Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates

Detalhes bibliográficos
Autor(a) principal: Silva-Lopez,Hector Eduardo
Data de Publicação: 2018
Outros Autores: Marcelino,Becerril Silva, Guillen-Cervantes,Angel, Zelaya-Angel,Orlando, Ramirez-Bon,Rafael
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214
Resumo: Indium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates.
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spelling Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent SubstratesFlexible transparent substratesPETPENIndium-doped zinc oxidepolycrystalline thin filmsIndium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates.ABM, ABC, ABPol2018-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214Materials Research v.21 n.6 2018reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2018-0224info:eu-repo/semantics/openAccessSilva-Lopez,Hector EduardoMarcelino,Becerril SilvaGuillen-Cervantes,AngelZelaya-Angel,OrlandoRamirez-Bon,Rafaeleng2018-09-04T00:00:00Zoai:scielo:S1516-14392018000600214Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2018-09-04T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
title Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
spellingShingle Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
Silva-Lopez,Hector Eduardo
Flexible transparent substrates
PET
PEN
Indium-doped zinc oxide
polycrystalline thin films
title_short Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
title_full Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
title_fullStr Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
title_full_unstemmed Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
title_sort Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
author Silva-Lopez,Hector Eduardo
author_facet Silva-Lopez,Hector Eduardo
Marcelino,Becerril Silva
Guillen-Cervantes,Angel
Zelaya-Angel,Orlando
Ramirez-Bon,Rafael
author_role author
author2 Marcelino,Becerril Silva
Guillen-Cervantes,Angel
Zelaya-Angel,Orlando
Ramirez-Bon,Rafael
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Silva-Lopez,Hector Eduardo
Marcelino,Becerril Silva
Guillen-Cervantes,Angel
Zelaya-Angel,Orlando
Ramirez-Bon,Rafael
dc.subject.por.fl_str_mv Flexible transparent substrates
PET
PEN
Indium-doped zinc oxide
polycrystalline thin films
topic Flexible transparent substrates
PET
PEN
Indium-doped zinc oxide
polycrystalline thin films
description Indium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2018-0224
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.21 n.6 2018
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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