Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.matpr.2021.02.710 http://hdl.handle.net/11449/222227 |
Resumo: | This study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion/Ioffratio (104). The optimal configuration was found to be high annealing temperature 450 °C under N2atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method. |
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Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTsMetal oxideMobilityOptimizationTaguchi Orthogonal Array (OA)ZnO TFTsThis study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion/Ioffratio (104). The optimal configuration was found to be high annealing temperature 450 °C under N2atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method.Department of Electronics and Communication Engineering Bharat Institute of Engineering and Technology, TelanganaSchool of Electronics Bangor University, BangorSão Paulo State University (Unesp) Institute of Geosciences and Exact SciencesJames Watt School of Engineering University of GlasgowSão Paulo State University (Unesp) Institute of Geosciences and Exact SciencesBharat Institute of Engineering and TechnologyBangor UniversityUniversidade Estadual Paulista (UNESP)University of GlasgowKumar, DineshGomes, Tiago [UNESP]Misra, Neeraj KumarSahu, Anil KumarKettle, J.2022-04-28T19:43:30Z2022-04-28T19:43:30Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject5757-5760http://dx.doi.org/10.1016/j.matpr.2021.02.710Materials Today: Proceedings, v. 46, p. 5757-5760.2214-7853http://hdl.handle.net/11449/22222710.1016/j.matpr.2021.02.7102-s2.0-85112676655Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Today: Proceedingsinfo:eu-repo/semantics/openAccess2022-04-28T19:43:30Zoai:repositorio.unesp.br:11449/222227Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:17:56.692249Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
title |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
spellingShingle |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs Kumar, Dinesh Metal oxide Mobility Optimization Taguchi Orthogonal Array (OA) ZnO TFTs |
title_short |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
title_full |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
title_fullStr |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
title_full_unstemmed |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
title_sort |
Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs |
author |
Kumar, Dinesh |
author_facet |
Kumar, Dinesh Gomes, Tiago [UNESP] Misra, Neeraj Kumar Sahu, Anil Kumar Kettle, J. |
author_role |
author |
author2 |
Gomes, Tiago [UNESP] Misra, Neeraj Kumar Sahu, Anil Kumar Kettle, J. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Bharat Institute of Engineering and Technology Bangor University Universidade Estadual Paulista (UNESP) University of Glasgow |
dc.contributor.author.fl_str_mv |
Kumar, Dinesh Gomes, Tiago [UNESP] Misra, Neeraj Kumar Sahu, Anil Kumar Kettle, J. |
dc.subject.por.fl_str_mv |
Metal oxide Mobility Optimization Taguchi Orthogonal Array (OA) ZnO TFTs |
topic |
Metal oxide Mobility Optimization Taguchi Orthogonal Array (OA) ZnO TFTs |
description |
This study applies the Taguchi orthogonal array (OA) to improve and optimize the performance of ZnO thin-film transistors (TFT). Radiofrequency (RF) sputtering method was used to deposit the active layer of TFTs. The annealing temperature, environmental conditions, sputter rate, and thin-film thickness were the parameters whose impact on output parameters like mobility was analyzed in the process optimization using design of experiment (DOE). The ZnO TFTs show state-of-the-art performance features, including high saturation mobility (0.83c), high Ion/Ioffratio (104). The optimal configuration was found to be high annealing temperature 450 °C under N2atmosphere, low sputter rate. This paper presents a method that can empower the fast optimization of metal oxide TFTs for future developments in the manufacturing process. If a full factorial design had been implemented, 64 tests would have been necessary, however in this work, we have reduced the number of tests to 9 only using Taguchi method. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 2022-04-28T19:43:30Z 2022-04-28T19:43:30Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.matpr.2021.02.710 Materials Today: Proceedings, v. 46, p. 5757-5760. 2214-7853 http://hdl.handle.net/11449/222227 10.1016/j.matpr.2021.02.710 2-s2.0-85112676655 |
url |
http://dx.doi.org/10.1016/j.matpr.2021.02.710 http://hdl.handle.net/11449/222227 |
identifier_str_mv |
Materials Today: Proceedings, v. 46, p. 5757-5760. 2214-7853 10.1016/j.matpr.2021.02.710 2-s2.0-85112676655 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Today: Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
5757-5760 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1808128788099235840 |