Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 2010
Outros Autores: Stepikhova, M., Kozanecki, A., Andrês, G., Alves, E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13752
Resumo: Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.
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spelling Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputteringNanocrystalline siliconErbium dopingErbium emissionScience & TechnologyErbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.FCT (POCTI/CTM/39395) and INTAS Project #03-51-6486.American Scientific PublishersUniversidade do MinhoCerqueira, M. F.Stepikhova, M.Kozanecki, A.Andrês, G.Alves, E.20102010-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13752eng1533-488010.1166/jnn.2010.1380http://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000004/art00060info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:41:08Zoai:repositorium.sdum.uminho.pt:1822/13752Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:38:02.701374Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
title Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
spellingShingle Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
Cerqueira, M. F.
Nanocrystalline silicon
Erbium doping
Erbium emission
Science & Technology
title_short Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
title_full Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
title_fullStr Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
title_full_unstemmed Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
title_sort Crystal size and crystalline volume fraction effects on the Erbium emission of nc-Si:Er grown by r.f. sputtering
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Stepikhova, M.
Kozanecki, A.
Andrês, G.
Alves, E.
author_role author
author2 Stepikhova, M.
Kozanecki, A.
Andrês, G.
Alves, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Kozanecki, A.
Andrês, G.
Alves, E.
dc.subject.por.fl_str_mv Nanocrystalline silicon
Erbium doping
Erbium emission
Science & Technology
topic Nanocrystalline silicon
Erbium doping
Erbium emission
Science & Technology
description Erbium-doped low-dimensional Si films with different microstructures were grown by reactive magnetron sputtering on glass substrates by varying the deposition parameters. Their structure and chemical composition were studied by micro-Raman and Rutherford backscattering spectrometry, respectively. In this contribution the Erbium emission is studied as a function of nanocrystalline fraction and average crystal sizes and also as a function of the matrix chemical composition. We discuss the temperature dependence of the Er3+ emission as well as the possible explanations of the low Er active fraction.
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13752
url http://hdl.handle.net/1822/13752
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1533-4880
10.1166/jnn.2010.1380
http://www.ingentaconnect.com/content/asp/jnn/2010/00000010/00000004/art00060
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dc.publisher.none.fl_str_mv American Scientific Publishers
publisher.none.fl_str_mv American Scientific Publishers
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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