On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/31466 |
Resumo: | Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem. |
id |
RCAP_f6a00fe9539067f96abfe16927c9f8e1 |
---|---|
oai_identifier_str |
oai:ria.ua.pt:10773/31466 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cellsUltrathin CIGSKF-PDT passivationAl2O3Recombination mechanismsRear interface passivationSeveral optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem.American Chemical Society2022-06-04T00:00:00Z2021-06-04T00:00:00Z2021-06-04info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/31466eng1944-824410.1021/acsami.1c07943Lopes, Tomás S.Wild, Jessica deRocha, CéliaViolas, AndréCunha, José M. V.Teixeira, Jennifer P.Curado, Marco A.Oliveira, António J. N.Borme, JérômeBirant, GizemBrammertz, GuyFernandes, Paulo A.Vermang, BartSalomé, Pedro M. P.info:eu-repo/semantics/embargoedAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-06T04:32:07Zoai:ria.ua.pt:10773/31466Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-06T04:32:07Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
title |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
spellingShingle |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells Lopes, Tomás S. Ultrathin CIGS KF-PDT passivation Al2O3 Recombination mechanisms Rear interface passivation |
title_short |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
title_full |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
title_fullStr |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
title_full_unstemmed |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
title_sort |
On the importance of joint mitigation strategies for front, bulk, and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells |
author |
Lopes, Tomás S. |
author_facet |
Lopes, Tomás S. Wild, Jessica de Rocha, Célia Violas, André Cunha, José M. V. Teixeira, Jennifer P. Curado, Marco A. Oliveira, António J. N. Borme, Jérôme Birant, Gizem Brammertz, Guy Fernandes, Paulo A. Vermang, Bart Salomé, Pedro M. P. |
author_role |
author |
author2 |
Wild, Jessica de Rocha, Célia Violas, André Cunha, José M. V. Teixeira, Jennifer P. Curado, Marco A. Oliveira, António J. N. Borme, Jérôme Birant, Gizem Brammertz, Guy Fernandes, Paulo A. Vermang, Bart Salomé, Pedro M. P. |
author2_role |
author author author author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Lopes, Tomás S. Wild, Jessica de Rocha, Célia Violas, André Cunha, José M. V. Teixeira, Jennifer P. Curado, Marco A. Oliveira, António J. N. Borme, Jérôme Birant, Gizem Brammertz, Guy Fernandes, Paulo A. Vermang, Bart Salomé, Pedro M. P. |
dc.subject.por.fl_str_mv |
Ultrathin CIGS KF-PDT passivation Al2O3 Recombination mechanisms Rear interface passivation |
topic |
Ultrathin CIGS KF-PDT passivation Al2O3 Recombination mechanisms Rear interface passivation |
description |
Several optoelectronic issues, such as poor optical absorption and recombination limit the power conversion efficiency of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. To mitigate recombination losses, two combined strategies were implemented: a Potassium Fluoride (KF) Post-Deposition Treatment (PDT) and a rear interface passivation strategy based on an Aluminium Oxide (Al2O3) point contact structure. The simultaneous implementation of both strategies is reported for the first time on ultrathin CIGS devices. Electrical measurements and 1-D simulations demonstrate that, in specific conditions, devices with only KF-PDT may outperform rear interface passivated based devices. By combining KF-PDT and rear interface passivation, an enhancement in open-circuit voltage of 178 mV is reached over devices that have a rear passivation only and of 85 mV over devices with only a KF-PDT process. Time-Resolved Photoluminescence measurements showed the beneficial effects of combining KF-PDT and the rear interface passivation at decreasing recombination losses in the studied devices, enhancing charge carrier lifetime. X-ray photoelectron spectroscopy measurements indicate the presence of a In and Se rich layer that we linked to be a KInSe2 layer. Our results suggest that when bulk and front interface recombination values are very high, they dominate and individual passivation strategies work poorly. Hence, this work shows that for ultrathin devices, passivation mitigation strategies need to be implemented in tandem. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-06-04T00:00:00Z 2021-06-04 2022-06-04T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/31466 |
url |
http://hdl.handle.net/10773/31466 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
1944-8244 10.1021/acsami.1c07943 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/embargoedAccess |
eu_rights_str_mv |
embargoedAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Chemical Society |
publisher.none.fl_str_mv |
American Chemical Society |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
_version_ |
1817543780809572352 |