Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2017 |
| Outros Autores: | , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UNESP |
| Texto Completo: | http://dx.doi.org/10.1016/j.orgel.2017.08.011 http://hdl.handle.net/11449/179105 |
Resumo: | We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics. |
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Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrodeMayer rod-coatingSilver nanowiresTransparent conductive electrodesVertical FETsVertical organic transistorWe report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)São Paulo State University (Unesp) School of Sciences Department of PhysicsSão Paulo State University (Unesp) School of Sciences Department of PhysicsFAPESP: 2011/21830-6FAPESP: 2013/07296-2FAPESP: 2013/09963-6Universidade Estadual Paulista (Unesp)Albano, Luiz G.S. [UNESP]Boratto, Miguel H. [UNESP]Nunes-Neto, Oswaldo [UNESP]Graeff, Carlos F.O. [UNESP]2018-12-11T17:33:44Z2018-12-11T17:33:44Z2017-11-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article311-316application/pdfhttp://dx.doi.org/10.1016/j.orgel.2017.08.011Organic Electronics: physics, materials, applications, v. 50, p. 311-316.1566-1199http://hdl.handle.net/11449/17910510.1016/j.orgel.2017.08.0112-s2.0-850275485892-s2.0-85027548589.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengOrganic Electronics: physics, materials, applications1,085info:eu-repo/semantics/openAccess2024-04-25T17:40:20Zoai:repositorio.unesp.br:11449/179105Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:20:52.971988Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
| dc.title.none.fl_str_mv |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| title |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| spellingShingle |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode Albano, Luiz G.S. [UNESP] Mayer rod-coating Silver nanowires Transparent conductive electrodes Vertical FETs Vertical organic transistor |
| title_short |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| title_full |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| title_fullStr |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| title_full_unstemmed |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| title_sort |
Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode |
| author |
Albano, Luiz G.S. [UNESP] |
| author_facet |
Albano, Luiz G.S. [UNESP] Boratto, Miguel H. [UNESP] Nunes-Neto, Oswaldo [UNESP] Graeff, Carlos F.O. [UNESP] |
| author_role |
author |
| author2 |
Boratto, Miguel H. [UNESP] Nunes-Neto, Oswaldo [UNESP] Graeff, Carlos F.O. [UNESP] |
| author2_role |
author author author |
| dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
| dc.contributor.author.fl_str_mv |
Albano, Luiz G.S. [UNESP] Boratto, Miguel H. [UNESP] Nunes-Neto, Oswaldo [UNESP] Graeff, Carlos F.O. [UNESP] |
| dc.subject.por.fl_str_mv |
Mayer rod-coating Silver nanowires Transparent conductive electrodes Vertical FETs Vertical organic transistor |
| topic |
Mayer rod-coating Silver nanowires Transparent conductive electrodes Vertical FETs Vertical organic transistor |
| description |
We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of ∼30 Ω/sq and surface roughness of 70 ± 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm2 and on/off ratio of 5 × 103 with supply voltages up to 2 V. A fast switching performance of sub-1 μs at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics. |
| publishDate |
2017 |
| dc.date.none.fl_str_mv |
2017-11-01 2018-12-11T17:33:44Z 2018-12-11T17:33:44Z |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.orgel.2017.08.011 Organic Electronics: physics, materials, applications, v. 50, p. 311-316. 1566-1199 http://hdl.handle.net/11449/179105 10.1016/j.orgel.2017.08.011 2-s2.0-85027548589 2-s2.0-85027548589.pdf |
| url |
http://dx.doi.org/10.1016/j.orgel.2017.08.011 http://hdl.handle.net/11449/179105 |
| identifier_str_mv |
Organic Electronics: physics, materials, applications, v. 50, p. 311-316. 1566-1199 10.1016/j.orgel.2017.08.011 2-s2.0-85027548589 2-s2.0-85027548589.pdf |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
Organic Electronics: physics, materials, applications 1,085 |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
311-316 application/pdf |
| dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
| instname_str |
Universidade Estadual Paulista (UNESP) |
| instacron_str |
UNESP |
| institution |
UNESP |
| reponame_str |
Repositório Institucional da UNESP |
| collection |
Repositório Institucional da UNESP |
| repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
| repository.mail.fl_str_mv |
|
| _version_ |
1808129418269294592 |