Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/30486 |
Resumo: | The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin CIGS solar cells. Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. Equivalent circuits for modeling the behavior of each type of solar cells in AC regime are based on admittance measurements. It is of the utmost importance to understand the AC electrical behavior of each device, as the electrical behavior of ultrathin and passivated ultrathin CIGS devices are yet to be fully understood. The analysis shows a simpler AC equivalent circuit for the ultrathin device without passivation layer, which might be explained by the lowered bulk recombination for thin film CIGS solar cells when compared with reference thick ones. Moreover, it is observed an increase in shunt resistance for the passivated ultrathin device, which strengthens the importance of passivation for shunts mitigation when compared to unpassivated devices. |
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Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cellsAdmittanceCu(In,Ga)Se2 (CIGS)PassivationUltrathin solar cellsThe present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin CIGS solar cells. Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. Equivalent circuits for modeling the behavior of each type of solar cells in AC regime are based on admittance measurements. It is of the utmost importance to understand the AC electrical behavior of each device, as the electrical behavior of ultrathin and passivated ultrathin CIGS devices are yet to be fully understood. The analysis shows a simpler AC equivalent circuit for the ultrathin device without passivation layer, which might be explained by the lowered bulk recombination for thin film CIGS solar cells when compared with reference thick ones. Moreover, it is observed an increase in shunt resistance for the passivated ultrathin device, which strengthens the importance of passivation for shunts mitigation when compared to unpassivated devices.IEEE2021-02-04T10:51:02Z2019-09-01T00:00:00Z2019-09info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/30486eng2156-338110.1109/JPHOTOV.2019.2927918Cunha, J. M.V.Rocha, C.Vinhais, C.Fernandes, P. A.Salomé, P. M. P.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:58:51Zoai:ria.ua.pt:10773/30486Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:02:33.368520Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
title |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
spellingShingle |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells Cunha, J. M.V. Admittance Cu(In,Ga)Se2 (CIGS) Passivation Ultrathin solar cells |
title_short |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
title_full |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
title_fullStr |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
title_full_unstemmed |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
title_sort |
Understanding the AC equivalent circuit response of ultrathin Cu(In,Ga)Se2 solar cells |
author |
Cunha, J. M.V. |
author_facet |
Cunha, J. M.V. Rocha, C. Vinhais, C. Fernandes, P. A. Salomé, P. M. P. |
author_role |
author |
author2 |
Rocha, C. Vinhais, C. Fernandes, P. A. Salomé, P. M. P. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Cunha, J. M.V. Rocha, C. Vinhais, C. Fernandes, P. A. Salomé, P. M. P. |
dc.subject.por.fl_str_mv |
Admittance Cu(In,Ga)Se2 (CIGS) Passivation Ultrathin solar cells |
topic |
Admittance Cu(In,Ga)Se2 (CIGS) Passivation Ultrathin solar cells |
description |
The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin CIGS solar cells. Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. Equivalent circuits for modeling the behavior of each type of solar cells in AC regime are based on admittance measurements. It is of the utmost importance to understand the AC electrical behavior of each device, as the electrical behavior of ultrathin and passivated ultrathin CIGS devices are yet to be fully understood. The analysis shows a simpler AC equivalent circuit for the ultrathin device without passivation layer, which might be explained by the lowered bulk recombination for thin film CIGS solar cells when compared with reference thick ones. Moreover, it is observed an increase in shunt resistance for the passivated ultrathin device, which strengthens the importance of passivation for shunts mitigation when compared to unpassivated devices. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-09-01T00:00:00Z 2019-09 2021-02-04T10:51:02Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/30486 |
url |
http://hdl.handle.net/10773/30486 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2156-3381 10.1109/JPHOTOV.2019.2927918 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
IEEE |
publisher.none.fl_str_mv |
IEEE |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799137680928276480 |