Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000400016 |
Resumo: | Porous silicon layers (PSL) were produced by stain etching from a HF:HNO3 500:1 mixture with etching time varying in the range of 1 up to 10 min. The samples have presented nanometric porosity as a function of etching time, characteristic of heavily doped p type silicon. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The residual compressive stress tends to increase as expected due to the contribution of smaller crystallites to be more representative as the etching time increases. PbTe thin films were electrodeposited on PSL from aqueous alkaline solutions of Pb(CH3COO)2, disodium salt of ethylendiaminetetraacetic acid (EDTA) and TeO2 by galvanostatic and potentiostatic method. It was also obtained nanostructured PbTe thin films with polycrystalline morphology evidenced by X-ray Diffraction (XRD) spectra. Scanning Electron Microscopy (SEM) analysis has demonstrated good films reproducibility with an average grain size of 100 nm. |
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Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical processporous siliconelectrochemicalsemiconductorsPorous silicon layers (PSL) were produced by stain etching from a HF:HNO3 500:1 mixture with etching time varying in the range of 1 up to 10 min. The samples have presented nanometric porosity as a function of etching time, characteristic of heavily doped p type silicon. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The residual compressive stress tends to increase as expected due to the contribution of smaller crystallites to be more representative as the etching time increases. PbTe thin films were electrodeposited on PSL from aqueous alkaline solutions of Pb(CH3COO)2, disodium salt of ethylendiaminetetraacetic acid (EDTA) and TeO2 by galvanostatic and potentiostatic method. It was also obtained nanostructured PbTe thin films with polycrystalline morphology evidenced by X-ray Diffraction (XRD) spectra. Scanning Electron Microscopy (SEM) analysis has demonstrated good films reproducibility with an average grain size of 100 nm.ABM, ABC, ABPol2004-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000400016Materials Research v.7 n.4 2004reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392004000400016info:eu-repo/semantics/openAccessMiranda,Claudia Renata BorgesAbramof,Patrícia GuimarãesMelo,Francisco Cristovão Lourenço deFerreira,Neidenêi Gomeseng2005-11-08T00:00:00Zoai:scielo:S1516-14392004000400016Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2005-11-08T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
title |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
spellingShingle |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process Miranda,Claudia Renata Borges porous silicon electrochemical semiconductors |
title_short |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
title_full |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
title_fullStr |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
title_full_unstemmed |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
title_sort |
Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process |
author |
Miranda,Claudia Renata Borges |
author_facet |
Miranda,Claudia Renata Borges Abramof,Patrícia Guimarães Melo,Francisco Cristovão Lourenço de Ferreira,Neidenêi Gomes |
author_role |
author |
author2 |
Abramof,Patrícia Guimarães Melo,Francisco Cristovão Lourenço de Ferreira,Neidenêi Gomes |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Miranda,Claudia Renata Borges Abramof,Patrícia Guimarães Melo,Francisco Cristovão Lourenço de Ferreira,Neidenêi Gomes |
dc.subject.por.fl_str_mv |
porous silicon electrochemical semiconductors |
topic |
porous silicon electrochemical semiconductors |
description |
Porous silicon layers (PSL) were produced by stain etching from a HF:HNO3 500:1 mixture with etching time varying in the range of 1 up to 10 min. The samples have presented nanometric porosity as a function of etching time, characteristic of heavily doped p type silicon. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The residual compressive stress tends to increase as expected due to the contribution of smaller crystallites to be more representative as the etching time increases. PbTe thin films were electrodeposited on PSL from aqueous alkaline solutions of Pb(CH3COO)2, disodium salt of ethylendiaminetetraacetic acid (EDTA) and TeO2 by galvanostatic and potentiostatic method. It was also obtained nanostructured PbTe thin films with polycrystalline morphology evidenced by X-ray Diffraction (XRD) spectra. Scanning Electron Microscopy (SEM) analysis has demonstrated good films reproducibility with an average grain size of 100 nm. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000400016 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392004000400016 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14392004000400016 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.7 n.4 2004 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212657777344512 |