Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
Autor(a) principal: | |
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Data de Publicação: | 2012 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://repositorio.inesctec.pt/handle/123456789/2192 |
Resumo: | Indium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n- |
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Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputteringIndium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n-2017-11-16T13:19:55Z2012-01-01T00:00:00Z2012info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://repositorio.inesctec.pt/handle/123456789/2192engJavier CruzGali Chandrainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-05-15T10:20:23Zoai:repositorio.inesctec.pt:123456789/2192Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:53:03.280059Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
title |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
spellingShingle |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering Javier Cruz |
title_short |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
title_full |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
title_fullStr |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
title_full_unstemmed |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
title_sort |
Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering |
author |
Javier Cruz |
author_facet |
Javier Cruz Gali Chandra |
author_role |
author |
author2 |
Gali Chandra |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Javier Cruz Gali Chandra |
description |
Indium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n- |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-01-01T00:00:00Z 2012 2017-11-16T13:19:55Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://repositorio.inesctec.pt/handle/123456789/2192 |
url |
http://repositorio.inesctec.pt/handle/123456789/2192 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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