Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature

Detalhes bibliográficos
Autor(a) principal: Ramos, R. [UNESP]
Data de Publicação: 2021
Outros Autores: Chaves, M., Martins, E. [UNESP], Durrant, Steven F. [UNESP], Rangel, E. C. [UNESP], Da Silva, T. F., Bortoleto, J. R.R. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1590/1980-5373-MR-2021-0052
http://hdl.handle.net/11449/233369
Resumo: Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
id UNSP_8ac92dafe0936b8a7e6861e6ba50308e
oai_identifier_str oai:repositorio.unesp.br:11449/233369
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Growth evolution of AZO thin films deposited by magnetron sputtering at room temperatureAl thin filmsMorphological propertiesTCOZnOThin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Universidade Estadual Paulista (UNESP), Av. 3 Março, 511, SPUniversidade de Sorocaba, SPUniversidade de São Paulo (USP), Rua do Matão Trav. R187, SPUniversidade Estadual Paulista (UNESP), Av. 3 Março, 511, SPCAPES: 1795290/2018CNPq: 301622/2012-4CNPq: 555774/2010-4Universidade Estadual Paulista (UNESP)Universidade de SorocabaUniversidade de São Paulo (USP)Ramos, R. [UNESP]Chaves, M.Martins, E. [UNESP]Durrant, Steven F. [UNESP]Rangel, E. C. [UNESP]Da Silva, T. F.Bortoleto, J. R.R. [UNESP]2022-05-01T08:15:09Z2022-05-01T08:15:09Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1590/1980-5373-MR-2021-0052Materials Research, v. 24, n. S1, 2021.1980-53731516-1439http://hdl.handle.net/11449/23336910.1590/1980-5373-MR-2021-00522-s2.0-85112130662Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Researchinfo:eu-repo/semantics/openAccess2022-05-01T08:15:09Zoai:repositorio.unesp.br:11449/233369Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:14:15.847725Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
title Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
spellingShingle Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
Ramos, R. [UNESP]
Al thin films
Morphological properties
TCO
ZnO
title_short Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
title_full Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
title_fullStr Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
title_full_unstemmed Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
title_sort Growth evolution of AZO thin films deposited by magnetron sputtering at room temperature
author Ramos, R. [UNESP]
author_facet Ramos, R. [UNESP]
Chaves, M.
Martins, E. [UNESP]
Durrant, Steven F. [UNESP]
Rangel, E. C. [UNESP]
Da Silva, T. F.
Bortoleto, J. R.R. [UNESP]
author_role author
author2 Chaves, M.
Martins, E. [UNESP]
Durrant, Steven F. [UNESP]
Rangel, E. C. [UNESP]
Da Silva, T. F.
Bortoleto, J. R.R. [UNESP]
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Universidade de Sorocaba
Universidade de São Paulo (USP)
dc.contributor.author.fl_str_mv Ramos, R. [UNESP]
Chaves, M.
Martins, E. [UNESP]
Durrant, Steven F. [UNESP]
Rangel, E. C. [UNESP]
Da Silva, T. F.
Bortoleto, J. R.R. [UNESP]
dc.subject.por.fl_str_mv Al thin films
Morphological properties
TCO
ZnO
topic Al thin films
Morphological properties
TCO
ZnO
description Thin AZO films were grown by RF magnetron sputtering for different deposition times in argon plasmas. Optical, structural, and morphological properties, together with elemental composition, were studied and correlated with the observed effects on the electrical properties and compared with two models of mobility scattering (ionized impurities and grain boundaries). The results suggest that the carrier density in the studied case is limited to below 15% owing to the low ionization efficiency caused by the formation of neutral impurities as homologous phases. While the spread in the mobility during the initial stages of film growth is strongly influenced by grain boundaries, in thicker films the limitation on ion efficiency becomes more significant.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-01
2022-05-01T08:15:09Z
2022-05-01T08:15:09Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1590/1980-5373-MR-2021-0052
Materials Research, v. 24, n. S1, 2021.
1980-5373
1516-1439
http://hdl.handle.net/11449/233369
10.1590/1980-5373-MR-2021-0052
2-s2.0-85112130662
url http://dx.doi.org/10.1590/1980-5373-MR-2021-0052
http://hdl.handle.net/11449/233369
identifier_str_mv Materials Research, v. 24, n. S1, 2021.
1980-5373
1516-1439
10.1590/1980-5373-MR-2021-0052
2-s2.0-85112130662
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Research
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129039388377088

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