Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve

Detalhes bibliográficos
Autor(a) principal: Cunha A.I.A.
Data de Publicação: 2011
Outros Autores: Pavanello M.A., Trevisoli R.D., Galup-Montoro C., Schneider M.C.
Tipo de documento: Artigo
Título da fonte: Biblioteca Digital de Teses e Dissertações da FEI
Texto Completo: https://repositorio.fei.edu.br/handle/FEI/1083
Resumo: In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved.
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spelling Cunha A.I.A.Pavanello M.A.Trevisoli R.D.Galup-Montoro C.Schneider M.C.2019-08-19T23:45:09Z2019-08-19T23:45:09Z2011Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011.0038-1101https://repositorio.fei.edu.br/handle/FEI/108310.1016/j.sse.2010.10.011In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved.5618994Solid-State ElectronicsDirect determination of threshold condition in DG-MOSFETs from the g m/ID curveinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleDG-MOSFETParameter extractionThreshold voltageinfo:eu-repo/semantics/openAccessreponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEI182-s2.0-78751648930Channel lengthDG MOSFETsDiffusion componentsDirect determinationDouble-gate MOSFETsFunction methodsLinear regionMobility variationMOSFETsNumerical simulationSilicon filmsSimulation resultTemperature rangeTemperature valuesThermal voltageThreshold conditionTransconductance-to-current ratiohttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78751648930&origin=inward2022-06-01FEI/10832022-06-01 03:08:45.767Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI
dc.title.none.fl_str_mv Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
title Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
spellingShingle Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
Cunha A.I.A.
DG-MOSFET
Parameter extraction
Threshold voltage
title_short Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
title_full Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
title_fullStr Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
title_full_unstemmed Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
title_sort Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
author Cunha A.I.A.
author_facet Cunha A.I.A.
Pavanello M.A.
Trevisoli R.D.
Galup-Montoro C.
Schneider M.C.
author_role author
author2 Pavanello M.A.
Trevisoli R.D.
Galup-Montoro C.
Schneider M.C.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Cunha A.I.A.
Pavanello M.A.
Trevisoli R.D.
Galup-Montoro C.
Schneider M.C.
dc.subject.eng.fl_str_mv DG-MOSFET
Parameter extraction
Threshold voltage
topic DG-MOSFET
Parameter extraction
Threshold voltage
description In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved.
publishDate 2011
dc.date.issued.fl_str_mv 2011
dc.date.accessioned.fl_str_mv 2019-08-19T23:45:09Z
dc.date.available.fl_str_mv 2019-08-19T23:45:09Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.citation.fl_str_mv Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011.
dc.identifier.uri.fl_str_mv https://repositorio.fei.edu.br/handle/FEI/1083
dc.identifier.issn.none.fl_str_mv 0038-1101
dc.identifier.doi.none.fl_str_mv 10.1016/j.sse.2010.10.011
identifier_str_mv Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011.
0038-1101
10.1016/j.sse.2010.10.011
url https://repositorio.fei.edu.br/handle/FEI/1083
dc.relation.ispartof.none.fl_str_mv Solid-State Electronics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv reponame:Biblioteca Digital de Teses e Dissertações da FEI
instname:Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
instname_str Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron_str FEI
institution FEI
reponame_str Biblioteca Digital de Teses e Dissertações da FEI
collection Biblioteca Digital de Teses e Dissertações da FEI
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1734750992181755904

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