date.none.fl_str_mv 2018-12-11T17:36:22Z
2018-12-11T17:36:22Z
2018-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1557/adv.2018.35
MRS Advances, v. 3, n. 5, p. 247-253, 2018.
2059-8521
http://hdl.handle.net/11449/179690
10.1557/adv.2018.35
2-s2.0-85044252625
0101178832675166
url http://dx.doi.org/10.1557/adv.2018.35
http://hdl.handle.net/11449/179690
identifier_str_mv MRS Advances, v. 3, n. 5, p. 247-253, 2018.
2059-8521
10.1557/adv.2018.35
2-s2.0-85044252625
0101178832675166
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv MRS Advances
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 247-253
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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