Printed in-plane electrolyte-gated transistor based on zinc oxide
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/1361-6641/ac48da http://hdl.handle.net/11449/234110 |
Resumo: | Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs. |
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Repositório Institucional da UNESP |
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2946 |
spelling |
Printed in-plane electrolyte-gated transistor based on zinc oxideelectrolyte-gated transistorin-plane gateinkjet-printingprinted electronicsscreen-printingZnOPrinted electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs.School of Technology and Sciences Department of Physics S o Paulo State University - UNESP, SPFaculty of Science and Technology (FCT) CENIMAT/I3N Department of Materials Science Universidade NOVA de Lisboa CEMOP-UNINOVASchool of Technology and Sciences Department of Physics S o Paulo State University - UNESP, SPUniversidade Estadual Paulista (UNESP)CEMOP-UNINOVAMorais, Rogério [UNESP]Vieira, Douglas Henrique [UNESP]Klem, Maykel Dos Santos [UNESP]Gaspar, CristinaPereira, LuísMartins, RodrigoAlves, Neri [UNESP]2022-05-01T13:41:29Z2022-05-01T13:41:29Z2022-03-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1088/1361-6641/ac48daSemiconductor Science and Technology, v. 37, n. 3, 2022.1361-66410268-1242http://hdl.handle.net/11449/23411010.1088/1361-6641/ac48da2-s2.0-85124200218Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSemiconductor Science and Technologyinfo:eu-repo/semantics/openAccess2024-06-19T12:44:23Zoai:repositorio.unesp.br:11449/234110Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:03:18.310051Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
title |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
spellingShingle |
Printed in-plane electrolyte-gated transistor based on zinc oxide Morais, Rogério [UNESP] electrolyte-gated transistor in-plane gate inkjet-printing printed electronics screen-printing ZnO |
title_short |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
title_full |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
title_fullStr |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
title_full_unstemmed |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
title_sort |
Printed in-plane electrolyte-gated transistor based on zinc oxide |
author |
Morais, Rogério [UNESP] |
author_facet |
Morais, Rogério [UNESP] Vieira, Douglas Henrique [UNESP] Klem, Maykel Dos Santos [UNESP] Gaspar, Cristina Pereira, Luís Martins, Rodrigo Alves, Neri [UNESP] |
author_role |
author |
author2 |
Vieira, Douglas Henrique [UNESP] Klem, Maykel Dos Santos [UNESP] Gaspar, Cristina Pereira, Luís Martins, Rodrigo Alves, Neri [UNESP] |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) CEMOP-UNINOVA |
dc.contributor.author.fl_str_mv |
Morais, Rogério [UNESP] Vieira, Douglas Henrique [UNESP] Klem, Maykel Dos Santos [UNESP] Gaspar, Cristina Pereira, Luís Martins, Rodrigo Alves, Neri [UNESP] |
dc.subject.por.fl_str_mv |
electrolyte-gated transistor in-plane gate inkjet-printing printed electronics screen-printing ZnO |
topic |
electrolyte-gated transistor in-plane gate inkjet-printing printed electronics screen-printing ZnO |
description |
Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed EGTs with in-plane gate transistor (IPGT) architecture based on zinc oxide nanoparticles. The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a standard device, using the same structure of the IPGT described above with the addition of an indium tin oxide strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.95 0.55 cm2 V-1 s-1, while the W/L = 2.5 device exhibited a mobility of 3.03 0.52 cm2 V-1 s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the device's geometric parameters were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited higher values for mobility and transconductance than the top-gate transistor, showing that the IPGTs architecture is a good approach for cheap and printed transistors with performance comparable to standard top-gate EGTs. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-05-01T13:41:29Z 2022-05-01T13:41:29Z 2022-03-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/1361-6641/ac48da Semiconductor Science and Technology, v. 37, n. 3, 2022. 1361-6641 0268-1242 http://hdl.handle.net/11449/234110 10.1088/1361-6641/ac48da 2-s2.0-85124200218 |
url |
http://dx.doi.org/10.1088/1361-6641/ac48da http://hdl.handle.net/11449/234110 |
identifier_str_mv |
Semiconductor Science and Technology, v. 37, n. 3, 2022. 1361-6641 0268-1242 10.1088/1361-6641/ac48da 2-s2.0-85124200218 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Semiconductor Science and Technology |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128745963257856 |