Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

• Autor(a) principal: Agopian, Paula Ghedini Der [UNESP]
• Data de Publicação: 2017
• Outros Autores: Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1016/j.sse.2016.10.021; http://hdl.handle.net/11449/169278
• topic: Different device architectures; Intrinsic voltage gain; Line-TFET

In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV). Although the Line-TFETs present worse AV than the point-TFETs, when they are compared with MOSFET technology, the line-TFET shows a much better intrinsic voltage gain than both MOSFET architectures (FinFET and GAA). Besides the AV, the highest on-state current was obtained for Line-TFETs when compared with other two TFET architectures, which leads to a good compromise for analog application.