Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/LAEDC54796.2022.9908239 http://hdl.handle.net/11449/249337 |
Resumo: | In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications. |
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Repositório Institucional da UNESP |
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Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafersAlGaN/GaNgate leakageHEMTHigh-temperatureIn this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.São Paulo State University (UNESP) Institute of Science and Technology, SPGhent University Ghent Belgium Also ImecSão Paulo State University (UNESP) Institute of Science and Technology, SPUniversidade Estadual Paulista (UNESP)Belgium Also ImecJunior, Braz Baptista [UNESP]De Andrade, Maria Gloria Cano [UNESP]De Oliveira Bergamim, Luis Felipe [UNESP]Nogueira, Carlos Roberto [UNESP]Abud, Renan Baptista [UNESP]Simoen, Eddy2023-07-29T15:13:19Z2023-07-29T15:13:19Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/LAEDC54796.2022.99082392022 IEEE Latin America Electron Devices Conference, LAEDC 2022.http://hdl.handle.net/11449/24933710.1109/LAEDC54796.2022.99082392-s2.0-85141344803Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2022 IEEE Latin America Electron Devices Conference, LAEDC 2022info:eu-repo/semantics/openAccess2023-07-29T15:13:19Zoai:repositorio.unesp.br:11449/249337Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:02:48.936571Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
title |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
spellingShingle |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers Junior, Braz Baptista [UNESP] AlGaN/GaN gate leakage HEMT High-temperature |
title_short |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
title_full |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
title_fullStr |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
title_full_unstemmed |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
title_sort |
Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers |
author |
Junior, Braz Baptista [UNESP] |
author_facet |
Junior, Braz Baptista [UNESP] De Andrade, Maria Gloria Cano [UNESP] De Oliveira Bergamim, Luis Felipe [UNESP] Nogueira, Carlos Roberto [UNESP] Abud, Renan Baptista [UNESP] Simoen, Eddy |
author_role |
author |
author2 |
De Andrade, Maria Gloria Cano [UNESP] De Oliveira Bergamim, Luis Felipe [UNESP] Nogueira, Carlos Roberto [UNESP] Abud, Renan Baptista [UNESP] Simoen, Eddy |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Belgium Also Imec |
dc.contributor.author.fl_str_mv |
Junior, Braz Baptista [UNESP] De Andrade, Maria Gloria Cano [UNESP] De Oliveira Bergamim, Luis Felipe [UNESP] Nogueira, Carlos Roberto [UNESP] Abud, Renan Baptista [UNESP] Simoen, Eddy |
dc.subject.por.fl_str_mv |
AlGaN/GaN gate leakage HEMT High-temperature |
topic |
AlGaN/GaN gate leakage HEMT High-temperature |
description |
In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-01-01 2023-07-29T15:13:19Z 2023-07-29T15:13:19Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/LAEDC54796.2022.9908239 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022. http://hdl.handle.net/11449/249337 10.1109/LAEDC54796.2022.9908239 2-s2.0-85141344803 |
url |
http://dx.doi.org/10.1109/LAEDC54796.2022.9908239 http://hdl.handle.net/11449/249337 |
identifier_str_mv |
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022. 10.1109/LAEDC54796.2022.9908239 2-s2.0-85141344803 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128451427696640 |