Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs

• Autor(a) principal: Kumar, Dinesh
• Data de Publicação: 2021
• Outros Autores: Gomes, Tiago [UNESP], Misra, Neeraj Kumar, Sahu, Anil Kumar, Kettle, J.
• Tipo de documento: Artigo de conferência
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1016/j.matpr.2021.02.710; http://hdl.handle.net/11449/222227
• topic: Metal oxide; Mobility; Optimization; Taguchi Orthogonal Array (OA); ZnO TFTs

This study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion/Ioffratio (104). The optimal configuration was found to be high annealing temperature 450 °C under N2atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method.