ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.sna.2022.113989 http://hdl.handle.net/11449/247868 |
Resumo: | Transistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics. |
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ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing deviceElectrolyte-gatedPhotodetectorSpray-coatingTransistorUltravioletZnOTransistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)São Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SPUniversidade Tecnológica Federal Do Paraná – UTFPR Physics Department, PRSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences (IGCE) Physics Department, SPFAPESP: 2018/04169–3, 2020/12282–4, 2018/02037–2FAPESP: 2019/08019–9Universidade Estadual Paulista (UNESP)Physics DepartmentVieira, Douglas Henrique [UNESP]Nogueira, Gabriel Leonardo [UNESP]Morais, Rogério Miranda [UNESP]Fugikawa-Santos, Lucas [UNESP]Seidel, Keli FabianaAlves, Neri [UNESP]2023-07-29T13:28:05Z2023-07-29T13:28:05Z2022-11-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.sna.2022.113989Sensors and Actuators A: Physical, v. 347.0924-4247http://hdl.handle.net/11449/24786810.1016/j.sna.2022.1139892-s2.0-85141778249Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSensors and Actuators A: Physicalinfo:eu-repo/semantics/openAccess2024-06-18T18:18:16Zoai:repositorio.unesp.br:11449/247868Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:11:01.033943Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
title |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
spellingShingle |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device Vieira, Douglas Henrique [UNESP] Electrolyte-gated Photodetector Spray-coating Transistor Ultraviolet ZnO |
title_short |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
title_full |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
title_fullStr |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
title_full_unstemmed |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
title_sort |
ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device |
author |
Vieira, Douglas Henrique [UNESP] |
author_facet |
Vieira, Douglas Henrique [UNESP] Nogueira, Gabriel Leonardo [UNESP] Morais, Rogério Miranda [UNESP] Fugikawa-Santos, Lucas [UNESP] Seidel, Keli Fabiana Alves, Neri [UNESP] |
author_role |
author |
author2 |
Nogueira, Gabriel Leonardo [UNESP] Morais, Rogério Miranda [UNESP] Fugikawa-Santos, Lucas [UNESP] Seidel, Keli Fabiana Alves, Neri [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Physics Department |
dc.contributor.author.fl_str_mv |
Vieira, Douglas Henrique [UNESP] Nogueira, Gabriel Leonardo [UNESP] Morais, Rogério Miranda [UNESP] Fugikawa-Santos, Lucas [UNESP] Seidel, Keli Fabiana Alves, Neri [UNESP] |
dc.subject.por.fl_str_mv |
Electrolyte-gated Photodetector Spray-coating Transistor Ultraviolet ZnO |
topic |
Electrolyte-gated Photodetector Spray-coating Transistor Ultraviolet ZnO |
description |
Transistors based in solution-processable semiconducting metal oxides stands out for disposable, printed and wearable electronics. Here we report a transparent and printed ZnO-based electrolyte-gated transistor (EGT), using cellulose electrolyte, which exhibited low-voltage operation, below 2 V, threshold voltage of 0.16 V, high on-state current of 0.3 mA, Ion/Ioff ratio of 3.0 × 105 and field-effect mobility of 0.17 cm²/Vs. We have demonstrated that such EGT can be applied as an ultraviolet sensing device, showing multiparametric response with shift in its: threshold voltage (VT), subthreshold swing (S), transconductance (gm) and enhancement in the field-effect mobility in saturation regime (μs) when exposed to different UV irradiance levels. This device achieves high IUV/Idark ratio, responsivity and EQE of 1 × 105, 8.4 × 104 A/W and 2.7 × 106%, respectively, presenting very stable properties when tested in ambient atmosphere, without encapsulation, and with no visible effects of ageing during the period of observation. The variation in the transistor parameters and the high values of the figures of merit for photodetectors, categorize this EGT as a multiparametric UV sensor with good performance and compatible with printed and transparent electronics. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-11-01 2023-07-29T13:28:05Z 2023-07-29T13:28:05Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.sna.2022.113989 Sensors and Actuators A: Physical, v. 347. 0924-4247 http://hdl.handle.net/11449/247868 10.1016/j.sna.2022.113989 2-s2.0-85141778249 |
url |
http://dx.doi.org/10.1016/j.sna.2022.113989 http://hdl.handle.net/11449/247868 |
identifier_str_mv |
Sensors and Actuators A: Physical, v. 347. 0924-4247 10.1016/j.sna.2022.113989 2-s2.0-85141778249 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Sensors and Actuators A: Physical |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129401005539328 |