Detection of H2facilitated by ionic liquid gating of tungsten oxide films
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1116/6.0001405 http://hdl.handle.net/11449/222998 |
Resumo: | Molecular hydrogen (H2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in different atmospheres is an important issue. Here, we propose a hydrogen sensor based on ion-gated transistors exploiting the interface between tungsten oxide and ionic liquids. Two different approaches to gas sensors (metal oxide gas sensor and ionic liquid-based electrochemical sensor) are integrated in a single device. We demonstrate that ionic liquid gating enhances the effect of H2 on the tungsten oxide transistor channel. The transistor current response permits the detection of H2 in an O2-free environment with the device operating in room temperature. After H2 sensing, the initial properties of the tungsten oxide channel can be recovered by exposure to O2. |
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Repositório Institucional da UNESP |
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Detection of H2facilitated by ionic liquid gating of tungsten oxide filmsMolecular hydrogen (H2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in different atmospheres is an important issue. Here, we propose a hydrogen sensor based on ion-gated transistors exploiting the interface between tungsten oxide and ionic liquids. Two different approaches to gas sensors (metal oxide gas sensor and ionic liquid-based electrochemical sensor) are integrated in a single device. We demonstrate that ionic liquid gating enhances the effect of H2 on the tungsten oxide transistor channel. The transistor current response permits the detection of H2 in an O2-free environment with the device operating in room temperature. After H2 sensing, the initial properties of the tungsten oxide channel can be recovered by exposure to O2.Instituto de Química Universidade Federal de Goiás (UFG), Av. Esperança, s/n - Chácaras de Recreio Samambaia, GoiâniaDepartamento de Física Engenharia e Matemática São Paulo State University (UNESP), Rua Professor Degni, 55Département de Génie Physique Polytechnique Montréal, C.P. 6079, Succ. Centre-VilleDepartamento de Física Engenharia e Matemática São Paulo State University (UNESP), Rua Professor Degni, 55Universidade Federal de Goiás (UFG)Universidade Estadual Paulista (UNESP)Polytechnique MontréalBarbosa, Martin S. [UNESP]Da Silva, Ranilson A. [UNESP]Santato, ClaraOrlandi, Marcelo O. [UNESP]2022-04-28T19:47:56Z2022-04-28T19:47:56Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1116/6.0001405Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v. 40, n. 1, 2022.1520-85590734-2101http://hdl.handle.net/11449/22299810.1116/6.00014052-s2.0-85120733400Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsinfo:eu-repo/semantics/openAccess2022-04-28T19:47:56Zoai:repositorio.unesp.br:11449/222998Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-06T00:03:00.647632Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
title |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
spellingShingle |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films Barbosa, Martin S. [UNESP] |
title_short |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
title_full |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
title_fullStr |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
title_full_unstemmed |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
title_sort |
Detection of H2facilitated by ionic liquid gating of tungsten oxide films |
author |
Barbosa, Martin S. [UNESP] |
author_facet |
Barbosa, Martin S. [UNESP] Da Silva, Ranilson A. [UNESP] Santato, Clara Orlandi, Marcelo O. [UNESP] |
author_role |
author |
author2 |
Da Silva, Ranilson A. [UNESP] Santato, Clara Orlandi, Marcelo O. [UNESP] |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal de Goiás (UFG) Universidade Estadual Paulista (UNESP) Polytechnique Montréal |
dc.contributor.author.fl_str_mv |
Barbosa, Martin S. [UNESP] Da Silva, Ranilson A. [UNESP] Santato, Clara Orlandi, Marcelo O. [UNESP] |
description |
Molecular hydrogen (H2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in different atmospheres is an important issue. Here, we propose a hydrogen sensor based on ion-gated transistors exploiting the interface between tungsten oxide and ionic liquids. Two different approaches to gas sensors (metal oxide gas sensor and ionic liquid-based electrochemical sensor) are integrated in a single device. We demonstrate that ionic liquid gating enhances the effect of H2 on the tungsten oxide transistor channel. The transistor current response permits the detection of H2 in an O2-free environment with the device operating in room temperature. After H2 sensing, the initial properties of the tungsten oxide channel can be recovered by exposure to O2. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-04-28T19:47:56Z 2022-04-28T19:47:56Z 2022-01-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1116/6.0001405 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v. 40, n. 1, 2022. 1520-8559 0734-2101 http://hdl.handle.net/11449/222998 10.1116/6.0001405 2-s2.0-85120733400 |
url |
http://dx.doi.org/10.1116/6.0001405 http://hdl.handle.net/11449/222998 |
identifier_str_mv |
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v. 40, n. 1, 2022. 1520-8559 0734-2101 10.1116/6.0001405 2-s2.0-85120733400 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129576805597184 |