Synthesis of Transparent Semiconducting Metal-oxides via Polymeric Precursor Route for Application in Thin-film Field-Effect Transistors

• Autor(a) principal: Amorim, Cleber A. [UNESP]
• Data de Publicação: 2016
• Outros Autores: Gozzi, Giovani [UNESP], Chinaglia, Dante L. [UNESP], Dos Santos, Francisco José [UNESP], Santos, Lucas Fugikawa [UNESP]
• Tipo de documento: Artigo de conferência
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1557/adv.2016.224; http://hdl.handle.net/11449/179551
• topic: differential thermal analysis (DTA); electrical properties; thin film

Solution-processed zinc oxide (ZnO) thin-film transistors (TFTs) obtained via hydrolysis/pyrolysis of an organic precursor present an excellent technique to obtain high performance electronic devices with low manufacturing cost. In the current work, we propose the use of an alternative deposition method, based on a polymeric precursor route (known as Pechini), to obtain solution-processed ZnO compact films as the active layer of TFTs. The elimination of the organic phase and the formation of inorganic thin-films was carried out by thermal treatment at different temperatures (ranging from 200°C to 500°C) and at different times (from 5 min to 2 hours), being monitored by UV-vis and infrared (IR) optical absorption spectroscopy. It was observed that, for temperatures above 400°C and treatment times superior to 30 min, the organic phase was completely eliminated, remaining only the inorganic (metal oxide) phase. The optical bandgap of the resulting ZnO films, determined from UV-vis absorption, is about 3.4 eV. The electrical characteristics (output and transfer curves) of the obtained devices demonstrate the feasibility of Pecchini method to build solution-processed metal oxide TFTs. The results for the electrical mobility of the majority charge-carriers (electrons) and for the threshold voltage were 0.39 cm2.V-1.s-1 and 0.45 V, respectively.