Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method

Detalhes bibliográficos
Autor(a) principal: Kaezmarek Pedrini, Luiz F. [UNESP]
Data de Publicação: 2020
Outros Autores: Santos, Stevan B. O. [UNESP], Trino, Luciana D., Scalvi, Luis V. A. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s11664-020-08416-z
http://hdl.handle.net/11449/199296
Resumo: A method to prepare Yb-doped TiO2 is proposed, using titanium isopropoxide and ytterbium oxide. Thin films and powders are produced through the sol–gel technique where the Yb concentrations are 0.01 at.%, 0.02 at.%, 1 at.%, 2 at.% 4 at.% and 8 at.%. The increase in the doping concentration intensifies gradually the sample transparency for the whole observed spectrum and reaches the transparency degree of the undoped sample with the highest concentration of ytterbium. By means of x-ray diffraction (XRD) we find that the solution’s pH leads to the formation of a rutile structure which is compensated for by lanthanide doping, inhibiting the anatase–rutile phase transformation. Then, the XRD profile depends on the Yb concentration, being mostly anatase for undoped and highly (8 at.%) doped samples, with mixed ratios of these two phases in other concentrations. Maintaining an acid solution leads to fewer intergrain defects in the rutile structure contributing to higher conductivity. Photo-induced investigation of 8 at.% Yb-doped thin film, using several light sources leads to distinct behavior concerning the excitation of intra-bandgap states and/or electron–hole pairs. This result helps to understand the electronic transport in Yb-doped TiO2 and shows that devices based on its conductivity may have improved performance by irradiation with controlled light energy.
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spelling Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Methodphase transitionphotoconductivityTitanium dioxideytterbiumA method to prepare Yb-doped TiO2 is proposed, using titanium isopropoxide and ytterbium oxide. Thin films and powders are produced through the sol–gel technique where the Yb concentrations are 0.01 at.%, 0.02 at.%, 1 at.%, 2 at.% 4 at.% and 8 at.%. The increase in the doping concentration intensifies gradually the sample transparency for the whole observed spectrum and reaches the transparency degree of the undoped sample with the highest concentration of ytterbium. By means of x-ray diffraction (XRD) we find that the solution’s pH leads to the formation of a rutile structure which is compensated for by lanthanide doping, inhibiting the anatase–rutile phase transformation. Then, the XRD profile depends on the Yb concentration, being mostly anatase for undoped and highly (8 at.%) doped samples, with mixed ratios of these two phases in other concentrations. Maintaining an acid solution leads to fewer intergrain defects in the rutile structure contributing to higher conductivity. Photo-induced investigation of 8 at.% Yb-doped thin film, using several light sources leads to distinct behavior concerning the excitation of intra-bandgap states and/or electron–hole pairs. This result helps to understand the electronic transport in Yb-doped TiO2 and shows that devices based on its conductivity may have improved performance by irradiation with controlled light energy.Department of Physics FC and POSMAT (Post-Graduate Program in Materials Science and Technology) São Paulo State University (UNESP)Brazilian Biosciences National Laboratory (LNBio) Brazilian Center for Research in Energy and Materials (CNPEM)Department of Physics FC and POSMAT (Post-Graduate Program in Materials Science and Technology) São Paulo State University (UNESP)Universidade Estadual Paulista (Unesp)Brazilian Center for Research in Energy and Materials (CNPEM)Kaezmarek Pedrini, Luiz F. [UNESP]Santos, Stevan B. O. [UNESP]Trino, Luciana D.Scalvi, Luis V. A. [UNESP]2020-12-12T01:35:58Z2020-12-12T01:35:58Z2020-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1007/s11664-020-08416-zJournal of Electronic Materials.1543-186X0361-5235http://hdl.handle.net/11449/19929610.1007/s11664-020-08416-z2-s2.0-85089857991Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Electronic Materialsinfo:eu-repo/semantics/openAccess2021-10-23T07:00:25Zoai:repositorio.unesp.br:11449/199296Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T07:00:25Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
title Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
spellingShingle Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
Kaezmarek Pedrini, Luiz F. [UNESP]
phase transition
photoconductivity
Titanium dioxide
ytterbium
title_short Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
title_full Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
title_fullStr Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
title_full_unstemmed Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
title_sort Anatase–Rutile Transition and Photo-Induced Conductivity of Highly Yb-Doped TiO2 Films Deposited by Acid Sol–Gel Dip-Coating Method
author Kaezmarek Pedrini, Luiz F. [UNESP]
author_facet Kaezmarek Pedrini, Luiz F. [UNESP]
Santos, Stevan B. O. [UNESP]
Trino, Luciana D.
Scalvi, Luis V. A. [UNESP]
author_role author
author2 Santos, Stevan B. O. [UNESP]
Trino, Luciana D.
Scalvi, Luis V. A. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Brazilian Center for Research in Energy and Materials (CNPEM)
dc.contributor.author.fl_str_mv Kaezmarek Pedrini, Luiz F. [UNESP]
Santos, Stevan B. O. [UNESP]
Trino, Luciana D.
Scalvi, Luis V. A. [UNESP]
dc.subject.por.fl_str_mv phase transition
photoconductivity
Titanium dioxide
ytterbium
topic phase transition
photoconductivity
Titanium dioxide
ytterbium
description A method to prepare Yb-doped TiO2 is proposed, using titanium isopropoxide and ytterbium oxide. Thin films and powders are produced through the sol–gel technique where the Yb concentrations are 0.01 at.%, 0.02 at.%, 1 at.%, 2 at.% 4 at.% and 8 at.%. The increase in the doping concentration intensifies gradually the sample transparency for the whole observed spectrum and reaches the transparency degree of the undoped sample with the highest concentration of ytterbium. By means of x-ray diffraction (XRD) we find that the solution’s pH leads to the formation of a rutile structure which is compensated for by lanthanide doping, inhibiting the anatase–rutile phase transformation. Then, the XRD profile depends on the Yb concentration, being mostly anatase for undoped and highly (8 at.%) doped samples, with mixed ratios of these two phases in other concentrations. Maintaining an acid solution leads to fewer intergrain defects in the rutile structure contributing to higher conductivity. Photo-induced investigation of 8 at.% Yb-doped thin film, using several light sources leads to distinct behavior concerning the excitation of intra-bandgap states and/or electron–hole pairs. This result helps to understand the electronic transport in Yb-doped TiO2 and shows that devices based on its conductivity may have improved performance by irradiation with controlled light energy.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-12T01:35:58Z
2020-12-12T01:35:58Z
2020-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s11664-020-08416-z
Journal of Electronic Materials.
1543-186X
0361-5235
http://hdl.handle.net/11449/199296
10.1007/s11664-020-08416-z
2-s2.0-85089857991
url http://dx.doi.org/10.1007/s11664-020-08416-z
http://hdl.handle.net/11449/199296
identifier_str_mv Journal of Electronic Materials.
1543-186X
0361-5235
10.1007/s11664-020-08416-z
2-s2.0-85089857991
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Electronic Materials
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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