Ordered vacancy compounds: the case of the Mangéli phases of TiO2

Detalhes bibliográficos
Autor(a) principal: Michejevs Padilha, Antonio Claudio
Data de Publicação: 2022
Outros Autores: Rocha, Alexandre Reily [UNESP], Dalpian, Gustavo Martini
Tipo de documento: Capítulo de livro
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/B978-0-323-85588-4.00014-3
http://hdl.handle.net/11449/248517
Resumo: Defects typically appear in materials in very limited quantities, usually of the order of 1016-1019/cm3. In some cases, however, these defects can be observed in a much larger concentration, enough to change the stoichiometry of the parent compound and even change their crystal structure. An important class of these materials is the ordered vacancy compounds, first proposed for CdIn2Se4. Other compounds, such as hybrid perovskites, can also present ordered vacancy compounds, such as Cs2SnI6, derived from CsSnI3. In this chapter, we will discuss ordered vacancy compounds derived from the transition metal oxide compound TiO2. These are known as the Magnéli phases of TiO2 and can be constructed by removing oxygen atoms from the host lattice. There are several different polymorphs that can be created by changing the quantity of oxygen vacancies, including Ti2O3, Ti3O5, and Ti4O7 (based on the formula Ti n O2n−1). We will discuss the structural determination of these materials that can be created by sliding planes from the rutile TiO2 structure. Also, the electronic structure of these compounds is characteristic of intermediate band materials and can be directly correlated to the properties of oxygen vacancies in TiO2. Lastly, we will discuss the potential applications of this kind of materials that can include memristors and batteries.
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spelling Ordered vacancy compounds: the case of the Mangéli phases of TiO2Computational simulationDensity functional theoryDFTMagnéli phasesMemristive devicesMemristorTitanium oxideDefects typically appear in materials in very limited quantities, usually of the order of 1016-1019/cm3. In some cases, however, these defects can be observed in a much larger concentration, enough to change the stoichiometry of the parent compound and even change their crystal structure. An important class of these materials is the ordered vacancy compounds, first proposed for CdIn2Se4. Other compounds, such as hybrid perovskites, can also present ordered vacancy compounds, such as Cs2SnI6, derived from CsSnI3. In this chapter, we will discuss ordered vacancy compounds derived from the transition metal oxide compound TiO2. These are known as the Magnéli phases of TiO2 and can be constructed by removing oxygen atoms from the host lattice. There are several different polymorphs that can be created by changing the quantity of oxygen vacancies, including Ti2O3, Ti3O5, and Ti4O7 (based on the formula Ti n O2n−1). We will discuss the structural determination of these materials that can be created by sliding planes from the rutile TiO2 structure. Also, the electronic structure of these compounds is characteristic of intermediate band materials and can be directly correlated to the properties of oxygen vacancies in TiO2. Lastly, we will discuss the potential applications of this kind of materials that can include memristors and batteries.Flextronics Research Institute, SPInstituto de Física Teórica São Paulo State University, SPFederal University of ABC (UFABC), SPInstituto de Física Teórica São Paulo State University, SPFlextronics Research InstituteUniversidade Estadual Paulista (UNESP)Universidade Federal do ABC (UFABC)Michejevs Padilha, Antonio ClaudioRocha, Alexandre Reily [UNESP]Dalpian, Gustavo Martini2023-07-29T13:46:08Z2023-07-29T13:46:08Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/bookPart533-565http://dx.doi.org/10.1016/B978-0-323-85588-4.00014-3Metal Oxide Defects: Fundamentals, Design, Development and Applications, p. 533-565.http://hdl.handle.net/11449/24851710.1016/B978-0-323-85588-4.00014-32-s2.0-85150098690Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMetal Oxide Defects: Fundamentals, Design, Development and Applicationsinfo:eu-repo/semantics/openAccess2023-07-29T13:46:08Zoai:repositorio.unesp.br:11449/248517Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-07-29T13:46:08Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Ordered vacancy compounds: the case of the Mangéli phases of TiO2
title Ordered vacancy compounds: the case of the Mangéli phases of TiO2
spellingShingle Ordered vacancy compounds: the case of the Mangéli phases of TiO2
Michejevs Padilha, Antonio Claudio
Computational simulation
Density functional theory
DFT
Magnéli phases
Memristive devices
Memristor
Titanium oxide
title_short Ordered vacancy compounds: the case of the Mangéli phases of TiO2
title_full Ordered vacancy compounds: the case of the Mangéli phases of TiO2
title_fullStr Ordered vacancy compounds: the case of the Mangéli phases of TiO2
title_full_unstemmed Ordered vacancy compounds: the case of the Mangéli phases of TiO2
title_sort Ordered vacancy compounds: the case of the Mangéli phases of TiO2
author Michejevs Padilha, Antonio Claudio
author_facet Michejevs Padilha, Antonio Claudio
Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo Martini
author_role author
author2 Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo Martini
author2_role author
author
dc.contributor.none.fl_str_mv Flextronics Research Institute
Universidade Estadual Paulista (UNESP)
Universidade Federal do ABC (UFABC)
dc.contributor.author.fl_str_mv Michejevs Padilha, Antonio Claudio
Rocha, Alexandre Reily [UNESP]
Dalpian, Gustavo Martini
dc.subject.por.fl_str_mv Computational simulation
Density functional theory
DFT
Magnéli phases
Memristive devices
Memristor
Titanium oxide
topic Computational simulation
Density functional theory
DFT
Magnéli phases
Memristive devices
Memristor
Titanium oxide
description Defects typically appear in materials in very limited quantities, usually of the order of 1016-1019/cm3. In some cases, however, these defects can be observed in a much larger concentration, enough to change the stoichiometry of the parent compound and even change their crystal structure. An important class of these materials is the ordered vacancy compounds, first proposed for CdIn2Se4. Other compounds, such as hybrid perovskites, can also present ordered vacancy compounds, such as Cs2SnI6, derived from CsSnI3. In this chapter, we will discuss ordered vacancy compounds derived from the transition metal oxide compound TiO2. These are known as the Magnéli phases of TiO2 and can be constructed by removing oxygen atoms from the host lattice. There are several different polymorphs that can be created by changing the quantity of oxygen vacancies, including Ti2O3, Ti3O5, and Ti4O7 (based on the formula Ti n O2n−1). We will discuss the structural determination of these materials that can be created by sliding planes from the rutile TiO2 structure. Also, the electronic structure of these compounds is characteristic of intermediate band materials and can be directly correlated to the properties of oxygen vacancies in TiO2. Lastly, we will discuss the potential applications of this kind of materials that can include memristors and batteries.
publishDate 2022
dc.date.none.fl_str_mv 2022-01-01
2023-07-29T13:46:08Z
2023-07-29T13:46:08Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/bookPart
format bookPart
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/B978-0-323-85588-4.00014-3
Metal Oxide Defects: Fundamentals, Design, Development and Applications, p. 533-565.
http://hdl.handle.net/11449/248517
10.1016/B978-0-323-85588-4.00014-3
2-s2.0-85150098690
url http://dx.doi.org/10.1016/B978-0-323-85588-4.00014-3
http://hdl.handle.net/11449/248517
identifier_str_mv Metal Oxide Defects: Fundamentals, Design, Development and Applications, p. 533-565.
10.1016/B978-0-323-85588-4.00014-3
2-s2.0-85150098690
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Metal Oxide Defects: Fundamentals, Design, Development and Applications
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 533-565
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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