Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device

Detalhes bibliográficos
Autor(a) principal: Deuermeier, Jonas
Data de Publicação: 2019
Outros Autores: Kiazadeh, Asal, Klein, Andreas, Martins, Rodrigo, Fortunato, Elvira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/72025
Resumo: This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).
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spelling Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Deviceresistive switching memoriesmulti-level cellcopper oxidegrain boundariesaluminum oxideThis research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasDCM - Departamento de Ciência dos MateriaisRUNDeuermeier, JonasKiazadeh, AsalKlein, AndreasMartins, RodrigoFortunato, Elvira2019-06-07T22:09:45Z2019-02-192019-02-19T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/72025eng2079-4991PURE: 13512022https://doi.org/10.3390/nano9020289info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:33:46Zoai:run.unl.pt:10362/72025Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:35:14.826457Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
title Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
spellingShingle Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Deuermeier, Jonas
resistive switching memories
multi-level cell
copper oxide
grain boundaries
aluminum oxide
title_short Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
title_full Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
title_fullStr Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
title_full_unstemmed Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
title_sort Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
author Deuermeier, Jonas
author_facet Deuermeier, Jonas
Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
dc.contributor.none.fl_str_mv CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv Deuermeier, Jonas
Kiazadeh, Asal
Klein, Andreas
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv resistive switching memories
multi-level cell
copper oxide
grain boundaries
aluminum oxide
topic resistive switching memories
multi-level cell
copper oxide
grain boundaries
aluminum oxide
description This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under project number POCI-01-0145-FEDER-007688, Reference UID/CTM/50025. J.D. acknowledges funding received from the European Union's Horizon 2020 Research and Innovation Programme through the project HERACLES (Project No. 700395) and the German Science Foundation through the collaborative research center SFB 595 (Electrical Fatigue of Functional Materials). A. Kiazadeh acknowledges FCT for the postdoctoral grant SFRH/BPD/99136/2013 and for funding received through the project NeurOxide (PTDC/NAN-MAT/30812/2017).
publishDate 2019
dc.date.none.fl_str_mv 2019-06-07T22:09:45Z
2019-02-19
2019-02-19T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/72025
url http://hdl.handle.net/10362/72025
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2079-4991
PURE: 13512022
https://doi.org/10.3390/nano9020289
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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