Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS

Detalhes bibliográficos
Autor(a) principal: Congiu, M. [UNESP]
Data de Publicação: 2016
Outros Autores: Albano, L. G.S. [UNESP], Nunes-Neto, O. [UNESP], Graeff, C. F.O. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1049/el.2016.2901
http://hdl.handle.net/11449/169055
Resumo: Hereby a novel thin film-based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu2-xS). CuS thin films were deposited using a fast, easy and low-temperature drop-casting technique. The devices shown memresistive characteristics, with well-defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space-charge-limited current and ionic diffusion.
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spelling Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xSHereby a novel thin film-based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu2-xS). CuS thin films were deposited using a fast, easy and low-temperature drop-casting technique. The devices shown memresistive characteristics, with well-defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space-charge-limited current and ionic diffusion.Department of POSMAT S�o Paulo State University - UNESPDepartment of POSMAT S�o Paulo State University - UNESPUniversidade Estadual Paulista (Unesp)Congiu, M. [UNESP]Albano, L. G.S. [UNESP]Nunes-Neto, O. [UNESP]Graeff, C. F.O. [UNESP]2018-12-11T16:44:09Z2018-12-11T16:44:09Z2016-10-27info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1871-1873http://dx.doi.org/10.1049/el.2016.2901Electronics Letters, v. 52, n. 22, p. 1871-1873, 2016.0013-5194http://hdl.handle.net/11449/16905510.1049/el.2016.29012-s2.0-84992220740Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengElectronics Letters0,407info:eu-repo/semantics/openAccess2021-10-23T16:51:56Zoai:repositorio.unesp.br:11449/169055Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:53:25.168152Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
title Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
spellingShingle Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
Congiu, M. [UNESP]
title_short Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
title_full Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
title_fullStr Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
title_full_unstemmed Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
title_sort Printable ReRAM devices based on the non-stoichiometric junction CuS/Cu2-xS
author Congiu, M. [UNESP]
author_facet Congiu, M. [UNESP]
Albano, L. G.S. [UNESP]
Nunes-Neto, O. [UNESP]
Graeff, C. F.O. [UNESP]
author_role author
author2 Albano, L. G.S. [UNESP]
Nunes-Neto, O. [UNESP]
Graeff, C. F.O. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Congiu, M. [UNESP]
Albano, L. G.S. [UNESP]
Nunes-Neto, O. [UNESP]
Graeff, C. F.O. [UNESP]
description Hereby a novel thin film-based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu2-xS). CuS thin films were deposited using a fast, easy and low-temperature drop-casting technique. The devices shown memresistive characteristics, with well-defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space-charge-limited current and ionic diffusion.
publishDate 2016
dc.date.none.fl_str_mv 2016-10-27
2018-12-11T16:44:09Z
2018-12-11T16:44:09Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1049/el.2016.2901
Electronics Letters, v. 52, n. 22, p. 1871-1873, 2016.
0013-5194
http://hdl.handle.net/11449/169055
10.1049/el.2016.2901
2-s2.0-84992220740
url http://dx.doi.org/10.1049/el.2016.2901
http://hdl.handle.net/11449/169055
identifier_str_mv Electronics Letters, v. 52, n. 22, p. 1871-1873, 2016.
0013-5194
10.1049/el.2016.2901
2-s2.0-84992220740
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Electronics Letters
0,407
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1871-1873
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129562168524800

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