Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1103/PhysRevB.80.235318 http://hdl.handle.net/11449/225972 |
Resumo: | A numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping. © 2009 The American Physical Society. |
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Universal zero-bias conductance through a quantum wire side-coupled to a quantum dotA numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping. © 2009 The American Physical Society.Departamento de Física e Informática Instituto de Física de São Carlos Universidade de Sao Paulo, 369 São Carlos, SPDepartamento de Física Instituto de Geociências e Ciências Exatas Universidade Estadual Paulista, 13500 Rio Claro, SPInstituto de Física Universidade Federal Fluminense, Niterói 24210-346, RJDepartamento de Física Instituto de Geociências e Ciências Exatas Universidade Estadual Paulista, 13500 Rio Claro, SPUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Universidade Federal Fluminense (UFF)Seridonio, A. C.Yoshida, M. [UNESP]Oliveira, L. N.2022-04-28T21:11:45Z2022-04-28T21:11:45Z2009-12-16info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1103/PhysRevB.80.235318Physical Review B - Condensed Matter and Materials Physics, v. 80, n. 23, 2009.1098-01211550-235Xhttp://hdl.handle.net/11449/22597210.1103/PhysRevB.80.2353182-s2.0-77954699158Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengPhysical Review B - Condensed Matter and Materials Physicsinfo:eu-repo/semantics/openAccess2022-04-28T21:11:45Zoai:repositorio.unesp.br:11449/225972Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-28T21:11:45Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
title |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
spellingShingle |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot Seridonio, A. C. |
title_short |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
title_full |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
title_fullStr |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
title_full_unstemmed |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
title_sort |
Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot |
author |
Seridonio, A. C. |
author_facet |
Seridonio, A. C. Yoshida, M. [UNESP] Oliveira, L. N. |
author_role |
author |
author2 |
Yoshida, M. [UNESP] Oliveira, L. N. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (UNESP) Universidade Federal Fluminense (UFF) |
dc.contributor.author.fl_str_mv |
Seridonio, A. C. Yoshida, M. [UNESP] Oliveira, L. N. |
description |
A numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping. © 2009 The American Physical Society. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-12-16 2022-04-28T21:11:45Z 2022-04-28T21:11:45Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1103/PhysRevB.80.235318 Physical Review B - Condensed Matter and Materials Physics, v. 80, n. 23, 2009. 1098-0121 1550-235X http://hdl.handle.net/11449/225972 10.1103/PhysRevB.80.235318 2-s2.0-77954699158 |
url |
http://dx.doi.org/10.1103/PhysRevB.80.235318 http://hdl.handle.net/11449/225972 |
identifier_str_mv |
Physical Review B - Condensed Matter and Materials Physics, v. 80, n. 23, 2009. 1098-0121 1550-235X 10.1103/PhysRevB.80.235318 2-s2.0-77954699158 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Physical Review B - Condensed Matter and Materials Physics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1799964906730029056 |