Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature

Detalhes bibliográficos
Autor(a) principal: Ramos,R.
Data de Publicação: 2021
Outros Autores: Chaves,M., Martins,E., Durrant,Steven F., Rangel,E.C., Silva,T.F. da, Bortoleto,J.R.R.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000700215
Resumo: Abstract Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
id ABMABCABPOL-1_a46454c17a614ebc5bcff4234ef010e1
oai_identifier_str oai:scielo:S1516-14392021000700215
network_acronym_str ABMABCABPOL-1
network_name_str Materials research (São Carlos. Online)
repository_id_str
spelling Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room TemperatureZnOAl thin filmsTCOmorphological propertiesAbstract Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.ABM, ABC, ABPol2021-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000700215Materials Research v.24 suppl.1 2021reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2021-0052info:eu-repo/semantics/openAccessRamos,R.Chaves,M.Martins,E.Durrant,Steven F.Rangel,E.C.Silva,T.F. daBortoleto,J.R.R.eng2021-07-21T00:00:00Zoai:scielo:S1516-14392021000700215Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2021-07-21T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
title Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
spellingShingle Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
Ramos,R.
ZnO
Al thin films
TCO
morphological properties
title_short Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
title_full Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
title_fullStr Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
title_full_unstemmed Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
title_sort Growth Evolution of AZO thin Films Deposited by Magnetron Sputtering at Room Temperature
author Ramos,R.
author_facet Ramos,R.
Chaves,M.
Martins,E.
Durrant,Steven F.
Rangel,E.C.
Silva,T.F. da
Bortoleto,J.R.R.
author_role author
author2 Chaves,M.
Martins,E.
Durrant,Steven F.
Rangel,E.C.
Silva,T.F. da
Bortoleto,J.R.R.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Ramos,R.
Chaves,M.
Martins,E.
Durrant,Steven F.
Rangel,E.C.
Silva,T.F. da
Bortoleto,J.R.R.
dc.subject.por.fl_str_mv ZnO
Al thin films
TCO
morphological properties
topic ZnO
Al thin films
TCO
morphological properties
description Abstract Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000700215
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392021000700215
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2021-0052
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.24 suppl.1 2021
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212679764934656

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