Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
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Data de Publicação: | 2011 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Título da fonte: | Biblioteca Digital de Teses e Dissertações da FEI |
Texto Completo: | https://repositorio.fei.edu.br/handle/FEI/1083 |
Resumo: | In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved. |
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Biblioteca Digital de Teses e Dissertações da FEI |
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Cunha A.I.A.Pavanello M.A.Trevisoli R.D.Galup-Montoro C.Schneider M.C.2019-08-19T23:45:09Z2019-08-19T23:45:09Z2011Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011.0038-1101https://repositorio.fei.edu.br/handle/FEI/108310.1016/j.sse.2010.10.011In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved.5618994Solid-State ElectronicsDirect determination of threshold condition in DG-MOSFETs from the g m/ID curveinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleDG-MOSFETParameter extractionThreshold voltageinfo:eu-repo/semantics/openAccessreponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEI182-s2.0-78751648930Channel lengthDG MOSFETsDiffusion componentsDirect determinationDouble-gate MOSFETsFunction methodsLinear regionMobility variationMOSFETsNumerical simulationSilicon filmsSimulation resultTemperature rangeTemperature valuesThermal voltageThreshold conditionTransconductance-to-current ratiohttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78751648930&origin=inward2022-06-01FEI/10832022-06-01 03:08:45.767Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI |
dc.title.none.fl_str_mv |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
title |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
spellingShingle |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve Cunha A.I.A. DG-MOSFET Parameter extraction Threshold voltage |
title_short |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
title_full |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
title_fullStr |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
title_full_unstemmed |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
title_sort |
Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve |
author |
Cunha A.I.A. |
author_facet |
Cunha A.I.A. Pavanello M.A. Trevisoli R.D. Galup-Montoro C. Schneider M.C. |
author_role |
author |
author2 |
Pavanello M.A. Trevisoli R.D. Galup-Montoro C. Schneider M.C. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Cunha A.I.A. Pavanello M.A. Trevisoli R.D. Galup-Montoro C. Schneider M.C. |
dc.subject.eng.fl_str_mv |
DG-MOSFET Parameter extraction Threshold voltage |
topic |
DG-MOSFET Parameter extraction Threshold voltage |
description |
In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved. |
publishDate |
2011 |
dc.date.issued.fl_str_mv |
2011 |
dc.date.accessioned.fl_str_mv |
2019-08-19T23:45:09Z |
dc.date.available.fl_str_mv |
2019-08-19T23:45:09Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011. |
dc.identifier.uri.fl_str_mv |
https://repositorio.fei.edu.br/handle/FEI/1083 |
dc.identifier.issn.none.fl_str_mv |
0038-1101 |
dc.identifier.doi.none.fl_str_mv |
10.1016/j.sse.2010.10.011 |
identifier_str_mv |
Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011. 0038-1101 10.1016/j.sse.2010.10.011 |
url |
https://repositorio.fei.edu.br/handle/FEI/1083 |
dc.relation.ispartof.none.fl_str_mv |
Solid-State Electronics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
reponame:Biblioteca Digital de Teses e Dissertações da FEI instname:Centro Universitário da Fundação Educacional Inaciana (FEI) instacron:FEI |
instname_str |
Centro Universitário da Fundação Educacional Inaciana (FEI) |
instacron_str |
FEI |
institution |
FEI |
reponame_str |
Biblioteca Digital de Teses e Dissertações da FEI |
collection |
Biblioteca Digital de Teses e Dissertações da FEI |
repository.name.fl_str_mv |
|
repository.mail.fl_str_mv |
|
_version_ |
1734750992181755904 |