Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/S0040-6090(02)00756-3 http://hdl.handle.net/11449/230926 |
Resumo: | The deposition, structure and mechanical properties of hydrogenated amorphous carbon films grown in highly Ar-diluted CH4 atmospheres were investigated for a total pressure of 13 Pa. Films were investigated as a function of the self-bias voltage between -50 and -500 V for two extreme CH4 partial pressures, 2 and 100%. For the self-bias voltage that optimizes the diamond-like properties of the films, -350 V, we carried out an investigation as a function of the Ar partial pressure, which ranged from 0 to 99%. The deposition rate and the hydrogen content decreased with progressive Ar dilution. The density and the compressive internal stress are nearly constant. The hardness decreased for Ar-rich precursor atmospheres. The surface roughness was independent of the CH4 partial pressure. © 2002 Elsevier Science B.V. All rights reserved. |
id |
UNSP_f4173508e0da7163e9fb63c5e5d66123 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/230926 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in ArAmorphous hydrogenated carbonMethaneNoble gasesPlasma enhanced CVDThe deposition, structure and mechanical properties of hydrogenated amorphous carbon films grown in highly Ar-diluted CH4 atmospheres were investigated for a total pressure of 13 Pa. Films were investigated as a function of the self-bias voltage between -50 and -500 V for two extreme CH4 partial pressures, 2 and 100%. For the self-bias voltage that optimizes the diamond-like properties of the films, -350 V, we carried out an investigation as a function of the Ar partial pressure, which ranged from 0 to 99%. The deposition rate and the hydrogen content decreased with progressive Ar dilution. The density and the compressive internal stress are nearly constant. The hardness decreased for Ar-rich precursor atmospheres. The surface roughness was independent of the CH4 partial pressure. © 2002 Elsevier Science B.V. All rights reserved.Departamento De Física Pontificia Universidade Católica Do Rio De Janeiro, R. Marques de Sao Vicente, 225-Gavea, 22452-970 Rio de Janeiro, RJDepartamento De Física E Química Faculdade De Engenharia De Guaratinguetá, 12516-410 Guaratingueta, SPInstituto De Física De São Carlos Universidade De São Paulo, Caixa Postal 369, 13560-250 Sao Carlos, SPPontificia Universidade Católica Do Rio De JaneiroFaculdade De Engenharia De GuaratinguetáUniversidade de São Paulo (USP)Jacobsohn, L. G.Capote, G.Cruz, N. C.Zanatta, A. R.Freire, Jr.2022-04-29T08:42:47Z2022-04-29T08:42:47Z2002-11-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article46-53http://dx.doi.org/10.1016/S0040-6090(02)00756-3Thin Solid Films, v. 419, n. 1-2, p. 46-53, 2002.0040-6090http://hdl.handle.net/11449/23092610.1016/S0040-6090(02)00756-32-s2.0-0036849858Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengThin Solid Filmsinfo:eu-repo/semantics/openAccess2024-07-01T20:52:08Zoai:repositorio.unesp.br:11449/230926Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:26:04.135782Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
title |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
spellingShingle |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar Jacobsohn, L. G. Amorphous hydrogenated carbon Methane Noble gases Plasma enhanced CVD |
title_short |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
title_full |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
title_fullStr |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
title_full_unstemmed |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
title_sort |
Plasma deposition of amorphous carbon films from CH4 atmospheres highly diluted in Ar |
author |
Jacobsohn, L. G. |
author_facet |
Jacobsohn, L. G. Capote, G. Cruz, N. C. Zanatta, A. R. Freire, Jr. |
author_role |
author |
author2 |
Capote, G. Cruz, N. C. Zanatta, A. R. Freire, Jr. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Pontificia Universidade Católica Do Rio De Janeiro Faculdade De Engenharia De Guaratinguetá Universidade de São Paulo (USP) |
dc.contributor.author.fl_str_mv |
Jacobsohn, L. G. Capote, G. Cruz, N. C. Zanatta, A. R. Freire, Jr. |
dc.subject.por.fl_str_mv |
Amorphous hydrogenated carbon Methane Noble gases Plasma enhanced CVD |
topic |
Amorphous hydrogenated carbon Methane Noble gases Plasma enhanced CVD |
description |
The deposition, structure and mechanical properties of hydrogenated amorphous carbon films grown in highly Ar-diluted CH4 atmospheres were investigated for a total pressure of 13 Pa. Films were investigated as a function of the self-bias voltage between -50 and -500 V for two extreme CH4 partial pressures, 2 and 100%. For the self-bias voltage that optimizes the diamond-like properties of the films, -350 V, we carried out an investigation as a function of the Ar partial pressure, which ranged from 0 to 99%. The deposition rate and the hydrogen content decreased with progressive Ar dilution. The density and the compressive internal stress are nearly constant. The hardness decreased for Ar-rich precursor atmospheres. The surface roughness was independent of the CH4 partial pressure. © 2002 Elsevier Science B.V. All rights reserved. |
publishDate |
2002 |
dc.date.none.fl_str_mv |
2002-11-01 2022-04-29T08:42:47Z 2022-04-29T08:42:47Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/S0040-6090(02)00756-3 Thin Solid Films, v. 419, n. 1-2, p. 46-53, 2002. 0040-6090 http://hdl.handle.net/11449/230926 10.1016/S0040-6090(02)00756-3 2-s2.0-0036849858 |
url |
http://dx.doi.org/10.1016/S0040-6090(02)00756-3 http://hdl.handle.net/11449/230926 |
identifier_str_mv |
Thin Solid Films, v. 419, n. 1-2, p. 46-53, 2002. 0040-6090 10.1016/S0040-6090(02)00756-3 2-s2.0-0036849858 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Thin Solid Films |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
46-53 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128650796597248 |