Printed in-plane electrolyte-gated transistor based on zinc oxide

Detalhes bibliográficos
Autor(a) principal: Morais, Rogério [UNESP]
Data de Publicação: 2022
Outros Autores: Vieira, Douglas Henrique [UNESP], Klem, Maykel Dos Santos [UNESP], Gaspar, Cristina, Pereira, Luís, Martins, Rodrigo, Alves, Neri [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1088/1361-6641/ac48da
http://hdl.handle.net/11449/234110
Resumo: Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs.
id UNSP_a83978581c26153485ccb8c3b1395b9b
oai_identifier_str oai:repositorio.unesp.br:11449/234110
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Printed in-plane electrolyte-gated transistor based on zinc oxideelectrolyte-gated transistorin-plane gateinkjet-printingprinted electronicsscreen-printingZnOPrinted electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs.School of Technology and Sciences Department of Physics S o Paulo State University - UNESP, SPFaculty of Science and Technology (FCT) CENIMAT/I3N Department of Materials Science Universidade NOVA de Lisboa CEMOP-UNINOVASchool of Technology and Sciences Department of Physics S o Paulo State University - UNESP, SPUniversidade Estadual Paulista (UNESP)CEMOP-UNINOVAMorais, Rogério [UNESP]Vieira, Douglas Henrique [UNESP]Klem, Maykel Dos Santos [UNESP]Gaspar, CristinaPereira, LuísMartins, RodrigoAlves, Neri [UNESP]2022-05-01T13:41:29Z2022-05-01T13:41:29Z2022-03-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1088/1361-6641/ac48daSemiconductor Science and Technology, v. 37, n. 3, 2022.1361-66410268-1242http://hdl.handle.net/11449/23411010.1088/1361-6641/ac48da2-s2.0-85124200218Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSemiconductor Science and Technologyinfo:eu-repo/semantics/openAccess2024-06-19T12:44:23Zoai:repositorio.unesp.br:11449/234110Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:03:18.310051Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Printed in-plane electrolyte-gated transistor based on zinc oxide
title Printed in-plane electrolyte-gated transistor based on zinc oxide
spellingShingle Printed in-plane electrolyte-gated transistor based on zinc oxide
Morais, Rogério [UNESP]
electrolyte-gated transistor
in-plane gate
inkjet-printing
printed electronics
screen-printing
ZnO
title_short Printed in-plane electrolyte-gated transistor based on zinc oxide
title_full Printed in-plane electrolyte-gated transistor based on zinc oxide
title_fullStr Printed in-plane electrolyte-gated transistor based on zinc oxide
title_full_unstemmed Printed in-plane electrolyte-gated transistor based on zinc oxide
title_sort Printed in-plane electrolyte-gated transistor based on zinc oxide
author Morais, Rogério [UNESP]
author_facet Morais, Rogério [UNESP]
Vieira, Douglas Henrique [UNESP]
Klem, Maykel Dos Santos [UNESP]
Gaspar, Cristina
Pereira, Luís
Martins, Rodrigo
Alves, Neri [UNESP]
author_role author
author2 Vieira, Douglas Henrique [UNESP]
Klem, Maykel Dos Santos [UNESP]
Gaspar, Cristina
Pereira, Luís
Martins, Rodrigo
Alves, Neri [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
CEMOP-UNINOVA
dc.contributor.author.fl_str_mv Morais, Rogério [UNESP]
Vieira, Douglas Henrique [UNESP]
Klem, Maykel Dos Santos [UNESP]
Gaspar, Cristina
Pereira, Luís
Martins, Rodrigo
Alves, Neri [UNESP]
dc.subject.por.fl_str_mv electrolyte-gated transistor
in-plane gate
inkjet-printing
printed electronics
screen-printing
ZnO
topic electrolyte-gated transistor
in-plane gate
inkjet-printing
printed electronics
screen-printing
ZnO
description Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs.
publishDate 2022
dc.date.none.fl_str_mv 2022-05-01T13:41:29Z
2022-05-01T13:41:29Z
2022-03-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1088/1361-6641/ac48da
Semiconductor Science and Technology, v. 37, n. 3, 2022.
1361-6641
0268-1242
http://hdl.handle.net/11449/234110
10.1088/1361-6641/ac48da
2-s2.0-85124200218
url http://dx.doi.org/10.1088/1361-6641/ac48da
http://hdl.handle.net/11449/234110
identifier_str_mv Semiconductor Science and Technology, v. 37, n. 3, 2022.
1361-6641
0268-1242
10.1088/1361-6641/ac48da
2-s2.0-85124200218
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Semiconductor Science and Technology
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128745963257856