Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
Autor(a) principal: | |
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Data de Publicação: | 2012 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.phpro.2012.03.670 http://hdl.handle.net/11449/8535 |
Resumo: | In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil. |
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Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum wellsemiconductorphotoluminescenceparabolic quantum wellIn this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.Univ Estadual Paulista, BR-17033360 São Paulo, BrazilUniv Estadual Paulista, BR-17033360 São Paulo, BrazilElsevier B.V.Universidade Estadual Paulista (Unesp)Tabata, Américo Sheitiro [UNESP]Oliveira, José Brás Barreto de [UNESP]Pintão, Carlos Alberto Fonzar [UNESP]da Silva, E. C. F.Lamas, T. E.Duarte, C. A.Gusev, G. M.2014-05-20T13:26:29Z2014-05-20T13:26:29Z2012-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject53-56application/pdfhttp://dx.doi.org/10.1016/j.phpro.2012.03.67015th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012.1875-3892http://hdl.handle.net/11449/853510.1016/j.phpro.2012.03.670WOS:000309546800009WOS000309546800009.pdf93540646206436116977466698742311Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng15th Brazilian Workshop on Semiconductor Physicsinfo:eu-repo/semantics/openAccess2024-04-25T17:40:55Zoai:repositorio.unesp.br:11449/8535Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:31:18.613350Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
title |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
spellingShingle |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well Tabata, Américo Sheitiro [UNESP] semiconductor photoluminescence parabolic quantum well |
title_short |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
title_full |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
title_fullStr |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
title_full_unstemmed |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
title_sort |
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well |
author |
Tabata, Américo Sheitiro [UNESP] |
author_facet |
Tabata, Américo Sheitiro [UNESP] Oliveira, José Brás Barreto de [UNESP] Pintão, Carlos Alberto Fonzar [UNESP] da Silva, E. C. F. Lamas, T. E. Duarte, C. A. Gusev, G. M. |
author_role |
author |
author2 |
Oliveira, José Brás Barreto de [UNESP] Pintão, Carlos Alberto Fonzar [UNESP] da Silva, E. C. F. Lamas, T. E. Duarte, C. A. Gusev, G. M. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Tabata, Américo Sheitiro [UNESP] Oliveira, José Brás Barreto de [UNESP] Pintão, Carlos Alberto Fonzar [UNESP] da Silva, E. C. F. Lamas, T. E. Duarte, C. A. Gusev, G. M. |
dc.subject.por.fl_str_mv |
semiconductor photoluminescence parabolic quantum well |
topic |
semiconductor photoluminescence parabolic quantum well |
description |
In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-01-01 2014-05-20T13:26:29Z 2014-05-20T13:26:29Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.phpro.2012.03.670 15th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012. 1875-3892 http://hdl.handle.net/11449/8535 10.1016/j.phpro.2012.03.670 WOS:000309546800009 WOS000309546800009.pdf 9354064620643611 6977466698742311 |
url |
http://dx.doi.org/10.1016/j.phpro.2012.03.670 http://hdl.handle.net/11449/8535 |
identifier_str_mv |
15th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012. 1875-3892 10.1016/j.phpro.2012.03.670 WOS:000309546800009 WOS000309546800009.pdf 9354064620643611 6977466698742311 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
15th Brazilian Workshop on Semiconductor Physics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
53-56 application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier B.V. |
publisher.none.fl_str_mv |
Elsevier B.V. |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128941474447360 |