Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy

Detalhes bibliográficos
Autor(a) principal: Fabbri, Luca
Data de Publicação: 2023
Outros Autores: Bordoni, Camilla, Barquinha, Pedro, Crocco, Jerome, Fraboni, Beatrice, Cramer, Tobias
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/158277
Resumo: Funding Information: L.F. and T.C. acknowledge the funding by the EU - NextGenerationEU with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. P.B. received funding from FEDER funds through the COMPETE 2020 program and National Funds through FCT—Portuguese Foundation for Science and Technology—under the scope of Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 and from the European Community’s Horizon Europe program under Grant Agreement Nos. 716510 (ERC-2016-StG TREND) and 101082283 (ERC-2022-POC2 FLETRAD). Publisher Copyright: © 2023 Author(s).
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spelling Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopyMaterials Science(all)Engineering(all)Funding Information: L.F. and T.C. acknowledge the funding by the EU - NextGenerationEU with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. P.B. received funding from FEDER funds through the COMPETE 2020 program and National Funds through FCT—Portuguese Foundation for Science and Technology—under the scope of Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 and from the European Community’s Horizon Europe program under Grant Agreement Nos. 716510 (ERC-2016-StG TREND) and 101082283 (ERC-2022-POC2 FLETRAD). Publisher Copyright: © 2023 Author(s).The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal-insulator-semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium-Gallium-Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)RUNFabbri, LucaBordoni, CamillaBarquinha, PedroCrocco, JeromeFraboni, BeatriceCramer, Tobias2023-09-25T22:20:48Z2023-06-012023-06-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article9application/pdfhttp://hdl.handle.net/10362/158277eng2166-532XPURE: 72364486https://doi.org/10.1063/5.0151367info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:40:35Zoai:run.unl.pt:10362/158277Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:57:03.170873Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
title Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
spellingShingle Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
Fabbri, Luca
Materials Science(all)
Engineering(all)
title_short Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
title_full Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
title_fullStr Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
title_full_unstemmed Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
title_sort Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
author Fabbri, Luca
author_facet Fabbri, Luca
Bordoni, Camilla
Barquinha, Pedro
Crocco, Jerome
Fraboni, Beatrice
Cramer, Tobias
author_role author
author2 Bordoni, Camilla
Barquinha, Pedro
Crocco, Jerome
Fraboni, Beatrice
Cramer, Tobias
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
RUN
dc.contributor.author.fl_str_mv Fabbri, Luca
Bordoni, Camilla
Barquinha, Pedro
Crocco, Jerome
Fraboni, Beatrice
Cramer, Tobias
dc.subject.por.fl_str_mv Materials Science(all)
Engineering(all)
topic Materials Science(all)
Engineering(all)
description Funding Information: L.F. and T.C. acknowledge the funding by the EU - NextGenerationEU with funds made available by the National Recovery and Resilience Plan (NRRP) Mission 4, Component 1, Investment 4.1 (MD 351/2022)—NRRP Research. P.B. received funding from FEDER funds through the COMPETE 2020 program and National Funds through FCT—Portuguese Foundation for Science and Technology—under the scope of Project Nos. LA/P/0037/2020, UIDP/50025/2020, and UIDB/50025/2020 and from the European Community’s Horizon Europe program under Grant Agreement Nos. 716510 (ERC-2016-StG TREND) and 101082283 (ERC-2022-POC2 FLETRAD). Publisher Copyright: © 2023 Author(s).
publishDate 2023
dc.date.none.fl_str_mv 2023-09-25T22:20:48Z
2023-06-01
2023-06-01T00:00:00Z
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url http://hdl.handle.net/10362/158277
dc.language.iso.fl_str_mv eng
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PURE: 72364486
https://doi.org/10.1063/5.0151367
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