Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs

Detalhes bibliográficos
Autor(a) principal: Goncalves, G. V.
Data de Publicação: 2018
Outros Autores: Oliveira, A. V., Agopian, P. G. D. [UNESP], Martino, J. A., Witters, L., Mitard, J., Collaert, N., Claeys, C., Simoen, E., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/184137
Resumo: In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been utilized. There are two main process parameters varied in the numerical simulations: a different ground plane peak doping concentration and the distance between the bottom part of the fin and the ground plane. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, for the studied ground plane doping concentration range. Additionally, the slope of the curve of the threshold voltage as a function of channel width varies from 250 mu V/nm till around 700 mu V/nm.
id UNSP_1a90649945004f105cec6675633d059d
oai_identifier_str oai:repositorio.unesp.br:11449/184137
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETsFinFETgermaniump-typeSTI lastIn this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been utilized. There are two main process parameters varied in the numerical simulations: a different ground plane peak doping concentration and the distance between the bottom part of the fin and the ground plane. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, for the studied ground plane doping concentration range. Additionally, the slope of the curve of the threshold voltage as a function of channel width varies from 250 mu V/nm till around 700 mu V/nm.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)FWOUniv Sao Paulo, PSI, LSI, Sao Paulo, BrazilUTFPR, Campus Toledo, BrazilIMEC, Leuven, BelgiumUNESP, Sao Joao Da Boa Vista, BrazilKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)UTFPRIMECUniversidade Estadual Paulista (Unesp)Katholieke Univ LeuvenGoncalves, G. V.Oliveira, A. V.Agopian, P. G. D. [UNESP]Martino, J. A.Witters, L.Mitard, J.Collaert, N.Claeys, C.Simoen, E.IEEE2019-10-03T18:20:10Z2019-10-03T18:20:10Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.http://hdl.handle.net/11449/184137WOS:00045119580002804969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro)info:eu-repo/semantics/openAccess2021-10-22T18:20:38Zoai:repositorio.unesp.br:11449/184137Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:08:38.391704Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
title Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
spellingShingle Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
Goncalves, G. V.
FinFET
germanium
p-type
STI last
title_short Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
title_full Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
title_fullStr Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
title_full_unstemmed Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
title_sort Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
author Goncalves, G. V.
author_facet Goncalves, G. V.
Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Witters, L.
Mitard, J.
Collaert, N.
Claeys, C.
Simoen, E.
IEEE
author_role author
author2 Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Witters, L.
Mitard, J.
Collaert, N.
Claeys, C.
Simoen, E.
IEEE
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
UTFPR
IMEC
Universidade Estadual Paulista (Unesp)
Katholieke Univ Leuven
dc.contributor.author.fl_str_mv Goncalves, G. V.
Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Witters, L.
Mitard, J.
Collaert, N.
Claeys, C.
Simoen, E.
IEEE
dc.subject.por.fl_str_mv FinFET
germanium
p-type
STI last
topic FinFET
germanium
p-type
STI last
description In this paper the Ground Plane (GP) influence on the threshold voltage of Ge pFinFET devices is investigated. In order to explain the experimental threshold voltage variation with fin width, TCAD simulations have been utilized. There are two main process parameters varied in the numerical simulations: a different ground plane peak doping concentration and the distance between the bottom part of the fin and the ground plane. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, for the studied ground plane doping concentration range. Additionally, the slope of the curve of the threshold voltage as a function of channel width varies from 250 mu V/nm till around 700 mu V/nm.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
2019-10-03T18:20:10Z
2019-10-03T18:20:10Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.
http://hdl.handle.net/11449/184137
WOS:000451195800028
0496909595465696
0000-0002-0886-7798
identifier_str_mv 2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2018.
WOS:000451195800028
0496909595465696
0000-0002-0886-7798
url http://hdl.handle.net/11449/184137
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2018 33rd Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129024983040000

Registros relacionados