ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device

Detalhes bibliográficos
Autor(a) principal: Vieira, Douglas Henrique [UNESP]
Data de Publicação: 2022
Outros Autores: Nogueira, Gabriel Leonardo [UNESP], Morais, Rogério Miranda [UNESP], Fugikawa-Santos, Lucas [UNESP], Seidel, Keli Fabiana, Alves, Neri [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.sna.2022.113989
http://hdl.handle.net/11449/247868
Resumo: Transistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics.
id UNSP_e632ef9be08d9cbb3f6feae864d838d7
oai_identifier_str oai:repositorio.unesp.br:11449/247868
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing deviceElectrolyte-gatedPhotodetectorSpray-coatingTransistorUltravioletZnOTransistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)São Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SPUniversidade Tecnológica Federal Do Paraná – UTFPR Physics Department, PRSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SPFAPESP: 2018/04169–3, 2020/12282–4, 2018/02037–2FAPESP: 2019/08019–9Universidade Estadual Paulista (UNESP)Physics DepartmentVieira, Douglas Henrique [UNESP]Nogueira, Gabriel Leonardo [UNESP]Morais, Rogério Miranda [UNESP]Fugikawa-Santos, Lucas [UNESP]Seidel, Keli FabianaAlves, Neri [UNESP]2023-07-29T13:28:05Z2023-07-29T13:28:05Z2022-11-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.sna.2022.113989Sensors and Actuators A: Physical, v. 347.0924-4247http://hdl.handle.net/11449/24786810.1016/j.sna.2022.1139892-s2.0-85141778249Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSensors and Actuators A: Physicalinfo:eu-repo/semantics/openAccess2024-06-18T18:18:16Zoai:repositorio.unesp.br:11449/247868Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:11:01.033943Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
title ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
spellingShingle ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
Vieira, Douglas Henrique [UNESP]
Electrolyte-gated
Photodetector
Spray-coating
Transistor
Ultraviolet
ZnO
title_short ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
title_full ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
title_fullStr ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
title_full_unstemmed ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
title_sort ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
author Vieira, Douglas Henrique [UNESP]
author_facet Vieira, Douglas Henrique [UNESP]
Nogueira, Gabriel Leonardo [UNESP]
Morais, Rogério Miranda [UNESP]
Fugikawa-Santos, Lucas [UNESP]
Seidel, Keli Fabiana
Alves, Neri [UNESP]
author_role author
author2 Nogueira, Gabriel Leonardo [UNESP]
Morais, Rogério Miranda [UNESP]
Fugikawa-Santos, Lucas [UNESP]
Seidel, Keli Fabiana
Alves, Neri [UNESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Physics Department
dc.contributor.author.fl_str_mv Vieira, Douglas Henrique [UNESP]
Nogueira, Gabriel Leonardo [UNESP]
Morais, Rogério Miranda [UNESP]
Fugikawa-Santos, Lucas [UNESP]
Seidel, Keli Fabiana
Alves, Neri [UNESP]
dc.subject.por.fl_str_mv Electrolyte-gated
Photodetector
Spray-coating
Transistor
Ultraviolet
ZnO
topic Electrolyte-gated
Photodetector
Spray-coating
Transistor
Ultraviolet
ZnO
description Transistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics.
publishDate 2022
dc.date.none.fl_str_mv 2022-11-01
2023-07-29T13:28:05Z
2023-07-29T13:28:05Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.sna.2022.113989
Sensors and Actuators A: Physical, v. 347.
0924-4247
http://hdl.handle.net/11449/247868
10.1016/j.sna.2022.113989
2-s2.0-85141778249
url http://dx.doi.org/10.1016/j.sna.2022.113989
http://hdl.handle.net/11449/247868
identifier_str_mv Sensors and Actuators A: Physical, v. 347.
0924-4247
10.1016/j.sna.2022.113989
2-s2.0-85141778249
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Sensors and Actuators A: Physical
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129401005539328