A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact

• Autor(a) principal: Nogueira, Gabriel L.
• Data de Publicação: 2021
• Outros Autores: Vieira, Douglas H., Morais, Rogerio M., Serbena, Jose P. M., Seidel, Keli F., Alves, Neri
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• DOI: 10.1109/LED.2021.3120928
• Texto Completo: http://dx.doi.org/10.1109/LED.2021.3120928; http://hdl.handle.net/11449/231538
• topic: Field-effect transistor; Schottky diode; Spray-coating; Vertical electrolyte-gated transistor

Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.