Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

Detalhes bibliográficos
Autor(a) principal: Jiang, Guixia
Data de Publicação: 2016
Outros Autores: Liu, Ao, Liu, Guoxia, Zhu, Chundan, Meng, You, Shin, Byoungchul, Fortunato, Elvira, Martins, Rodrigo, Shan, Fukai
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://doi.org/10.1063/1.4966897
Resumo: This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135).
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spelling Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistorsGATE DIELECTRICSTEMPERATURE FABRICATIONPERFORMANCEMOBILITYTECHNOLOGYTFTPhysics and Astronomy (miscellaneous)This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135).Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNJiang, GuixiaLiu, AoLiu, GuoxiaZhu, ChundanMeng, YouShin, ByoungchulFortunato, ElviraMartins, RodrigoShan, Fukai2018-05-09T22:10:59Z2016-10-312016-10-31T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1063/1.4966897eng0003-6951PURE: 2599040http://www.scopus.com/inward/record.url?scp=84994337318&partnerID=8YFLogxKhttps://doi.org/10.1063/1.4966897info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:19:41Zoai:run.unl.pt:10362/36328Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:30:26.396212Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
title Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
spellingShingle Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
Jiang, Guixia
GATE DIELECTRICS
TEMPERATURE FABRICATION
PERFORMANCE
MOBILITY
TECHNOLOGY
TFT
Physics and Astronomy (miscellaneous)
title_short Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
title_full Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
title_fullStr Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
title_full_unstemmed Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
title_sort Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
author Jiang, Guixia
author_facet Jiang, Guixia
Liu, Ao
Liu, Guoxia
Zhu, Chundan
Meng, You
Shin, Byoungchul
Fortunato, Elvira
Martins, Rodrigo
Shan, Fukai
author_role author
author2 Liu, Ao
Liu, Guoxia
Zhu, Chundan
Meng, You
Shin, Byoungchul
Fortunato, Elvira
Martins, Rodrigo
Shan, Fukai
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Jiang, Guixia
Liu, Ao
Liu, Guoxia
Zhu, Chundan
Meng, You
Shin, Byoungchul
Fortunato, Elvira
Martins, Rodrigo
Shan, Fukai
dc.subject.por.fl_str_mv GATE DIELECTRICS
TEMPERATURE FABRICATION
PERFORMANCE
MOBILITY
TECHNOLOGY
TFT
Physics and Astronomy (miscellaneous)
topic GATE DIELECTRICS
TEMPERATURE FABRICATION
PERFORMANCE
MOBILITY
TECHNOLOGY
TFT
Physics and Astronomy (miscellaneous)
description This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135).
publishDate 2016
dc.date.none.fl_str_mv 2016-10-31
2016-10-31T00:00:00Z
2018-05-09T22:10:59Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1063/1.4966897
url https://doi.org/10.1063/1.4966897
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
PURE: 2599040
http://www.scopus.com/inward/record.url?scp=84994337318&partnerID=8YFLogxK
https://doi.org/10.1063/1.4966897
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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