Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering

Detalhes bibliográficos
Autor(a) principal: Javier Cruz
Data de Publicação: 2012
Outros Autores: Gali Chandra
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://repositorio.inesctec.pt/handle/123456789/2192
Resumo: Indium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n-
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spelling Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputteringIndium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n-2017-11-16T13:19:55Z2012-01-01T00:00:00Z2012info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://repositorio.inesctec.pt/handle/123456789/2192engJavier CruzGali Chandrainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-05-15T10:20:23Zoai:repositorio.inesctec.pt:123456789/2192Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:53:03.280059Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
title Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
spellingShingle Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
Javier Cruz
title_short Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
title_full Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
title_fullStr Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
title_full_unstemmed Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
title_sort Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
author Javier Cruz
author_facet Javier Cruz
Gali Chandra
author_role author
author2 Gali Chandra
author2_role author
dc.contributor.author.fl_str_mv Javier Cruz
Gali Chandra
description Indium Phosphide films were prepared onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348 - 573 K), by keeping argon pressure (0.4 Pa) and RF power (150 W) constant. Substrate temperature (TS) found to have significant influence on the structure, morphology, electrical and optical properties of InP films. The composition of the films was carried out by using energy dispersive X-ray analysis and X-ray photoelectron spectroscopy. X-ray diffraction and electron backscattered diffraction are used to examine the structure of the films. The surface morphology of InP films were examined using scanning electron microscope. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111) was observed at a substrate temperature of 448 K, by maintaining argon pressure (0.4 Pa) and RF power (150 W) constant. Conical grain growth was observed in the films. Hall measurements reveal n-
publishDate 2012
dc.date.none.fl_str_mv 2012-01-01T00:00:00Z
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