Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/75233 |
Resumo: | The possibility to tune the elemental composition and structure of binary Me oxynitride-type compounds (Me1Me2ON) could lead to attractive properties for several applications. For this work, tantalum-titanium oxynitride (TaTiON) thin films were deposited by DC reactive magnetron co-sputtering, with a –50 V bias voltage applied to the substrate holder and a constant substrate temperature of 100 ◦C. To increase or to decrease in a controlled manner, the Ti and Ta content in the co-sputtered films, the Ti and Ta target currents were varied between 0.00 and 1.00 A, in 0.25 A steps, while keeping the sum of the currents applied to the two targets at 1.00 A. The reactive gases flow, consisting of a nitrogen and oxygen gas mixture with a constant N2/O2 ratio (85%/15%), was also kept constant. The single-metal oxynitrides (TaON and TiON) showed a low degree of crystallinity, while all the other co-sputtered films revealed themselves to be essentially amorphous. These two films also exhibited higher adhesion to the metallic substrate. The TaON film showed the highest hardness value (14.8 GPa) and the TiON film a much lower one (8.8 GPa), while the co-sputtered coatings exhibited intermediary values. One of the most interesting findings was the significant increase in the O content when the Ti concentration surpassed the Ta one. This significantly influenced the optical characteristic of the films, but also their electrical properties. The sheet resistivity of the co-sputtered films is strongly dependent on the O/(Ta + Ti) atomic ratio. |
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Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterizationTernary oxynitrideCo-sputteringHardnessAdhesionWearEngenharia e Tecnologia::Engenharia dos MateriaisScience & TechnologyThe possibility to tune the elemental composition and structure of binary Me oxynitride-type compounds (Me1Me2ON) could lead to attractive properties for several applications. For this work, tantalum-titanium oxynitride (TaTiON) thin films were deposited by DC reactive magnetron co-sputtering, with a –50 V bias voltage applied to the substrate holder and a constant substrate temperature of 100 ◦C. To increase or to decrease in a controlled manner, the Ti and Ta content in the co-sputtered films, the Ti and Ta target currents were varied between 0.00 and 1.00 A, in 0.25 A steps, while keeping the sum of the currents applied to the two targets at 1.00 A. The reactive gases flow, consisting of a nitrogen and oxygen gas mixture with a constant N2/O2 ratio (85%/15%), was also kept constant. The single-metal oxynitrides (TaON and TiON) showed a low degree of crystallinity, while all the other co-sputtered films revealed themselves to be essentially amorphous. These two films also exhibited higher adhesion to the metallic substrate. The TaON film showed the highest hardness value (14.8 GPa) and the TiON film a much lower one (8.8 GPa), while the co-sputtered coatings exhibited intermediary values. One of the most interesting findings was the significant increase in the O content when the Ti concentration surpassed the Ta one. This significantly influenced the optical characteristic of the films, but also their electrical properties. The sheet resistivity of the co-sputtered films is strongly dependent on the O/(Ta + Ti) atomic ratio.This research was funded by a grant of the Romanian Ministry of Education and Research, CNCS-UEFISCDI, project number PN-III-P1-1.1-TE-2019-1209, within PNCDI III. This work was also supported by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UIDB/04650/2020. V.C. acknowledges the Romanian Ministry of Research, NUCLEU Program LAPLAS VI (contract No. 16N/2019) and ELI-RO_2020_12.MDPIUniversidade do MinhoCristea, DanielVelicu, Ioana-LauraCunha, L.Barradas, Nuno P.Alves, EduardoCraciun, Valentin20222022-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/75233engCristea, D.; Velicu, I.-L.; Cunha, L.; Barradas, N.; Alves, E.; Craciun, V. Tantalum-Titanium Oxynitride Thin Films Deposited by DC Reactive Magnetron Co-Sputtering: Mechanical, Optical, and Electrical Characterization. Coatings 2022, 12, 36. https://doi.org/10.3390/coatings120100362079-641210.3390/coatings1201003636https://www.mdpi.com/2079-6412/12/1/36info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:52:48Zoai:repositorium.sdum.uminho.pt:1822/75233Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:52:01.255503Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
title |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
spellingShingle |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization Cristea, Daniel Ternary oxynitride Co-sputtering Hardness Adhesion Wear Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology |
title_short |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
title_full |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
title_fullStr |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
title_full_unstemmed |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
title_sort |
Tantalum-titanium oxynitride thin films deposited by DC reactive magnetronic co-sputtering: mechanical, optical, and electrical characterization |
author |
Cristea, Daniel |
author_facet |
Cristea, Daniel Velicu, Ioana-Laura Cunha, L. Barradas, Nuno P. Alves, Eduardo Craciun, Valentin |
author_role |
author |
author2 |
Velicu, Ioana-Laura Cunha, L. Barradas, Nuno P. Alves, Eduardo Craciun, Valentin |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Cristea, Daniel Velicu, Ioana-Laura Cunha, L. Barradas, Nuno P. Alves, Eduardo Craciun, Valentin |
dc.subject.por.fl_str_mv |
Ternary oxynitride Co-sputtering Hardness Adhesion Wear Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology |
topic |
Ternary oxynitride Co-sputtering Hardness Adhesion Wear Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology |
description |
The possibility to tune the elemental composition and structure of binary Me oxynitride-type compounds (Me1Me2ON) could lead to attractive properties for several applications. For this work, tantalum-titanium oxynitride (TaTiON) thin films were deposited by DC reactive magnetron co-sputtering, with a –50 V bias voltage applied to the substrate holder and a constant substrate temperature of 100 ◦C. To increase or to decrease in a controlled manner, the Ti and Ta content in the co-sputtered films, the Ti and Ta target currents were varied between 0.00 and 1.00 A, in 0.25 A steps, while keeping the sum of the currents applied to the two targets at 1.00 A. The reactive gases flow, consisting of a nitrogen and oxygen gas mixture with a constant N2/O2 ratio (85%/15%), was also kept constant. The single-metal oxynitrides (TaON and TiON) showed a low degree of crystallinity, while all the other co-sputtered films revealed themselves to be essentially amorphous. These two films also exhibited higher adhesion to the metallic substrate. The TaON film showed the highest hardness value (14.8 GPa) and the TiON film a much lower one (8.8 GPa), while the co-sputtered coatings exhibited intermediary values. One of the most interesting findings was the significant increase in the O content when the Ti concentration surpassed the Ta one. This significantly influenced the optical characteristic of the films, but also their electrical properties. The sheet resistivity of the co-sputtered films is strongly dependent on the O/(Ta + Ti) atomic ratio. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022 2022-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/75233 |
url |
https://hdl.handle.net/1822/75233 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Cristea, D.; Velicu, I.-L.; Cunha, L.; Barradas, N.; Alves, E.; Craciun, V. Tantalum-Titanium Oxynitride Thin Films Deposited by DC Reactive Magnetron Co-Sputtering: Mechanical, Optical, and Electrical Characterization. Coatings 2022, 12, 36. https://doi.org/10.3390/coatings12010036 2079-6412 10.3390/coatings12010036 36 https://www.mdpi.com/2079-6412/12/1/36 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
MDPI |
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MDPI |
dc.source.none.fl_str_mv |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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