Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/143767 |
Resumo: | Transparent conducting oxides (TCOs) serve as a technological necessity in a multitude of indus-tries, being used in a vast array of devices, from photovoltaic cells to transparent electronics. However, high economical costs and growing environmental concerns have led to the decline in popularity of many key materials that are able to produce TCOs. This has, understandably, led to the research and development of new materials and technologies that are able to be produce TCOs in a cost-effective/en-vironmentally-friendly fashion, while still retaining the desired electrical properties. In the present work, atomic layer deposition (ALD) was employed in order to produce conformal and uniform zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films. The deposition process of ZnO was optimized within a range of temperatures between 100-200 ºC, with a typical ALD regime being achieved within the interval 125-150 ºC, after the tuning of precursor pulses times. After the aforementioned optimization, AZO films were produced at a temperature of 150 ºC, of which the morphological and electrical properties were investigated as a function of dopant concentra-tion. Promising results were achieved, with an aluminum concentration of 1.98% attaining bulk resis-tivity and Hall mobility of 6.65x10-3 Ω*cm and 7.06 cm2/V*s, respectively. This opens the possibility to produce conformal and uniform films capable of attaining good electrical properties while employing a smaller thermal budget, facilitating film depositions on top of more temperature sensitive substrates. |
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Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductorsTCOALDZnOAZObulk resistivityHall mobilityDomínio/Área Científica::Engenharia e Tecnologia::NanotecnologiaTransparent conducting oxides (TCOs) serve as a technological necessity in a multitude of indus-tries, being used in a vast array of devices, from photovoltaic cells to transparent electronics. However, high economical costs and growing environmental concerns have led to the decline in popularity of many key materials that are able to produce TCOs. This has, understandably, led to the research and development of new materials and technologies that are able to be produce TCOs in a cost-effective/en-vironmentally-friendly fashion, while still retaining the desired electrical properties. In the present work, atomic layer deposition (ALD) was employed in order to produce conformal and uniform zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films. The deposition process of ZnO was optimized within a range of temperatures between 100-200 ºC, with a typical ALD regime being achieved within the interval 125-150 ºC, after the tuning of precursor pulses times. After the aforementioned optimization, AZO films were produced at a temperature of 150 ºC, of which the morphological and electrical properties were investigated as a function of dopant concentra-tion. Promising results were achieved, with an aluminum concentration of 1.98% attaining bulk resis-tivity and Hall mobility of 6.65x10-3 Ω*cm and 7.06 cm2/V*s, respectively. This opens the possibility to produce conformal and uniform films capable of attaining good electrical properties while employing a smaller thermal budget, facilitating film depositions on top of more temperature sensitive substrates.Óxidos condutores transparentes (TCOs) são uma necessidade tecnológica numa variedade de indústrias, sendo utilizados numa vasta gama de dispositivos, desde células fotovoltaicas à eletrónica transparente. Contudo, elevados custos financeiros e crescentes preocupações ambientais levaram à di-minuição da popularidade de materiais capazes de produzir TCOs. Isto levou, compreensivelmente, ao estudo e desenvolvimento de novos materiais e tecnologias capazes de desenvolver TCOs de formas financeiramente eficazes e ambientalmente conscientes, mantendo mesmo assim as propriedades elétri-cas desejadas. No presente trabalho, atomic layer deposition (ALD) foi empregue para produzir filmes finos uniformes e conformais de óxido de zinco (ZnO) e óxido de zinco dopado com alumínio (AZO). O processo de deposição do ZnO foi otimizado num intervalo de temperaturas entre 100-200 ºC, tendo-se obtido um típico regime de ALD entre 125-150 ºC, após o ajuste dos tempos de pulso do precursor. Após a supramencionada otimização, filmes de AZO foram fabricados usando uma temperatura de 150 ºC, analisando-se as propriedades morfológicas e elétricas em função da concentração de do-pante. Foram obtidos resultados promissores, sendo que com uma concentração de alumínio de 1.98% se obteve uma resistividade e mobilidade de Hall de 6.65x10-3 Ω*cm e 7.06 cm2/V*s, respetivamente. Assim, existe a possibilidade de criar filmes conformes e uniformes capazes de obter boas propriedades elétricas usando processos de baixa temperatura, permitindo a deposição de filmes em substratos mais sensíveis à temperatura.Barquinha, PedroDeuermeier, JonasRUNFelizardo, Rui Pedro Martins2022-09-16T08:55:57Z2022-022022-02-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/143767enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:22:26Zoai:run.unl.pt:10362/143767Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:51:07.161592Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
title |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
spellingShingle |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors Felizardo, Rui Pedro Martins TCO ALD ZnO AZO bulk resistivity Hall mobility Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
title_short |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
title_full |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
title_fullStr |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
title_full_unstemmed |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
title_sort |
Aluminum doping of zinc oxide thin films produced by atomic layer deposition for transparent conductors |
author |
Felizardo, Rui Pedro Martins |
author_facet |
Felizardo, Rui Pedro Martins |
author_role |
author |
dc.contributor.none.fl_str_mv |
Barquinha, Pedro Deuermeier, Jonas RUN |
dc.contributor.author.fl_str_mv |
Felizardo, Rui Pedro Martins |
dc.subject.por.fl_str_mv |
TCO ALD ZnO AZO bulk resistivity Hall mobility Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
topic |
TCO ALD ZnO AZO bulk resistivity Hall mobility Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
description |
Transparent conducting oxides (TCOs) serve as a technological necessity in a multitude of indus-tries, being used in a vast array of devices, from photovoltaic cells to transparent electronics. However, high economical costs and growing environmental concerns have led to the decline in popularity of many key materials that are able to produce TCOs. This has, understandably, led to the research and development of new materials and technologies that are able to be produce TCOs in a cost-effective/en-vironmentally-friendly fashion, while still retaining the desired electrical properties. In the present work, atomic layer deposition (ALD) was employed in order to produce conformal and uniform zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films. The deposition process of ZnO was optimized within a range of temperatures between 100-200 ºC, with a typical ALD regime being achieved within the interval 125-150 ºC, after the tuning of precursor pulses times. After the aforementioned optimization, AZO films were produced at a temperature of 150 ºC, of which the morphological and electrical properties were investigated as a function of dopant concentra-tion. Promising results were achieved, with an aluminum concentration of 1.98% attaining bulk resis-tivity and Hall mobility of 6.65x10-3 Ω*cm and 7.06 cm2/V*s, respectively. This opens the possibility to produce conformal and uniform films capable of attaining good electrical properties while employing a smaller thermal budget, facilitating film depositions on top of more temperature sensitive substrates. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-09-16T08:55:57Z 2022-02 2022-02-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/143767 |
url |
http://hdl.handle.net/10362/143767 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799138106197147648 |