Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method

Detalhes bibliográficos
Autor(a) principal: Torres,J.
Data de Publicação: 2006
Outros Autores: Castillejo,F., Alfonso,J. E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600059
Resumo: Porous Silicon thin films were produced in this work by the electrochemical anodizing method. The samples were fabricated anodizing p type Si substrates with different resistivities in hydrofluoric acid. Samples were prepared at different current densities. The films were characterized through reflectance and room photoluminescence (PL) measurements in the visible region. A simple theoretical model is proposed to calculate the Optical constants of the material using a theoretical simulation of the reflectance spectra. The maximum positions of PL signals are shifted to long wavelengths as the porosity increase in samples prepared with substrates of resistivities of 0.1 and 1 omega-cm, while an opposite behaviour is observed in samples prepared on more doped substrates. The optical constants obtained through the calculation are the spectral variation of the refractive index and extinction coefficient, also are obtained the sample thickness and surface roughness.
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spelling Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing methodPorous siliconPhotoluminescenceOptical propertiesReflectanceOptical absorptionPorous Silicon thin films were produced in this work by the electrochemical anodizing method. The samples were fabricated anodizing p type Si substrates with different resistivities in hydrofluoric acid. Samples were prepared at different current densities. The films were characterized through reflectance and room photoluminescence (PL) measurements in the visible region. A simple theoretical model is proposed to calculate the Optical constants of the material using a theoretical simulation of the reflectance spectra. The maximum positions of PL signals are shifted to long wavelengths as the porosity increase in samples prepared with substrates of resistivities of 0.1 and 1 omega-cm, while an opposite behaviour is observed in samples prepared on more doped substrates. The optical constants obtained through the calculation are the spectral variation of the refractive index and extinction coefficient, also are obtained the sample thickness and surface roughness.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600059Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600059info:eu-repo/semantics/openAccessTorres,J.Castillejo,F.Alfonso,J. E.eng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600059Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
title Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
spellingShingle Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
Torres,J.
Porous silicon
Photoluminescence
Optical properties
Reflectance
Optical absorption
title_short Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
title_full Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
title_fullStr Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
title_full_unstemmed Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
title_sort Influence of the current density and resistivity on the optical properties of p-type porous silicon thin films fabricated by the electrochemical anodizing method
author Torres,J.
author_facet Torres,J.
Castillejo,F.
Alfonso,J. E.
author_role author
author2 Castillejo,F.
Alfonso,J. E.
author2_role author
author
dc.contributor.author.fl_str_mv Torres,J.
Castillejo,F.
Alfonso,J. E.
dc.subject.por.fl_str_mv Porous silicon
Photoluminescence
Optical properties
Reflectance
Optical absorption
topic Porous silicon
Photoluminescence
Optical properties
Reflectance
Optical absorption
description Porous Silicon thin films were produced in this work by the electrochemical anodizing method. The samples were fabricated anodizing p type Si substrates with different resistivities in hydrofluoric acid. Samples were prepared at different current densities. The films were characterized through reflectance and room photoluminescence (PL) measurements in the visible region. A simple theoretical model is proposed to calculate the Optical constants of the material using a theoretical simulation of the reflectance spectra. The maximum positions of PL signals are shifted to long wavelengths as the porosity increase in samples prepared with substrates of resistivities of 0.1 and 1 omega-cm, while an opposite behaviour is observed in samples prepared on more doped substrates. The optical constants obtained through the calculation are the spectral variation of the refractive index and extinction coefficient, also are obtained the sample thickness and surface roughness.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600059
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600059
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600059
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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