Effects of varying curvature and width on the electronic states of GaAs quantum rings

Detalhes bibliográficos
Autor(a) principal: Bruno-Alfonso, A. [UNESP]
Data de Publicação: 2006
Outros Autores: Oliveira, T. A. de [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
DOI: 10.1590/S0103-97332006000300054
Texto Completo: http://dx.doi.org/10.1590/S0103-97332006000300054
http://hdl.handle.net/11449/29751
Resumo: Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the effective-mass approximation. The width of the ring varies smoothly along the centerline, which is an ellipse. The solutions of the Schrödinger equation with Dirichlet boundary conditions are approximated by a product of longitudinal and transversal wave functions. The ground-state probability density shows peaks: (i) where the curvature is larger in a constant-with ring, and (ii) in thicker parts of a circular ring. For rings of typical dimensions, it is shown that the effects of a varying width may be stronger than those of the varying curvature. Also, a width profile which compensates the main localization effects of the varying curvature is obtained.
id UNSP_f1c0048d2385c67101d7a41bd2357521
oai_identifier_str oai:repositorio.unesp.br:11449/29751
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Effects of varying curvature and width on the electronic states of GaAs quantum ringsElectronic statesGaAs elliptical quantum ringsEffective-mass approximationStationary states of an electron in thin GaAs elliptical quantum rings are calculated within the effective-mass approximation. The width of the ring varies smoothly along the centerline, which is an ellipse. The solutions of the Schrödinger equation with Dirichlet boundary conditions are approximated by a product of longitudinal and transversal wave functions. The ground-state probability density shows peaks: (i) where the curvature is larger in a constant-with ring, and (ii) in thicker parts of a circular ring. For rings of typical dimensions, it is shown that the effects of a varying width may be stronger than those of the varying curvature. Also, a width profile which compensates the main localization effects of the varying curvature is obtained.Universidade Estadual Paulista Faculdade de Ciências Departamento de MatemáticaUniversidade Estadual Paulista Faculdade de Ciências Departamento de MatemáticaSociedade Brasileira de FísicaUniversidade Estadual Paulista (Unesp)Bruno-Alfonso, A. [UNESP]Oliveira, T. A. de [UNESP]2014-05-20T15:15:43Z2014-05-20T15:15:43Z2006-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article434-437application/pdfhttp://dx.doi.org/10.1590/S0103-97332006000300054Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 2a, p. 434-437, 2006.0103-9733http://hdl.handle.net/11449/2975110.1590/S0103-97332006000300054S0103-97332006000300054S0103-97332006000300054.pdfSciELOreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengBrazilian Journal of Physics1.0820,276info:eu-repo/semantics/openAccess2024-04-29T14:59:31Zoai:repositorio.unesp.br:11449/29751Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:58:58.761540Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Effects of varying curvature and width on the electronic states of GaAs quantum rings
title Effects of varying curvature and width on the electronic states of GaAs quantum rings
spellingShingle Effects of varying curvature and width on the electronic states of GaAs quantum rings
Effects of varying curvature and width on the electronic states of GaAs quantum rings
Bruno-Alfonso, A. [UNESP]
Electronic states
GaAs elliptical quantum rings
Effective-mass approximation
Bruno-Alfonso, A. [UNESP]
Electronic states
GaAs elliptical quantum rings
Effective-mass approximation
title_short Effects of varying curvature and width on the electronic states of GaAs quantum rings
title_full Effects of varying curvature and width on the electronic states of GaAs quantum rings
title_fullStr Effects of varying curvature and width on the electronic states of GaAs quantum rings
Effects of varying curvature and width on the electronic states of GaAs quantum rings
title_full_unstemmed Effects of varying curvature and width on the electronic states of GaAs quantum rings
Effects of varying curvature and width on the electronic states of GaAs quantum rings
title_sort Effects of varying curvature and width on the electronic states of GaAs quantum rings
author Bruno-Alfonso, A. [UNESP]
author_facet Bruno-Alfonso, A. [UNESP]
Bruno-Alfonso, A. [UNESP]
Oliveira, T. A. de [UNESP]
Oliveira, T. A. de [UNESP]
author_role author
author2 Oliveira, T. A. de [UNESP]
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Bruno-Alfonso, A. [UNESP]
Oliveira, T. A. de [UNESP]
dc.subject.por.fl_str_mv Electronic states
GaAs elliptical quantum rings
Effective-mass approximation
topic Electronic states
GaAs elliptical quantum rings
Effective-mass approximation
description Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the effective-mass approximation. The width of the ring varies smoothly along the centerline, which is an ellipse. The solutions of the Schrödinger equation with Dirichlet boundary conditions are approximated by a product of longitudinal and transversal wave functions. The ground-state probability density shows peaks: (i) where the curvature is larger in a constant-with ring, and (ii) in thicker parts of a circular ring. For rings of typical dimensions, it is shown that the effects of a varying width may be stronger than those of the varying curvature. Also, a width profile which compensates the main localization effects of the varying curvature is obtained.
publishDate 2006
dc.date.none.fl_str_mv 2006-06-01
2014-05-20T15:15:43Z
2014-05-20T15:15:43Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1590/S0103-97332006000300054
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 2a, p. 434-437, 2006.
0103-9733
http://hdl.handle.net/11449/29751
10.1590/S0103-97332006000300054
S0103-97332006000300054
S0103-97332006000300054.pdf
url http://dx.doi.org/10.1590/S0103-97332006000300054
http://hdl.handle.net/11449/29751
identifier_str_mv Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 2a, p. 434-437, 2006.
0103-9733
10.1590/S0103-97332006000300054
S0103-97332006000300054
S0103-97332006000300054.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Brazilian Journal of Physics
1.082
0,276
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 434-437
application/pdf
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv SciELO
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1822182417935368192
dc.identifier.doi.none.fl_str_mv 10.1590/S0103-97332006000300054