Influence of proton radiation and strain on nFinFET zero temperature coefficient
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/SBMicro.2016.7731362 http://hdl.handle.net/11449/169290 |
Resumo: | This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (VTH) due to the bandgap reduction. Proton radiation degrades gm and decreases VTH mainly for wider fins. We observed experimentally that both parameters (gm and VTH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The VTH influences directly the VZTC in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of VZTC with temperature. |
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Repositório Institucional da UNESP |
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Influence of proton radiation and strain on nFinFET zero temperature coefficientFinFETradiationSOIstrainZero Temperature CoefficientThis paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (VTH) due to the bandgap reduction. Proton radiation degrades gm and decreases VTH mainly for wider fins. We observed experimentally that both parameters (gm and VTH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The VTH influences directly the VZTC in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of VZTC with temperature.LSI/PSI/USP University of Sao PauloUNESP Univ. Estadual PaulistaImecE.E. Dept. KU LeuvenUNESP Univ. Estadual PaulistaUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)ImecKU LeuvenNascimento, Vinicius M.Agopian, Paula G.D. [UNESP]Almeida, Luciano M.Bordallo, Caio C.M.Simoen, EddyClaeys, CorMartino, Joao A.2018-12-11T16:45:14Z2018-12-11T16:45:14Z2016-11-02info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2016.7731362SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.http://hdl.handle.net/11449/16929010.1109/SBMicro.2016.77313622-s2.0-8500733283804969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Foruminfo:eu-repo/semantics/openAccess2021-10-23T21:47:16Zoai:repositorio.unesp.br:11449/169290Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:10:08.934664Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
title |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
spellingShingle |
Influence of proton radiation and strain on nFinFET zero temperature coefficient Nascimento, Vinicius M. FinFET radiation SOI strain Zero Temperature Coefficient |
title_short |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
title_full |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
title_fullStr |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
title_full_unstemmed |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
title_sort |
Influence of proton radiation and strain on nFinFET zero temperature coefficient |
author |
Nascimento, Vinicius M. |
author_facet |
Nascimento, Vinicius M. Agopian, Paula G.D. [UNESP] Almeida, Luciano M. Bordallo, Caio C.M. Simoen, Eddy Claeys, Cor Martino, Joao A. |
author_role |
author |
author2 |
Agopian, Paula G.D. [UNESP] Almeida, Luciano M. Bordallo, Caio C.M. Simoen, Eddy Claeys, Cor Martino, Joao A. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) Imec KU Leuven |
dc.contributor.author.fl_str_mv |
Nascimento, Vinicius M. Agopian, Paula G.D. [UNESP] Almeida, Luciano M. Bordallo, Caio C.M. Simoen, Eddy Claeys, Cor Martino, Joao A. |
dc.subject.por.fl_str_mv |
FinFET radiation SOI strain Zero Temperature Coefficient |
topic |
FinFET radiation SOI strain Zero Temperature Coefficient |
description |
This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (VTH) due to the bandgap reduction. Proton radiation degrades gm and decreases VTH mainly for wider fins. We observed experimentally that both parameters (gm and VTH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The VTH influences directly the VZTC in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of VZTC with temperature. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-11-02 2018-12-11T16:45:14Z 2018-12-11T16:45:14Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/SBMicro.2016.7731362 SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum. http://hdl.handle.net/11449/169290 10.1109/SBMicro.2016.7731362 2-s2.0-85007332838 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1109/SBMicro.2016.7731362 http://hdl.handle.net/11449/169290 |
identifier_str_mv |
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum. 10.1109/SBMicro.2016.7731362 2-s2.0-85007332838 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128903631339520 |