Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
Autor(a) principal: | |
---|---|
Data de Publicação: | 2018 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214 |
Resumo: | Indium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates. |
id |
ABMABCABPOL-1_c5aaf19198c856babd8f109485a24612 |
---|---|
oai_identifier_str |
oai:scielo:S1516-14392018000600214 |
network_acronym_str |
ABMABCABPOL-1 |
network_name_str |
Materials research (São Carlos. Online) |
repository_id_str |
|
spelling |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent SubstratesFlexible transparent substratesPETPENIndium-doped zinc oxidepolycrystalline thin filmsIndium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates.ABM, ABC, ABPol2018-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214Materials Research v.21 n.6 2018reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2018-0224info:eu-repo/semantics/openAccessSilva-Lopez,Hector EduardoMarcelino,Becerril SilvaGuillen-Cervantes,AngelZelaya-Angel,OrlandoRamirez-Bon,Rafaeleng2018-09-04T00:00:00Zoai:scielo:S1516-14392018000600214Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2018-09-04T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
title |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
spellingShingle |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates Silva-Lopez,Hector Eduardo Flexible transparent substrates PET PEN Indium-doped zinc oxide polycrystalline thin films |
title_short |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
title_full |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
title_fullStr |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
title_full_unstemmed |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
title_sort |
Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates |
author |
Silva-Lopez,Hector Eduardo |
author_facet |
Silva-Lopez,Hector Eduardo Marcelino,Becerril Silva Guillen-Cervantes,Angel Zelaya-Angel,Orlando Ramirez-Bon,Rafael |
author_role |
author |
author2 |
Marcelino,Becerril Silva Guillen-Cervantes,Angel Zelaya-Angel,Orlando Ramirez-Bon,Rafael |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Silva-Lopez,Hector Eduardo Marcelino,Becerril Silva Guillen-Cervantes,Angel Zelaya-Angel,Orlando Ramirez-Bon,Rafael |
dc.subject.por.fl_str_mv |
Flexible transparent substrates PET PEN Indium-doped zinc oxide polycrystalline thin films |
topic |
Flexible transparent substrates PET PEN Indium-doped zinc oxide polycrystalline thin films |
description |
Indium-doped zinc oxide (IZO) polycrystalline thin films were grown on polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and as reference on 7059 Corning glass substrates at room temperature by radio frequency magnetron sputtering from a target prepared with a mixture of ZnO and In2O3 powders. The structural, optical, and electrical properties of the films were analyzed and compared. The IZO polycrystalline films showed n-type conductivity. The electrical resistivity drops significantly, and the carrier concentration increases as a consequence of In incorporation within the ZnO crystalline lattice. In both cases the changes are of several orders of magnitude. The resistivity obtained was 3.1 ± 0.5 x 10-3 Ω-cm for an IZO sample grown on PET with a carrier concentration of 3.1 ± 0.7 x 1020 cm-3, the best mobility obtained was 27.7 ± 0.8 cm2V-1s-1 for an IZO sample grown on PEN. From the results, we conclude that n-type IZO polycrystalline films with high transmittance, high mobility and low resistivity were obtained on flexible transparent substrates. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000600214 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/1980-5373-mr-2018-0224 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.21 n.6 2018 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212673245937664 |