Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

Detalhes bibliográficos
Autor(a) principal: Estrada M.
Data de Publicação: 2016
Outros Autores: Rivas M., Garduno I., Avila-Herrera F., Cerdeira A., Pavanello M., Mejia I., Quevedo-Lopez M.A.
Tipo de documento: Artigo
Título da fonte: Biblioteca Digital de Teses e Dissertações da FEI
Texto Completo: https://repositorio.fei.edu.br/handle/FEI/1109
Resumo: © 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
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spelling Estrada M.Rivas M.Garduno I.Avila-Herrera F.Cerdeira A.Pavanello M.Mejia I.Quevedo-Lopez M.A.2019-08-19T23:45:11Z2019-08-19T23:45:11Z2016ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016.0026-2714https://repositorio.fei.edu.br/handle/FEI/110910.1016/j.microrel.2015.10.015© 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.562933Microelectronics ReliabilityTemperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistorsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleIGZO TFTsTemperature dependenceinfo:eu-repo/semantics/openAccessreponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEI152-s2.0-84954074341Electrical characteristicIgzo tftsLow temperaturesNegative voltageOperating rangesTemperature dependenceTransfer curvesTransport mechanismhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84954074341&origin=inward2022-06-01FEI/11092022-06-01 03:07:27.184Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI
dc.title.none.fl_str_mv Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
title Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
spellingShingle Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
Estrada M.
IGZO TFTs
Temperature dependence
title_short Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
title_full Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
title_fullStr Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
title_full_unstemmed Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
title_sort Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
author Estrada M.
author_facet Estrada M.
Rivas M.
Garduno I.
Avila-Herrera F.
Cerdeira A.
Pavanello M.
Mejia I.
Quevedo-Lopez M.A.
author_role author
author2 Rivas M.
Garduno I.
Avila-Herrera F.
Cerdeira A.
Pavanello M.
Mejia I.
Quevedo-Lopez M.A.
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Estrada M.
Rivas M.
Garduno I.
Avila-Herrera F.
Cerdeira A.
Pavanello M.
Mejia I.
Quevedo-Lopez M.A.
dc.subject.eng.fl_str_mv IGZO TFTs
Temperature dependence
topic IGZO TFTs
Temperature dependence
description © 2015 Elsevier Ltd.The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.
publishDate 2016
dc.date.issued.fl_str_mv 2016
dc.date.accessioned.fl_str_mv 2019-08-19T23:45:11Z
dc.date.available.fl_str_mv 2019-08-19T23:45:11Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016.
dc.identifier.uri.fl_str_mv https://repositorio.fei.edu.br/handle/FEI/1109
dc.identifier.issn.none.fl_str_mv 0026-2714
dc.identifier.doi.none.fl_str_mv 10.1016/j.microrel.2015.10.015
identifier_str_mv ESTRADA, M.; RIVAS, M.; GARDUÑO, I.; AVILA-HERRERA, F.; CERDEIRA, A.; PAVANELLO, M.; MEJIA, I.; QUEVEDO-LOPEZ, M.A.. Temperature dependence of the electrical characteristics up to 370K of amorphous In-Ga-ZnO thin film transistors. Microelectronics and Reliability, v. 56, p. 29-33, 2016.
0026-2714
10.1016/j.microrel.2015.10.015
url https://repositorio.fei.edu.br/handle/FEI/1109
dc.relation.ispartof.none.fl_str_mv Microelectronics Reliability
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Biblioteca Digital de Teses e Dissertações da FEI
instname:Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
instname_str Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron_str FEI
institution FEI
reponame_str Biblioteca Digital de Teses e Dissertações da FEI
collection Biblioteca Digital de Teses e Dissertações da FEI
repository.name.fl_str_mv
repository.mail.fl_str_mv
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