Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

Detalhes bibliográficos
Autor(a) principal: Tabata, Américo Sheitiro [UNESP]
Data de Publicação: 2012
Outros Autores: Oliveira, José Brás Barreto de [UNESP], Pintão, Carlos Alberto Fonzar [UNESP], da Silva, E. C. F., Lamas, T. E., Duarte, C. A., Gusev, G. M.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.phpro.2012.03.670
http://hdl.handle.net/11449/8535
Resumo: In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.
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spelling Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum wellsemiconductorphotoluminescenceparabolic quantum wellIn this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.Univ Estadual Paulista, BR-17033360 São Paulo, BrazilUniv Estadual Paulista, BR-17033360 São Paulo, BrazilElsevier B.V.Universidade Estadual Paulista (Unesp)Tabata, Américo Sheitiro [UNESP]Oliveira, José Brás Barreto de [UNESP]Pintão, Carlos Alberto Fonzar [UNESP]da Silva, E. C. F.Lamas, T. E.Duarte, C. A.Gusev, G. M.2014-05-20T13:26:29Z2014-05-20T13:26:29Z2012-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject53-56application/pdfhttp://dx.doi.org/10.1016/j.phpro.2012.03.67015th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012.1875-3892http://hdl.handle.net/11449/853510.1016/j.phpro.2012.03.670WOS:000309546800009WOS000309546800009.pdf93540646206436116977466698742311Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng15th Brazilian Workshop on Semiconductor Physicsinfo:eu-repo/semantics/openAccess2024-04-25T17:40:55Zoai:repositorio.unesp.br:11449/8535Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:31:18.613350Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
title Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
spellingShingle Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
Tabata, Américo Sheitiro [UNESP]
semiconductor
photoluminescence
parabolic quantum well
title_short Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
title_full Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
title_fullStr Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
title_full_unstemmed Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
title_sort Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
author Tabata, Américo Sheitiro [UNESP]
author_facet Tabata, Américo Sheitiro [UNESP]
Oliveira, José Brás Barreto de [UNESP]
Pintão, Carlos Alberto Fonzar [UNESP]
da Silva, E. C. F.
Lamas, T. E.
Duarte, C. A.
Gusev, G. M.
author_role author
author2 Oliveira, José Brás Barreto de [UNESP]
Pintão, Carlos Alberto Fonzar [UNESP]
da Silva, E. C. F.
Lamas, T. E.
Duarte, C. A.
Gusev, G. M.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Tabata, Américo Sheitiro [UNESP]
Oliveira, José Brás Barreto de [UNESP]
Pintão, Carlos Alberto Fonzar [UNESP]
da Silva, E. C. F.
Lamas, T. E.
Duarte, C. A.
Gusev, G. M.
dc.subject.por.fl_str_mv semiconductor
photoluminescence
parabolic quantum well
topic semiconductor
photoluminescence
parabolic quantum well
description In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.
publishDate 2012
dc.date.none.fl_str_mv 2012-01-01
2014-05-20T13:26:29Z
2014-05-20T13:26:29Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.phpro.2012.03.670
15th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012.
1875-3892
http://hdl.handle.net/11449/8535
10.1016/j.phpro.2012.03.670
WOS:000309546800009
WOS000309546800009.pdf
9354064620643611
6977466698742311
url http://dx.doi.org/10.1016/j.phpro.2012.03.670
http://hdl.handle.net/11449/8535
identifier_str_mv 15th Brazilian Workshop on Semiconductor Physics. Amsterdam: Elsevier B.V., v. 28, p. 53-56, 2012.
1875-3892
10.1016/j.phpro.2012.03.670
WOS:000309546800009
WOS000309546800009.pdf
9354064620643611
6977466698742311
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 15th Brazilian Workshop on Semiconductor Physics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 53-56
application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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