Signal to noise ratio in nanoscale bioFETs
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2022 |
| Outros Autores: | , , , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UNESP |
| Texto Completo: | http://dx.doi.org/10.1016/j.sse.2022.108358 http://hdl.handle.net/11449/240006 |
Resumo: | We experimentally demonstrate the use of electrolytically gated SOI pFinFETs employed as bioFETs for the detection of single-stranded DNA and evaluate their low-frequency noise in the range between 1 Hz and 100 Hz. Both channel length and overdrive voltage dependencies are analyzed, showing the best (i.e., highest) signal to noise ratio for the devices with their gates biased around the threshold voltage, with little to no dependence on the channel length. |
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Signal to noise ratio in nanoscale bioFETs1/f noiseBioFETFinFETISFETWe experimentally demonstrate the use of electrolytically gated SOI pFinFETs employed as bioFETs for the detection of single-stranded DNA and evaluate their low-frequency noise in the range between 1 Hz and 100 Hz. Both channel length and overdrive voltage dependencies are analyzed, showing the best (i.e., highest) signal to noise ratio for the devices with their gates biased around the threshold voltage, with little to no dependence on the channel length.LSI/PSI/USP University of Sao PauloimecKU LeuvenUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)imecKU LeuvenUniversidade Estadual Paulista (UNESP)Mori, Carlos Augusto BergfeldMartens, KoenSimoen, EddyVan Dorpe, PolAgopian, Paula Ghedini Der [UNESP]Martino, João Antonio2023-03-01T19:57:16Z2023-03-01T19:57:16Z2022-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.sse.2022.108358Solid-State Electronics, v. 194.0038-1101http://hdl.handle.net/11449/24000610.1016/j.sse.2022.1083582-s2.0-85129565421Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSolid-State Electronicsinfo:eu-repo/semantics/openAccess2023-03-01T19:57:16Zoai:repositorio.unesp.br:11449/240006Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-03-01T19:57:16Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
| dc.title.none.fl_str_mv |
Signal to noise ratio in nanoscale bioFETs |
| title |
Signal to noise ratio in nanoscale bioFETs |
| spellingShingle |
Signal to noise ratio in nanoscale bioFETs Mori, Carlos Augusto Bergfeld 1/f noise BioFET FinFET ISFET |
| title_short |
Signal to noise ratio in nanoscale bioFETs |
| title_full |
Signal to noise ratio in nanoscale bioFETs |
| title_fullStr |
Signal to noise ratio in nanoscale bioFETs |
| title_full_unstemmed |
Signal to noise ratio in nanoscale bioFETs |
| title_sort |
Signal to noise ratio in nanoscale bioFETs |
| author |
Mori, Carlos Augusto Bergfeld |
| author_facet |
Mori, Carlos Augusto Bergfeld Martens, Koen Simoen, Eddy Van Dorpe, Pol Agopian, Paula Ghedini Der [UNESP] Martino, João Antonio |
| author_role |
author |
| author2 |
Martens, Koen Simoen, Eddy Van Dorpe, Pol Agopian, Paula Ghedini Der [UNESP] Martino, João Antonio |
| author2_role |
author author author author author |
| dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) imec KU Leuven Universidade Estadual Paulista (UNESP) |
| dc.contributor.author.fl_str_mv |
Mori, Carlos Augusto Bergfeld Martens, Koen Simoen, Eddy Van Dorpe, Pol Agopian, Paula Ghedini Der [UNESP] Martino, João Antonio |
| dc.subject.por.fl_str_mv |
1/f noise BioFET FinFET ISFET |
| topic |
1/f noise BioFET FinFET ISFET |
| description |
We experimentally demonstrate the use of electrolytically gated SOI pFinFETs employed as bioFETs for the detection of single-stranded DNA and evaluate their low-frequency noise in the range between 1 Hz and 100 Hz. Both channel length and overdrive voltage dependencies are analyzed, showing the best (i.e., highest) signal to noise ratio for the devices with their gates biased around the threshold voltage, with little to no dependence on the channel length. |
| publishDate |
2022 |
| dc.date.none.fl_str_mv |
2022-08-01 2023-03-01T19:57:16Z 2023-03-01T19:57:16Z |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.sse.2022.108358 Solid-State Electronics, v. 194. 0038-1101 http://hdl.handle.net/11449/240006 10.1016/j.sse.2022.108358 2-s2.0-85129565421 |
| url |
http://dx.doi.org/10.1016/j.sse.2022.108358 http://hdl.handle.net/11449/240006 |
| identifier_str_mv |
Solid-State Electronics, v. 194. 0038-1101 10.1016/j.sse.2022.108358 2-s2.0-85129565421 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
Solid-State Electronics |
| dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
| instname_str |
Universidade Estadual Paulista (UNESP) |
| instacron_str |
UNESP |
| institution |
UNESP |
| reponame_str |
Repositório Institucional da UNESP |
| collection |
Repositório Institucional da UNESP |
| repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
| repository.mail.fl_str_mv |
|
| _version_ |
1799964920405557248 |