Density-functional theory for single-electron transistors

• Autor(a) principal: Zawadzki, Krissia de
• Data de Publicação: 2018
• Tipo de documento: Tese
• Idioma: eng
• Título da fonte: Biblioteca Digital de Teses e Dissertações da USP
• Texto Completo: http://www.teses.usp.br/teses/disponiveis/76/76131/tde-24102018-165237/
• topic: Density-functional theory; Efeito Kondo; Grupo de renormalização numérico; Kondo effect; Numerical renormalization-group; Single-electron transistor; Teoria do funcional da densidade; Transístor de um elétron

The study of transport in nano-structured devices and molecular junctions has become a topic of great interest with the recent call for quantum technologies. Most of our knowledge has been guided by experimental and theoretical studies of the single-electron transistor (SET), an elementary device constituted by a quantum dot coupled to two otherwise independent free electron gases. The SET is particularly interesting because its transport properties at low temperatures are governed by the Kondo effect. A methodological difficulty has nonetheless barred theoretical progress in describing accurately realistic devices. On the one hand, Density-Functional Theory (DFT), the most convenient tool to obtain the electronic structure of complex materials, yields only qualitatively descriptions of the low-temperature physical properties of quantum dot devices. On the other hand, a quantitative description of low-temperature transport properties of the SET, such that obtained through the solution of the Anderson model via exact methods, is nonetheless unable to account for realistic features of experimental devices, such as geometry, band structure and electron-electron interactions in the electron gases. DFT describes the electron gases very well, but proves inadequate to treat the electronic correlations introduced by the quantum dot. This thesis proposes a way out of this frustrating dilemma. Our contribution is founded on renormalization-group (RG) concepts. Specifically, we show that, under conditions of experimental interest, the high and low temperatures regimes of a SET corresponds to the weakly-coupling and strongly-coupling fixed points of the Anderson Hamiltonian. Based on an RG analysis, we argue that, at this low-temperature fixed point, the entanglement between impurity and gas-electron spins introduces non-local correlations that lie beyond the reach of local- or quasi-local-density approximations, hence rendering inadequate approximations for the exchange-correlation energy functional. By contrast, the weak-coupling fixed point is within the reach of local-density approximations. With a view to describing realistic properties of quantum dot devices, we therefore propose a hybrid self-consistent procedure that starts with the weak-coupling fixed point and takes advantage of a reliable numerical method to drive the Hamiltonian to the strong-coupling fixed point. Our approach employs traditional DFT to treat the weak-coupling system and the Numerical Renormalization-Group (NRG) method to obtain properties in the strongcoupling regime. As an illustration, we apply the procedure to a single-electron transistor modeled by a generalized one-dimensional Hubbard Hamiltonian. We analyze the thermal dependence of the conductance in the SET and discuss its behavior at low-temperatures, comparing our results with other self-consistent approaches and with experimental data.