Photopatternable gate insulator for oxide TFTs
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/143747 |
Resumo: | A photopatternable and solution-processable dielectric polymer, as the one provided by Solvay for this work, has physical properties that make it a unique candidate for gate dielectric in thin-film transistors (TFT), allowing to save time and reduce the complexity of the processes involved. To demonstrate that this material can be patterned using Ultra-Violet (UV) light and the exposed pattern can be developed in acetone, an opti-mization of the processing conditions was made in terms of the deposition conditions, curing and development steps. The polymer films were deposited by spin coating, followed by a baking at 90°C for 10 minutes and cured using a lightbulb with 365nm wavelength. The films were then characterized by profilometry, transmit-tance, atomic force microscopy (AFM), and scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS). The polymer films were used in metal-insulator-metal (MIM) capacitors as well as gate dielectric in In-Ga-Zn-O (IGZO) TFTs. The MIM capacitors showed a dielectric constant of 8.35 at 1kHz, a leakage current density below 1.07×10-7 A.cm-2 at 1MV.cm-1, and a breakdown field higher than 1.5MV.cm-1. The TFT had turn-on voltage (Von) of -1V, saturation mobility of (μSat) of 7.07 cm2·V-1·s-1 and on/off current ratio of 105, positioning them close to the IGZO TFTs using traditional dielectrics that require complex etching processes. |
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Photopatternable gate insulator for oxide TFTsPhotopatternableDielectricIGZO TFTDomínio/Área Científica::Engenharia e Tecnologia::NanotecnologiaA photopatternable and solution-processable dielectric polymer, as the one provided by Solvay for this work, has physical properties that make it a unique candidate for gate dielectric in thin-film transistors (TFT), allowing to save time and reduce the complexity of the processes involved. To demonstrate that this material can be patterned using Ultra-Violet (UV) light and the exposed pattern can be developed in acetone, an opti-mization of the processing conditions was made in terms of the deposition conditions, curing and development steps. The polymer films were deposited by spin coating, followed by a baking at 90°C for 10 minutes and cured using a lightbulb with 365nm wavelength. The films were then characterized by profilometry, transmit-tance, atomic force microscopy (AFM), and scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS). The polymer films were used in metal-insulator-metal (MIM) capacitors as well as gate dielectric in In-Ga-Zn-O (IGZO) TFTs. The MIM capacitors showed a dielectric constant of 8.35 at 1kHz, a leakage current density below 1.07×10-7 A.cm-2 at 1MV.cm-1, and a breakdown field higher than 1.5MV.cm-1. The TFT had turn-on voltage (Von) of -1V, saturation mobility of (μSat) of 7.07 cm2·V-1·s-1 and on/off current ratio of 105, positioning them close to the IGZO TFTs using traditional dielectrics that require complex etching processes.Um polímero foto padronizável, como o fornecido pela Solvay, é um polímero dielétrico com proprie-dades físicas que fazem dele um excelente candidato para ser utilizado no fabrico de um transístor de filme fino (TFT), permitindo poupar tempo e reduzir a complexidade dos processos. Com o objetivo de demonstrar que este material consegue ser padronizado utilizando luz UV e revelando o padrão em acetona, foi feita uma otimização das condições não só da deposição deste filme, bem como do processo de cura e revelação do mesmo, de forma a tentar manter as suas propriedades dielétricas. Os filmes foram depositados por spincoa-ting, seguido de um baking a 90° C por 10 minutos e curados utilizando uma lâmpada com comprimento de onda de 365nm. Os filmes foram caracterizados através de medidas de perfilometria, transmitância, microsco-pia de força atómica e microscópio de varrimento eletrónico e espetroscopia de energia dispersiva de raio-x (SEM/EDS). Os filmes foram também depositados em estruturas metal isolante metal (MIM) e como dielétrico de porta em transístores de filme fino de In-Ga-Zn-O (IGZO) produzidos em duas arquiteturas diferentes. Os condensadores MIM exibiram uma constante dielétrica de 8.35 a 1kHz, uma densidade de corrente de fuga de cerca de 2.21x10-12 A.cm-2 a 1MV.cm-1 e um campo elétrico de rutura superior a 3 MV.cm-1. Os TFTs produ-zidos, exibiram uma tensão on (Von) de -1V, uma mobilidade de efeito de campo (μFE) de 7.07 cm2·V-1·s-1 e uma razão de corrente on/off de 105, colocando estes dispositivos perto de valores apresentados em TFTs de IGZO que usam dielétricos tradicionais e são produzidos por técnicas complexas de etching.Barquinha, PedroMarrani, AlessioRUNUlrich, Leonor Vera2022-09-15T12:11:57Z2022-022022-02-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/143747enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:22:26Zoai:run.unl.pt:10362/143747Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:51:07.116827Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Photopatternable gate insulator for oxide TFTs |
title |
Photopatternable gate insulator for oxide TFTs |
spellingShingle |
Photopatternable gate insulator for oxide TFTs Ulrich, Leonor Vera Photopatternable Dielectric IGZO TFT Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
title_short |
Photopatternable gate insulator for oxide TFTs |
title_full |
Photopatternable gate insulator for oxide TFTs |
title_fullStr |
Photopatternable gate insulator for oxide TFTs |
title_full_unstemmed |
Photopatternable gate insulator for oxide TFTs |
title_sort |
Photopatternable gate insulator for oxide TFTs |
author |
Ulrich, Leonor Vera |
author_facet |
Ulrich, Leonor Vera |
author_role |
author |
dc.contributor.none.fl_str_mv |
Barquinha, Pedro Marrani, Alessio RUN |
dc.contributor.author.fl_str_mv |
Ulrich, Leonor Vera |
dc.subject.por.fl_str_mv |
Photopatternable Dielectric IGZO TFT Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
topic |
Photopatternable Dielectric IGZO TFT Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
description |
A photopatternable and solution-processable dielectric polymer, as the one provided by Solvay for this work, has physical properties that make it a unique candidate for gate dielectric in thin-film transistors (TFT), allowing to save time and reduce the complexity of the processes involved. To demonstrate that this material can be patterned using Ultra-Violet (UV) light and the exposed pattern can be developed in acetone, an opti-mization of the processing conditions was made in terms of the deposition conditions, curing and development steps. The polymer films were deposited by spin coating, followed by a baking at 90°C for 10 minutes and cured using a lightbulb with 365nm wavelength. The films were then characterized by profilometry, transmit-tance, atomic force microscopy (AFM), and scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS). The polymer films were used in metal-insulator-metal (MIM) capacitors as well as gate dielectric in In-Ga-Zn-O (IGZO) TFTs. The MIM capacitors showed a dielectric constant of 8.35 at 1kHz, a leakage current density below 1.07×10-7 A.cm-2 at 1MV.cm-1, and a breakdown field higher than 1.5MV.cm-1. The TFT had turn-on voltage (Von) of -1V, saturation mobility of (μSat) of 7.07 cm2·V-1·s-1 and on/off current ratio of 105, positioning them close to the IGZO TFTs using traditional dielectrics that require complex etching processes. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-09-15T12:11:57Z 2022-02 2022-02-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/143747 |
url |
http://hdl.handle.net/10362/143747 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799138106195050496 |