On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2

Detalhes bibliográficos
Autor(a) principal: De Freitas Bueno, Cristina [UNESP]
Data de Publicação: 2016
Outros Autores: De Andrade Scalvi, Luis Vicente [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.tsf.2016.06.008
http://hdl.handle.net/11449/168732
Resumo: GaAs/SnO2:2%Eu heterojunctions are deposited by resistive evaporation and sol-gel-dip-coating techniques respectively, with the top layer thermally annealed at different temperatures. The sample annealed at 200 °C/1 h has a much higher conductivity and a lower deepest level (79 meV) than the sample annealed at 400 °C/20 min, for which the deepest level value is 98 meV. The decay of photo-induced current at room temperature for these heterojunctions shows a decay of 48.8% from the initial value for a sample annealed at 200 °C/1 h, compared to a decay of 54.2% from the initial value for a sample treated at 400 °C/20 min. The excitation source has a broad band with energy lower than 1.65 eV, assuring that no electron-hole pair is generated in the SnO2 (top) layer. The data fitting seems to indicate that, although the grain boundary scattering dominates the mobility, the inclusion of time dependent terms is needed, such as multi-center capture or ionized impurity scattering. Photoluminescence data shows that the main Eu3 + transition changes from 5D0 → 7F2 (related to ions located at asymmetric sites such as boundary layer) to 5D0 → 7F1 (related to ions located at symmetric sites), as the annealing temperature is increased.
id UNSP_c4f867ee002fba218900b1e8dd21ea1f
oai_identifier_str oai:repositorio.unesp.br:11449/168732
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2Electrical propertiesGallium arsenideHeterojunctionPhotoluminescenceTin dioxideGaAs/SnO2:2%Eu heterojunctions are deposited by resistive evaporation and sol-gel-dip-coating techniques respectively, with the top layer thermally annealed at different temperatures. The sample annealed at 200 °C/1 h has a much higher conductivity and a lower deepest level (79 meV) than the sample annealed at 400 °C/20 min, for which the deepest level value is 98 meV. The decay of photo-induced current at room temperature for these heterojunctions shows a decay of 48.8% from the initial value for a sample annealed at 200 °C/1 h, compared to a decay of 54.2% from the initial value for a sample treated at 400 °C/20 min. The excitation source has a broad band with energy lower than 1.65 eV, assuring that no electron-hole pair is generated in the SnO2 (top) layer. The data fitting seems to indicate that, although the grain boundary scattering dominates the mobility, the inclusion of time dependent terms is needed, such as multi-center capture or ionized impurity scattering. Photoluminescence data shows that the main Eu3 + transition changes from 5D0 → 7F2 (related to ions located at asymmetric sites such as boundary layer) to 5D0 → 7F1 (related to ions located at symmetric sites), as the annealing temperature is increased.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)UNESP-São Paulo State University Dept. Physics-FC and POSMAT Post-graduate Program in Materials Science and TechnologyUNESP-São Paulo State University Dept. Physics-FC and POSMAT Post-graduate Program in Materials Science and TechnologyUniversidade Estadual Paulista (Unesp)De Freitas Bueno, Cristina [UNESP]De Andrade Scalvi, Luis Vicente [UNESP]2018-12-11T16:42:46Z2018-12-11T16:42:46Z2016-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article303-309application/pdfhttp://dx.doi.org/10.1016/j.tsf.2016.06.008Thin Solid Films, v. 612, p. 303-309.0040-6090http://hdl.handle.net/11449/16873210.1016/j.tsf.2016.06.0082-s2.0-849750808842-s2.0-84975080884.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengThin Solid Films0,617info:eu-repo/semantics/openAccess2023-11-02T06:06:06Zoai:repositorio.unesp.br:11449/168732Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:40:11.193111Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
title On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
spellingShingle On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
De Freitas Bueno, Cristina [UNESP]
Electrical properties
Gallium arsenide
Heterojunction
Photoluminescence
Tin dioxide
title_short On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
title_full On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
title_fullStr On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
title_full_unstemmed On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
title_sort On the electrical properties of distinct Eu3 + emission centers in the heterojunction GaAs/SnO2
author De Freitas Bueno, Cristina [UNESP]
author_facet De Freitas Bueno, Cristina [UNESP]
De Andrade Scalvi, Luis Vicente [UNESP]
author_role author
author2 De Andrade Scalvi, Luis Vicente [UNESP]
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv De Freitas Bueno, Cristina [UNESP]
De Andrade Scalvi, Luis Vicente [UNESP]
dc.subject.por.fl_str_mv Electrical properties
Gallium arsenide
Heterojunction
Photoluminescence
Tin dioxide
topic Electrical properties
Gallium arsenide
Heterojunction
Photoluminescence
Tin dioxide
description GaAs/SnO2:2%Eu heterojunctions are deposited by resistive evaporation and sol-gel-dip-coating techniques respectively, with the top layer thermally annealed at different temperatures. The sample annealed at 200 °C/1 h has a much higher conductivity and a lower deepest level (79 meV) than the sample annealed at 400 °C/20 min, for which the deepest level value is 98 meV. The decay of photo-induced current at room temperature for these heterojunctions shows a decay of 48.8% from the initial value for a sample annealed at 200 °C/1 h, compared to a decay of 54.2% from the initial value for a sample treated at 400 °C/20 min. The excitation source has a broad band with energy lower than 1.65 eV, assuring that no electron-hole pair is generated in the SnO2 (top) layer. The data fitting seems to indicate that, although the grain boundary scattering dominates the mobility, the inclusion of time dependent terms is needed, such as multi-center capture or ionized impurity scattering. Photoluminescence data shows that the main Eu3 + transition changes from 5D0 → 7F2 (related to ions located at asymmetric sites such as boundary layer) to 5D0 → 7F1 (related to ions located at symmetric sites), as the annealing temperature is increased.
publishDate 2016
dc.date.none.fl_str_mv 2016-08-01
2018-12-11T16:42:46Z
2018-12-11T16:42:46Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.tsf.2016.06.008
Thin Solid Films, v. 612, p. 303-309.
0040-6090
http://hdl.handle.net/11449/168732
10.1016/j.tsf.2016.06.008
2-s2.0-84975080884
2-s2.0-84975080884.pdf
url http://dx.doi.org/10.1016/j.tsf.2016.06.008
http://hdl.handle.net/11449/168732
identifier_str_mv Thin Solid Films, v. 612, p. 303-309.
0040-6090
10.1016/j.tsf.2016.06.008
2-s2.0-84975080884
2-s2.0-84975080884.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Thin Solid Films
0,617
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 303-309
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128685524385792