Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC

• Autor(a) principal: Alpuim, P.
• Data de Publicação: 2009
• Outros Autores: Gonçalves, L. M., Marins, Emílio Sérgio, Viseu, T. M. R., Ferdov, S., Bourée, J. E.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/11748
• topic: Hot-wire CVD; Silicon nitride; Dielectric; Low-temperature deposition; Electronic transport; Science & Technology

Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1.