Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/11748 |
Resumo: | Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1. |
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Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºCHot-wire CVDSilicon nitrideDielectricLow-temperature depositionElectronic transportScience & TechnologySilicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1.Fundação para a Ciência e Tecnologia (FCT) - FCT/CNRS programa com o contracto no. 20798, bolsa de investigaçao e projecto PTDC-CTM-66558-2006Elsevier 1Universidade do MinhoAlpuim, P.Gonçalves, L. M.Marins, Emílio SérgioViseu, T. M. R.Ferdov, S.Bourée, J. E.2009-042009-04-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/11748eng"Thin Solid Films." ISSN 0040-6090. 517:12 (Abr. 2009) 3503-3506.0040-609010.1016/j.tsf.2009.01.077http://www.sciencedirect.com/info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-07-13T02:13:29Zoai:repositorium.sdum.uminho.pt:1822/11748Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-07-13T02:13:29Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
title |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
spellingShingle |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC Alpuim, P. Hot-wire CVD Silicon nitride Dielectric Low-temperature deposition Electronic transport Science & Technology |
title_short |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
title_full |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
title_fullStr |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
title_full_unstemmed |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
title_sort |
Deposition of silicon nitride thin films by hot-wire CVD at 100ºC and 250ºC |
author |
Alpuim, P. |
author_facet |
Alpuim, P. Gonçalves, L. M. Marins, Emílio Sérgio Viseu, T. M. R. Ferdov, S. Bourée, J. E. |
author_role |
author |
author2 |
Gonçalves, L. M. Marins, Emílio Sérgio Viseu, T. M. R. Ferdov, S. Bourée, J. E. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Alpuim, P. Gonçalves, L. M. Marins, Emílio Sérgio Viseu, T. M. R. Ferdov, S. Bourée, J. E. |
dc.subject.por.fl_str_mv |
Hot-wire CVD Silicon nitride Dielectric Low-temperature deposition Electronic transport Science & Technology |
topic |
Hot-wire CVD Silicon nitride Dielectric Low-temperature deposition Electronic transport Science & Technology |
description |
Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 Ǻ/s) and at low substrate temperature. Films were deposited using NH3/SiH4 flow rate ratios between 1 and 70 and substrate temperatures of 100º C and 250ºC. For NH3/SiH4 ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56 - 2.74 g/cm3) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 Ǻ/s and <0.5 Ǻ/s were obtained for films deposited at 100ºC and 250ºC, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10-14 Ω-1cm-1 and breakdown fields >10 MV cm−1. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-04 2009-04-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/11748 |
url |
https://hdl.handle.net/1822/11748 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
"Thin Solid Films." ISSN 0040-6090. 517:12 (Abr. 2009) 3503-3506. 0040-6090 10.1016/j.tsf.2009.01.077 http://www.sciencedirect.com/ |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier 1 |
publisher.none.fl_str_mv |
Elsevier 1 |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
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1817545360831152128 |