A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact

Detalhes bibliográficos
Autor(a) principal: Nogueira, Gabriel L.
Data de Publicação: 2021
Outros Autores: Vieira, Douglas H., Morais, Rogerio M., Serbena, Jose P. M., Seidel, Keli F., Alves, Neri
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/LED.2021.3120928
http://hdl.handle.net/11449/231538
Resumo: Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.
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spelling A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contactField-effect transistorSchottky diodeSpray-coatingVertical electrolyte-gated transistorFew works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil. (e-mail: leonardo.nogueira@unesp.br)São Paulo State University – UNESP, Faculty of Science and Technology (FCT), Physics Department, Presidente Prudente, SP, Brazil.Universidade Federal do Paraná – UFPR, Physics Department, Curitiba, PR, Brazil.Universidade Tecnológica Federal Do Paraná – UTFPR, Physics Department, Curitiba, PR, Brazil.Universidade Estadual Paulista (UNESP)Universidade Federal do Paraná (UFPR)Nogueira, Gabriel L.Vieira, Douglas H.Morais, Rogerio M.Serbena, Jose P. M.Seidel, Keli F.Alves, Neri2022-04-29T08:46:02Z2022-04-29T08:46:02Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1109/LED.2021.3120928IEEE Electron Device Letters.1558-05630741-3106http://hdl.handle.net/11449/23153810.1109/LED.2021.31209282-s2.0-85117765402Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengIEEE Electron Device Lettersinfo:eu-repo/semantics/openAccess2024-06-18T18:18:07Zoai:repositorio.unesp.br:11449/231538Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:52:09.234603Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
title A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
spellingShingle A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
Nogueira, Gabriel L.
Field-effect transistor
Schottky diode
Spray-coating
Vertical electrolyte-gated transistor
title_short A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
title_full A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
title_fullStr A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
title_full_unstemmed A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
title_sort A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
author Nogueira, Gabriel L.
author_facet Nogueira, Gabriel L.
Vieira, Douglas H.
Morais, Rogerio M.
Serbena, Jose P. M.
Seidel, Keli F.
Alves, Neri
author_role author
author2 Vieira, Douglas H.
Morais, Rogerio M.
Serbena, Jose P. M.
Seidel, Keli F.
Alves, Neri
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Universidade Federal do Paraná (UFPR)
dc.contributor.author.fl_str_mv Nogueira, Gabriel L.
Vieira, Douglas H.
Morais, Rogerio M.
Serbena, Jose P. M.
Seidel, Keli F.
Alves, Neri
dc.subject.por.fl_str_mv Field-effect transistor
Schottky diode
Spray-coating
Vertical electrolyte-gated transistor
topic Field-effect transistor
Schottky diode
Spray-coating
Vertical electrolyte-gated transistor
description Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-01
2022-04-29T08:46:02Z
2022-04-29T08:46:02Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/LED.2021.3120928
IEEE Electron Device Letters.
1558-0563
0741-3106
http://hdl.handle.net/11449/231538
10.1109/LED.2021.3120928
2-s2.0-85117765402
url http://dx.doi.org/10.1109/LED.2021.3120928
http://hdl.handle.net/11449/231538
identifier_str_mv IEEE Electron Device Letters.
1558-0563
0741-3106
10.1109/LED.2021.3120928
2-s2.0-85117765402
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv IEEE Electron Device Letters
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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