New method for observing self-heating effect using transistor efficiency signature

Detalhes bibliográficos
Autor(a) principal: Mori, C. A. B.
Data de Publicação: 2017
Outros Autores: Agopian, P. G. D. [UNESP], Martino, J. A., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/186358
Resumo: This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through numerical simulations employing simple analytical models, and then applied experimentally. The transistor efficiencies of short and long channel pFinFETs were used for experimental observation of self-heating effects in this paper. It is possible to see if the self-heating is weak, moderate or strong through the signature format observed on gm/ID versus ID curve.
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spelling New method for observing self-heating effect using transistor efficiency signatureSelf-heating effect (SHE)SOIFinFETThis paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through numerical simulations employing simple analytical models, and then applied experimentally. The transistor efficiencies of short and long channel pFinFETs were used for experimental observation of self-heating effects in this paper. It is possible to see if the self-heating is weak, moderate or strong through the signature format observed on gm/ID versus ID curve.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Univ Sao Paulo, PSI, LSI, Sao Paulo, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, C. A. B.Agopian, P. G. D. [UNESP]Martino, J. A.IEEE2019-10-04T19:12:43Z2019-10-04T19:12:43Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject32017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.2573-5926http://hdl.handle.net/11449/186358WOS:000463041500089Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)info:eu-repo/semantics/openAccess2021-10-22T21:10:06Zoai:repositorio.unesp.br:11449/186358Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:51:08.238755Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv New method for observing self-heating effect using transistor efficiency signature
title New method for observing self-heating effect using transistor efficiency signature
spellingShingle New method for observing self-heating effect using transistor efficiency signature
Mori, C. A. B.
Self-heating effect (SHE)
SOI
FinFET
title_short New method for observing self-heating effect using transistor efficiency signature
title_full New method for observing self-heating effect using transistor efficiency signature
title_fullStr New method for observing self-heating effect using transistor efficiency signature
title_full_unstemmed New method for observing self-heating effect using transistor efficiency signature
title_sort New method for observing self-heating effect using transistor efficiency signature
author Mori, C. A. B.
author_facet Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author_role author
author2 Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
dc.subject.por.fl_str_mv Self-heating effect (SHE)
SOI
FinFET
topic Self-heating effect (SHE)
SOI
FinFET
description This paper reports a new method for observing the presence of self-heating effect through transistor efficiency (gm/ID) signature from DC measurements, for fast and accurate analysis. This new method is tested first through numerical simulations employing simple analytical models, and then applied experimentally. The transistor efficiencies of short and long channel pFinFETs were used for experimental observation of self-heating effects in this paper. It is possible to see if the self-heating is weak, moderate or strong through the signature format observed on gm/ID versus ID curve.
publishDate 2017
dc.date.none.fl_str_mv 2017-01-01
2019-10-04T19:12:43Z
2019-10-04T19:12:43Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.
2573-5926
http://hdl.handle.net/11449/186358
WOS:000463041500089
identifier_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.
2573-5926
WOS:000463041500089
url http://hdl.handle.net/11449/186358
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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