Floating body effect on n-channel bulk FinFETs for memory application
Autor(a) principal: | |
---|---|
Data de Publicação: | 2014 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ICCDCS.2014.7016147 http://hdl.handle.net/11449/173495 |
Resumo: | In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor. |
id |
UNSP_f94eeb574e3b636d3749a79b07aa251c |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/173495 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Floating body effect on n-channel bulk FinFETs for memory applicationback biasBulkFinFETfloating body effectMemoryIn this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor.Campus de Sorocaba UNESP-Univ Estadual Paulista Automation and Integrated SystemsLSI University of Sao PauloImecE. E. Department KU LeuvenCampus de Sorocaba UNESP-Univ Estadual Paulista Automation and Integrated SystemsUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)ImecE. E. Department KU LeuvenAndrade, M. G.C. [UNESP]Almeida, L. M. [UNESP]Martino, J. A. [UNESP]Aoulaiche, M.Simoen, E.Claeys, C.2018-12-11T17:05:53Z2018-12-11T17:05:53Z2014-01-20info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/ICCDCS.2014.70161472014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings.http://hdl.handle.net/11449/17349510.1109/ICCDCS.2014.70161472-s2.0-84988299629Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedingsinfo:eu-repo/semantics/openAccess2021-10-23T21:47:02Zoai:repositorio.unesp.br:11449/173495Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:20:18.330365Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Floating body effect on n-channel bulk FinFETs for memory application |
title |
Floating body effect on n-channel bulk FinFETs for memory application |
spellingShingle |
Floating body effect on n-channel bulk FinFETs for memory application Andrade, M. G.C. [UNESP] back bias Bulk FinFET floating body effect Memory |
title_short |
Floating body effect on n-channel bulk FinFETs for memory application |
title_full |
Floating body effect on n-channel bulk FinFETs for memory application |
title_fullStr |
Floating body effect on n-channel bulk FinFETs for memory application |
title_full_unstemmed |
Floating body effect on n-channel bulk FinFETs for memory application |
title_sort |
Floating body effect on n-channel bulk FinFETs for memory application |
author |
Andrade, M. G.C. [UNESP] |
author_facet |
Andrade, M. G.C. [UNESP] Almeida, L. M. [UNESP] Martino, J. A. [UNESP] Aoulaiche, M. Simoen, E. Claeys, C. |
author_role |
author |
author2 |
Almeida, L. M. [UNESP] Martino, J. A. [UNESP] Aoulaiche, M. Simoen, E. Claeys, C. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) Imec E. E. Department KU Leuven |
dc.contributor.author.fl_str_mv |
Andrade, M. G.C. [UNESP] Almeida, L. M. [UNESP] Martino, J. A. [UNESP] Aoulaiche, M. Simoen, E. Claeys, C. |
dc.subject.por.fl_str_mv |
back bias Bulk FinFET floating body effect Memory |
topic |
back bias Bulk FinFET floating body effect Memory |
description |
In this paper, the floating body effect (FBE) is experimentally investigated on triple gate n-channel Bulk FinFETs for 1T-FBRAM (1 transistor Floating Body Dynamic Random Access Memory) application. A difference between the Direct Current (DC) and the Alternating Current (AC) measurements corresponding with the real memory operation is shown. The large hysteresis under DC measurement related to floating body effects is observed using AC measurement only when the bulk contact is floating. Moreover, it is shown that the stored holes are not in the fins but probably in the ground plane below the junctions. Furthermore, the floating body effect in the Bulk FinFET is observed when the latter is operated like a biristor, confirming the charge storage in the junction capacitor. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-01-20 2018-12-11T17:05:53Z 2018-12-11T17:05:53Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ICCDCS.2014.7016147 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings. http://hdl.handle.net/11449/173495 10.1109/ICCDCS.2014.7016147 2-s2.0-84988299629 |
url |
http://dx.doi.org/10.1109/ICCDCS.2014.7016147 http://hdl.handle.net/11449/173495 |
identifier_str_mv |
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings. 10.1109/ICCDCS.2014.7016147 2-s2.0-84988299629 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128635313324032 |