Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition
Autor(a) principal: | |
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Data de Publicação: | 2023 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/40274 |
Resumo: | The present investigation was carried out to develop dense ceramics of silicon nitride-titanium nitride (Si3N4–TiN) with low electrical resistivity and excellent mechanical properties. The objective was to employ these ceramics as substrates of conductive diamond electrodes produced by chemical vapor deposition (CVD) for electrochemical applications. TiN powder was added to a Si3N4 matrix powder composition at varying volume fractions (21–30%). Disc-shaped samples were fabricated by mixing and pressing the powders, followed by pressureless sintering. The crystalline phase composition and microstructure were analyzed using X-ray diffraction and scanning electron microscopy, while the electrical resistivity was measured with a four-point probe configuration. The composites transitioned from insulating to conductive behavior between 23 and 27%vol TiN. The developed compositions displayed superior hardness, fracture toughness, elastic modulus, and thermal conductivity compared to the Si3N4 matrix. Notably, the composition containing 30%vol TiN displayed noteworthy properties, including a hardness value of 16.1 GPa, fracture toughness of 7.0 MPa m1/2, and electrical resistivity of 8.9 × 10−1 Ω cm. Finally, the proof-of-concept experiment demonstrated the potential of Si3N4–TiN composites as robust and electroconductive substrates for depositing conductive diamond electrodes. This was achieved by successfully depositing conductive diamond films on Si3N4–TiN substrates using the Hot Filament Chemical Vapor Deposition (HFCVD) technique. |
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Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode depositionSi3N4NitridesSubstratesElectrical conductivityThe present investigation was carried out to develop dense ceramics of silicon nitride-titanium nitride (Si3N4–TiN) with low electrical resistivity and excellent mechanical properties. The objective was to employ these ceramics as substrates of conductive diamond electrodes produced by chemical vapor deposition (CVD) for electrochemical applications. TiN powder was added to a Si3N4 matrix powder composition at varying volume fractions (21–30%). Disc-shaped samples were fabricated by mixing and pressing the powders, followed by pressureless sintering. The crystalline phase composition and microstructure were analyzed using X-ray diffraction and scanning electron microscopy, while the electrical resistivity was measured with a four-point probe configuration. The composites transitioned from insulating to conductive behavior between 23 and 27%vol TiN. The developed compositions displayed superior hardness, fracture toughness, elastic modulus, and thermal conductivity compared to the Si3N4 matrix. Notably, the composition containing 30%vol TiN displayed noteworthy properties, including a hardness value of 16.1 GPa, fracture toughness of 7.0 MPa m1/2, and electrical resistivity of 8.9 × 10−1 Ω cm. Finally, the proof-of-concept experiment demonstrated the potential of Si3N4–TiN composites as robust and electroconductive substrates for depositing conductive diamond electrodes. This was achieved by successfully depositing conductive diamond films on Si3N4–TiN substrates using the Hot Filament Chemical Vapor Deposition (HFCVD) technique.Elsevier2024-01-23T11:47:02Z2023-11-15T00:00:00Z2023-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/40274eng0272-884210.1016/j.ceramint.2023.08.327Brosler, PriscillaSilva, Rui F.Tedim, JoãoOliveira, Filipe J.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T12:18:59Zoai:ria.ua.pt:10773/40274Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:10:22.581077Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
title |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
spellingShingle |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition Brosler, Priscilla Si3N4 Nitrides Substrates Electrical conductivity |
title_short |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
title_full |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
title_fullStr |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
title_full_unstemmed |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
title_sort |
Electroconductive silicon nitride-titanium nitride ceramic substrates for CVD diamond electrode deposition |
author |
Brosler, Priscilla |
author_facet |
Brosler, Priscilla Silva, Rui F. Tedim, João Oliveira, Filipe J. |
author_role |
author |
author2 |
Silva, Rui F. Tedim, João Oliveira, Filipe J. |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Brosler, Priscilla Silva, Rui F. Tedim, João Oliveira, Filipe J. |
dc.subject.por.fl_str_mv |
Si3N4 Nitrides Substrates Electrical conductivity |
topic |
Si3N4 Nitrides Substrates Electrical conductivity |
description |
The present investigation was carried out to develop dense ceramics of silicon nitride-titanium nitride (Si3N4–TiN) with low electrical resistivity and excellent mechanical properties. The objective was to employ these ceramics as substrates of conductive diamond electrodes produced by chemical vapor deposition (CVD) for electrochemical applications. TiN powder was added to a Si3N4 matrix powder composition at varying volume fractions (21–30%). Disc-shaped samples were fabricated by mixing and pressing the powders, followed by pressureless sintering. The crystalline phase composition and microstructure were analyzed using X-ray diffraction and scanning electron microscopy, while the electrical resistivity was measured with a four-point probe configuration. The composites transitioned from insulating to conductive behavior between 23 and 27%vol TiN. The developed compositions displayed superior hardness, fracture toughness, elastic modulus, and thermal conductivity compared to the Si3N4 matrix. Notably, the composition containing 30%vol TiN displayed noteworthy properties, including a hardness value of 16.1 GPa, fracture toughness of 7.0 MPa m1/2, and electrical resistivity of 8.9 × 10−1 Ω cm. Finally, the proof-of-concept experiment demonstrated the potential of Si3N4–TiN composites as robust and electroconductive substrates for depositing conductive diamond electrodes. This was achieved by successfully depositing conductive diamond films on Si3N4–TiN substrates using the Hot Filament Chemical Vapor Deposition (HFCVD) technique. |
publishDate |
2023 |
dc.date.none.fl_str_mv |
2023-11-15T00:00:00Z 2023-11-15 2024-01-23T11:47:02Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/40274 |
url |
http://hdl.handle.net/10773/40274 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0272-8842 10.1016/j.ceramint.2023.08.327 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137753777045504 |