Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://doi.org/10.1063/1.4966897 |
Resumo: | This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135). |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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7160 |
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Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistorsGATE DIELECTRICSTEMPERATURE FABRICATIONPERFORMANCEMOBILITYTECHNOLOGYTFTPhysics and Astronomy (miscellaneous)This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135).Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNJiang, GuixiaLiu, AoLiu, GuoxiaZhu, ChundanMeng, YouShin, ByoungchulFortunato, ElviraMartins, RodrigoShan, Fukai2018-05-09T22:10:59Z2016-10-312016-10-31T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1063/1.4966897eng0003-6951PURE: 2599040http://www.scopus.com/inward/record.url?scp=84994337318&partnerID=8YFLogxKhttps://doi.org/10.1063/1.4966897info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:19:41Zoai:run.unl.pt:10362/36328Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:30:26.396212Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
title |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
spellingShingle |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors Jiang, Guixia GATE DIELECTRICS TEMPERATURE FABRICATION PERFORMANCE MOBILITY TECHNOLOGY TFT Physics and Astronomy (miscellaneous) |
title_short |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
title_full |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
title_fullStr |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
title_full_unstemmed |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
title_sort |
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors |
author |
Jiang, Guixia |
author_facet |
Jiang, Guixia Liu, Ao Liu, Guoxia Zhu, Chundan Meng, You Shin, Byoungchul Fortunato, Elvira Martins, Rodrigo Shan, Fukai |
author_role |
author |
author2 |
Liu, Ao Liu, Guoxia Zhu, Chundan Meng, You Shin, Byoungchul Fortunato, Elvira Martins, Rodrigo Shan, Fukai |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N) DCM - Departamento de Ciência dos Materiais UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias RUN |
dc.contributor.author.fl_str_mv |
Jiang, Guixia Liu, Ao Liu, Guoxia Zhu, Chundan Meng, You Shin, Byoungchul Fortunato, Elvira Martins, Rodrigo Shan, Fukai |
dc.subject.por.fl_str_mv |
GATE DIELECTRICS TEMPERATURE FABRICATION PERFORMANCE MOBILITY TECHNOLOGY TFT Physics and Astronomy (miscellaneous) |
topic |
GATE DIELECTRICS TEMPERATURE FABRICATION PERFORMANCE MOBILITY TECHNOLOGY TFT Physics and Astronomy (miscellaneous) |
description |
This study was supported by the Natural Science Foundation of China (Grant Nos. 51472130, 51672142, and 51572135). |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-10-31 2016-10-31T00:00:00Z 2018-05-09T22:10:59Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://doi.org/10.1063/1.4966897 |
url |
https://doi.org/10.1063/1.4966897 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0003-6951 PURE: 2599040 http://www.scopus.com/inward/record.url?scp=84994337318&partnerID=8YFLogxK https://doi.org/10.1063/1.4966897 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137928582004736 |