A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/LED.2021.3120928 http://hdl.handle.net/11449/231538 |
Resumo: | Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. |
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Repositório Institucional da UNESP |
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A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contactField-effect transistorSchottky diodeSpray-coatingVertical electrolyte-gated transistorFew works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. (e-mail: leonardo.nogueira@unesp.br)São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil.Universidade Federal do Paraná – UFPR, Physics Department, Curitiba, PR, Brazil.Universidade Tecnológica Federal Do Paraná – UTFPR, Physics Department, Curitiba, PR, Brazil.Universidade Estadual Paulista (UNESP)Universidade Federal do Paraná (UFPR)Nogueira, Gabriel L.Vieira, Douglas H.Morais, Rogerio M.Serbena, Jose P. M.Seidel, Keli F.Alves, Neri2022-04-29T08:46:02Z2022-04-29T08:46:02Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1109/LED.2021.3120928IEEE Electron Device Letters.1558-05630741-3106http://hdl.handle.net/11449/23153810.1109/LED.2021.31209282-s2.0-85117765402Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengIEEE Electron Device Lettersinfo:eu-repo/semantics/openAccess2024-06-18T18:18:07Zoai:repositorio.unesp.br:11449/231538Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:52:09.234603Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
title |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
spellingShingle |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact Nogueira, Gabriel L. Field-effect transistor Schottky diode Spray-coating Vertical electrolyte-gated transistor |
title_short |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
title_full |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
title_fullStr |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
title_full_unstemmed |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
title_sort |
A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact |
author |
Nogueira, Gabriel L. |
author_facet |
Nogueira, Gabriel L. Vieira, Douglas H. Morais, Rogerio M. Serbena, Jose P. M. Seidel, Keli F. Alves, Neri |
author_role |
author |
author2 |
Vieira, Douglas H. Morais, Rogerio M. Serbena, Jose P. M. Seidel, Keli F. Alves, Neri |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Universidade Federal do Paraná (UFPR) |
dc.contributor.author.fl_str_mv |
Nogueira, Gabriel L. Vieira, Douglas H. Morais, Rogerio M. Serbena, Jose P. M. Seidel, Keli F. Alves, Neri |
dc.subject.por.fl_str_mv |
Field-effect transistor Schottky diode Spray-coating Vertical electrolyte-gated transistor |
topic |
Field-effect transistor Schottky diode Spray-coating Vertical electrolyte-gated transistor |
description |
Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 2022-04-29T08:46:02Z 2022-04-29T08:46:02Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/LED.2021.3120928 IEEE Electron Device Letters. 1558-0563 0741-3106 http://hdl.handle.net/11449/231538 10.1109/LED.2021.3120928 2-s2.0-85117765402 |
url |
http://dx.doi.org/10.1109/LED.2021.3120928 http://hdl.handle.net/11449/231538 |
identifier_str_mv |
IEEE Electron Device Letters. 1558-0563 0741-3106 10.1109/LED.2021.3120928 2-s2.0-85117765402 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
IEEE Electron Device Letters |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129132107661312 |