Decoupling of optical and electrical properties of rear contact CIGS solar cells

Detalhes bibliográficos
Autor(a) principal: Cunha, J. M. V.
Data de Publicação: 2019
Outros Autores: Lopes, T. S., Bose, S., Hultqvist, A., Chen, W.-C., Donzel-Gargand, O., Ribeiro, R. M., Oliveira, A. J. N., Edoff, M., Fernandes, P. A., Salomé, P. M. P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/30457
Resumo: A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) an enhanced optical reflection is achieved by depositing a metallic layer over the Mo rear contact; ii) the addition of a sputtered Al2O3 layer improves the interface quality with CIGS; and, iii) the rear-openings are refilled with Mo to maintain the optimal ohmic electrical contact as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical function of the substrate is achieved. We present in detail the manufacturing procedure of such type of architectures together with its benefits and caveats. A preliminary electrical analysis of resulting solar cells showing a proof-of-concept of the architecture is presented and discussed.
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spelling Decoupling of optical and electrical properties of rear contact CIGS solar cellsCu(In,Ga)Se2 (CIGS)PassivationSemiconductorsUltrathinA novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) an enhanced optical reflection is achieved by depositing a metallic layer over the Mo rear contact; ii) the addition of a sputtered Al2O3 layer improves the interface quality with CIGS; and, iii) the rear-openings are refilled with Mo to maintain the optimal ohmic electrical contact as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical function of the substrate is achieved. We present in detail the manufacturing procedure of such type of architectures together with its benefits and caveats. A preliminary electrical analysis of resulting solar cells showing a proof-of-concept of the architecture is presented and discussed.IEEE2021-02-01T15:57:17Z2019-08-01T00:00:00Z2019-08info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/30457eng2156-338110.1109/JPHOTOV.2019.2933357Cunha, J. M. V.Lopes, T. S.Bose, S.Hultqvist, A.Chen, W.-C.Donzel-Gargand, O.Ribeiro, R. M.Oliveira, A. J. N.Edoff, M.Fernandes, P. A.Salomé, P. M. P.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-06T04:29:57Zoai:ria.ua.pt:10773/30457Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-06T04:29:57Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Decoupling of optical and electrical properties of rear contact CIGS solar cells
title Decoupling of optical and electrical properties of rear contact CIGS solar cells
spellingShingle Decoupling of optical and electrical properties of rear contact CIGS solar cells
Cunha, J. M. V.
Cu(In,Ga)Se2 (CIGS)
Passivation
Semiconductors
Ultrathin
title_short Decoupling of optical and electrical properties of rear contact CIGS solar cells
title_full Decoupling of optical and electrical properties of rear contact CIGS solar cells
title_fullStr Decoupling of optical and electrical properties of rear contact CIGS solar cells
title_full_unstemmed Decoupling of optical and electrical properties of rear contact CIGS solar cells
title_sort Decoupling of optical and electrical properties of rear contact CIGS solar cells
author Cunha, J. M. V.
author_facet Cunha, J. M. V.
Lopes, T. S.
Bose, S.
Hultqvist, A.
Chen, W.-C.
Donzel-Gargand, O.
Ribeiro, R. M.
Oliveira, A. J. N.
Edoff, M.
Fernandes, P. A.
Salomé, P. M. P.
author_role author
author2 Lopes, T. S.
Bose, S.
Hultqvist, A.
Chen, W.-C.
Donzel-Gargand, O.
Ribeiro, R. M.
Oliveira, A. J. N.
Edoff, M.
Fernandes, P. A.
Salomé, P. M. P.
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Cunha, J. M. V.
Lopes, T. S.
Bose, S.
Hultqvist, A.
Chen, W.-C.
Donzel-Gargand, O.
Ribeiro, R. M.
Oliveira, A. J. N.
Edoff, M.
Fernandes, P. A.
Salomé, P. M. P.
dc.subject.por.fl_str_mv Cu(In,Ga)Se2 (CIGS)
Passivation
Semiconductors
Ultrathin
topic Cu(In,Ga)Se2 (CIGS)
Passivation
Semiconductors
Ultrathin
description A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) an enhanced optical reflection is achieved by depositing a metallic layer over the Mo rear contact; ii) the addition of a sputtered Al2O3 layer improves the interface quality with CIGS; and, iii) the rear-openings are refilled with Mo to maintain the optimal ohmic electrical contact as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical function of the substrate is achieved. We present in detail the manufacturing procedure of such type of architectures together with its benefits and caveats. A preliminary electrical analysis of resulting solar cells showing a proof-of-concept of the architecture is presented and discussed.
publishDate 2019
dc.date.none.fl_str_mv 2019-08-01T00:00:00Z
2019-08
2021-02-01T15:57:17Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/30457
url http://hdl.handle.net/10773/30457
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2156-3381
10.1109/JPHOTOV.2019.2933357
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv IEEE
publisher.none.fl_str_mv IEEE
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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