Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

Detalhes bibliográficos
Autor(a) principal: Teixeira, Fernando F.
Data de Publicação: 2016
Outros Autores: Agopian, Paula G.D. [UNESP], Martino, Joao A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro.2016.7731330
http://hdl.handle.net/11449/169292
Resumo: In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.
id UNSP_b4d5a4107f092c8377b0b2e305452eb4
oai_identifier_str oai:repositorio.unesp.br:11449/169292
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFETself-alignedSOISpacerUltra Thin Body and Buried OxideunderlapIn this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.LSI/PSI/USP University of Sao PauloUNESP Univ. Estadual PaulistaUNESP Univ. Estadual PaulistaUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Teixeira, Fernando F.Agopian, Paula G.D. [UNESP]Martino, Joao A.2018-12-11T16:45:14Z2018-12-11T16:45:14Z2016-11-02info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2016.7731330SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.http://hdl.handle.net/11449/16929210.1109/SBMicro.2016.77313302-s2.0-8500734933904969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Foruminfo:eu-repo/semantics/openAccess2021-10-23T21:47:18Zoai:repositorio.unesp.br:11449/169292Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:05:17.480473Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
title Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
spellingShingle Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
Teixeira, Fernando F.
self-aligned
SOI
Spacer
Ultra Thin Body and Buried Oxide
underlap
title_short Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
title_full Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
title_fullStr Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
title_full_unstemmed Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
title_sort Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
author Teixeira, Fernando F.
author_facet Teixeira, Fernando F.
Agopian, Paula G.D. [UNESP]
Martino, Joao A.
author_role author
author2 Agopian, Paula G.D. [UNESP]
Martino, Joao A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Teixeira, Fernando F.
Agopian, Paula G.D. [UNESP]
Martino, Joao A.
dc.subject.por.fl_str_mv self-aligned
SOI
Spacer
Ultra Thin Body and Buried Oxide
underlap
topic self-aligned
SOI
Spacer
Ultra Thin Body and Buried Oxide
underlap
description In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.
publishDate 2016
dc.date.none.fl_str_mv 2016-11-02
2018-12-11T16:45:14Z
2018-12-11T16:45:14Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro.2016.7731330
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
http://hdl.handle.net/11449/169292
10.1109/SBMicro.2016.7731330
2-s2.0-85007349339
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1109/SBMicro.2016.7731330
http://hdl.handle.net/11449/169292
identifier_str_mv SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
10.1109/SBMicro.2016.7731330
2-s2.0-85007349339
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128753767809024

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