Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering
Autor(a) principal: | |
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Data de Publicação: | 2012 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/21095 |
Resumo: | Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlNx and AlOy systems, prepared in similar conditions. |
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Electrical properties of AlNxOy thin films prepared by reactive magnetron sputteringAluminum oxynitrideMagnetron sputteringElectrical propertiesScience & TechnologyDirect current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlNx and AlOy systems, prepared in similar conditions.This research is sponsored by FEDER funds through the program COMPETE-Programa Operacional Factores de Competitividade, by the national funds through FCT-Fundação para a Ciência e a Tecnologia, under the project PTDC/CTM-NAN/112574/2009 and Programa Pessoa 2010/2011 Cooperação Portugal/França, Proc.º 441.00, Project“COLOURCLUSTER”. J. Borges also acknowledges FCT financial support under PhD grant no. SFRH/BD/47118/2008.ElsevierUniversidade do MinhoBorges, Joel Nuno PintoMartin, N.Barradas, Nuno P.Alves, E.Eyidi, D.Beaufort, Marie FranceRiviere, J. P.Vaz, F.Marques, L.2012-062012-06-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/21095eng0040-609010.1016/j.tsf.2012.06.062info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T11:55:17Zoai:repositorium.sdum.uminho.pt:1822/21095Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T18:44:49.646917Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
title |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
spellingShingle |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering Borges, Joel Nuno Pinto Aluminum oxynitride Magnetron sputtering Electrical properties Science & Technology |
title_short |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
title_full |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
title_fullStr |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
title_full_unstemmed |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
title_sort |
Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering |
author |
Borges, Joel Nuno Pinto |
author_facet |
Borges, Joel Nuno Pinto Martin, N. Barradas, Nuno P. Alves, E. Eyidi, D. Beaufort, Marie France Riviere, J. P. Vaz, F. Marques, L. |
author_role |
author |
author2 |
Martin, N. Barradas, Nuno P. Alves, E. Eyidi, D. Beaufort, Marie France Riviere, J. P. Vaz, F. Marques, L. |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Borges, Joel Nuno Pinto Martin, N. Barradas, Nuno P. Alves, E. Eyidi, D. Beaufort, Marie France Riviere, J. P. Vaz, F. Marques, L. |
dc.subject.por.fl_str_mv |
Aluminum oxynitride Magnetron sputtering Electrical properties Science & Technology |
topic |
Aluminum oxynitride Magnetron sputtering Electrical properties Science & Technology |
description |
Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray 2 diffraction and transmission electron microscopy suggested the formation of an aluminumbased polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlNx and AlOy systems, prepared in similar conditions. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-06 2012-06-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/21095 |
url |
http://hdl.handle.net/1822/21095 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0040-6090 10.1016/j.tsf.2012.06.062 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799132198664667136 |