Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/133010 |
Resumo: | Indium oxide (In2O3) has been widely used and studied as transparent conducting oxide (TCO). However, some of the more promising dopants for this oxide have not received much attention and even fewer explored by solution processes. This work focuses on developing solution processed doped (Hf, Mo, and Zr) In2O3 thin films and evaluating various annealing parameters on TCOs properties. Different processing syntheses, metallic cations molar ratio, and the number of deposited layers were studied, concluding that 0.2 M concentration and 8 layers deposition by spin coating using solution combustion synthesis (SCS) were the most favorable parameters. Optimized doped TCOs were obtained for 0.5 M % Hf-doped In2O3 when produced at 400 ˚C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, mobility of 6.65 cm2 /Vs and a carrier concentration of 1.72 × 1019 cm 3 . Finally, 0.5 M % Hf-doped In2O3 thin films were annealed in rapid thermal annealing (RTA) for 10 min at 600 ˚C, obtaining better results than before achieving a bulk resistivity of 3.95 × 10-3 Ω.cm, mobility of 21 cm2 /Vs and carrier concentration of 7.98 × 1019 cm-3. |
id |
RCAP_1781c1c4b67c8f462d75d612b29e275a |
---|---|
oai_identifier_str |
oai:run.unl.pt:10362/133010 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting OxidesTransparent conducting oxidesolution combustion synthesisdoped indium oxide thin filmshafniumrapid thermal annealingDomínio/Área Científica::Engenharia e Tecnologia::Engenharia dos MateriaisIndium oxide (In2O3) has been widely used and studied as transparent conducting oxide (TCO). However, some of the more promising dopants for this oxide have not received much attention and even fewer explored by solution processes. This work focuses on developing solution processed doped (Hf, Mo, and Zr) In2O3 thin films and evaluating various annealing parameters on TCOs properties. Different processing syntheses, metallic cations molar ratio, and the number of deposited layers were studied, concluding that 0.2 M concentration and 8 layers deposition by spin coating using solution combustion synthesis (SCS) were the most favorable parameters. Optimized doped TCOs were obtained for 0.5 M % Hf-doped In2O3 when produced at 400 ˚C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, mobility of 6.65 cm2 /Vs and a carrier concentration of 1.72 × 1019 cm 3 . Finally, 0.5 M % Hf-doped In2O3 thin films were annealed in rapid thermal annealing (RTA) for 10 min at 600 ˚C, obtaining better results than before achieving a bulk resistivity of 3.95 × 10-3 Ω.cm, mobility of 21 cm2 /Vs and carrier concentration of 7.98 × 1019 cm-3.O óxido de índio (In2O3) tem sido amplamente utilizado e investigado como óxido condutor transparente (TCO). No entanto, alguns dos dopantes mais promissores para este óxido foram pouco estudados e ainda menos explorados por processos de solução. Este trabalho foca no desenvolvimento de filmes finos dopados (Hf, Mo e Zr) In2O3 processados por solução e na avaliação de vários parâmetros de recozimento nas propriedades do TCO. Diferentes sínteses de processamento, razão molar de catiões metálicos e número de camadas depositadas foram estudadas, concluindo que a concentração de 0,2 M e a deposição de 8 camadas por spin coating usando síntese de solução por combustão (SCS) foram os parâmetros mais favoráveis. TCOs dopados otimizados foram obtidos para In2O3 dopado com 0,5 M% Hf quando produzido a 400 ˚C, mostrando alta transparência na região visível do espectro, uma resistividade em volume de 5,73 × 10-2 Ω.cm, mobilidade de 6,65 cm2 / Vs e uma concentração de portadores de 1,72 × 1019 cm-3 . Finalmente, filmes finos de In2O3 dopados com 0,5 M% de Hf foram recozidos em recozimento térmico rápido (RTA) por 10 min a 600 ˚C, obtendo resultados melhores do que os anteriores, atingindo uma resistividade em volume de 3,95 × 10-3 Ω.cm, mobilidade de 21 cm2 /Vs e concentração de portadores de 7,98 × 1019 cm-3.Branquinho, RitaBarquinha, PedroRUNFirmino, Rita Maria Gomes2022-08-01T00:31:23Z2022-01-202022-01-20T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/133010enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:11:42Zoai:run.unl.pt:10362/133010Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:47:40.679454Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
title |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
spellingShingle |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides Firmino, Rita Maria Gomes Transparent conducting oxide solution combustion synthesis doped indium oxide thin films hafnium rapid thermal annealing Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
title_short |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
title_full |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
title_fullStr |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
title_full_unstemmed |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
title_sort |
Solution Processing of Doped Indium Oxide for Applications as Transparent Conducting Oxides |
author |
Firmino, Rita Maria Gomes |
author_facet |
Firmino, Rita Maria Gomes |
author_role |
author |
dc.contributor.none.fl_str_mv |
Branquinho, Rita Barquinha, Pedro RUN |
dc.contributor.author.fl_str_mv |
Firmino, Rita Maria Gomes |
dc.subject.por.fl_str_mv |
Transparent conducting oxide solution combustion synthesis doped indium oxide thin films hafnium rapid thermal annealing Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
topic |
Transparent conducting oxide solution combustion synthesis doped indium oxide thin films hafnium rapid thermal annealing Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
description |
Indium oxide (In2O3) has been widely used and studied as transparent conducting oxide (TCO). However, some of the more promising dopants for this oxide have not received much attention and even fewer explored by solution processes. This work focuses on developing solution processed doped (Hf, Mo, and Zr) In2O3 thin films and evaluating various annealing parameters on TCOs properties. Different processing syntheses, metallic cations molar ratio, and the number of deposited layers were studied, concluding that 0.2 M concentration and 8 layers deposition by spin coating using solution combustion synthesis (SCS) were the most favorable parameters. Optimized doped TCOs were obtained for 0.5 M % Hf-doped In2O3 when produced at 400 ˚C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, mobility of 6.65 cm2 /Vs and a carrier concentration of 1.72 × 1019 cm 3 . Finally, 0.5 M % Hf-doped In2O3 thin films were annealed in rapid thermal annealing (RTA) for 10 min at 600 ˚C, obtaining better results than before achieving a bulk resistivity of 3.95 × 10-3 Ω.cm, mobility of 21 cm2 /Vs and carrier concentration of 7.98 × 1019 cm-3. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-08-01T00:31:23Z 2022-01-20 2022-01-20T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/133010 |
url |
http://hdl.handle.net/10362/133010 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799138079488868352 |